D.L. Blackburn

1.5k total citations
35 papers, 1.1k citations indexed

About

D.L. Blackburn is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D.L. Blackburn has authored 35 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D.L. Blackburn's work include Silicon Carbide Semiconductor Technologies (15 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor materials and devices (7 papers). D.L. Blackburn is often cited by papers focused on Silicon Carbide Semiconductor Technologies (15 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor materials and devices (7 papers). D.L. Blackburn collaborates with scholars based in United States, Italy and Canada. D.L. Blackburn's co-authors include Allen R. Hefner, D.W. Berning, Frank F. Oettinger, K.F. Galloway, H. Morkoç̌, Guangjun Gao, Yogendra Joshi, Michael Gaitan, Jon Geist and M. Parameswaran and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Power Electronics.

In The Last Decade

D.L. Blackburn

33 papers receiving 1.0k citations

Peers

D.L. Blackburn
V. Székely Hungary
D.W. Berning United States
Paul Fulmek Austria
Paolo Bagnoli Italy
M. Vellvehı́ Spain
Michele Riccio Italy
Mauro Ciappa Switzerland
W.N. Carr United States
Hervé Morel France
Heinrich Schlangenotto Germany
V. Székely Hungary
D.L. Blackburn
Citations per year, relative to D.L. Blackburn D.L. Blackburn (= 1×) peers V. Székely

Countries citing papers authored by D.L. Blackburn

Since Specialization
Citations

This map shows the geographic impact of D.L. Blackburn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D.L. Blackburn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D.L. Blackburn more than expected).

Fields of papers citing papers by D.L. Blackburn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D.L. Blackburn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D.L. Blackburn. The network helps show where D.L. Blackburn may publish in the future.

Co-authorship network of co-authors of D.L. Blackburn

This figure shows the co-authorship network connecting the top 25 collaborators of D.L. Blackburn. A scholar is included among the top collaborators of D.L. Blackburn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D.L. Blackburn. D.L. Blackburn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Blackburn, D.L.. (2004). Temperature measurements of semiconductor devices - a review. 70–80. 264 indexed citations
2.
Blackburn, D.L.. (2003). Semiconductor devices and circuits: smaller, faster, denser and what it all means. 73–73. 1 indexed citations
3.
Hefner, Allen R. & D.L. Blackburn. (2003). Simulating the dynamic electro-thermal behavior of power electronic circuits and systems. 143–151. 10 indexed citations
4.
Busatto, G., D.L. Blackburn, & D.W. Berning. (2002). Experimental study of reverse-bias failure mechanisms in bipolar mode JFET (BMFET). 482–488. 2 indexed citations
5.
6.
Hefner, Allen R. & D.L. Blackburn. (2002). Thermal component models for electro-thermal network simulations. 88–98. 22 indexed citations
7.
Hefner, Allen R., et al.. (2002). A high-speed thermal imaging system for semiconductor device analysis. 43–49. 15 indexed citations
8.
Fitz, M.P., et al.. (2002). ITS wireless narrowband land mobile data communications. 2. 909–913. 2 indexed citations
9.
Hefner, Allen R. & D.L. Blackburn. (1994). Thermal component models for electrothermal network simulation. IEEE Transactions on Components Packaging and Manufacturing Technology Part A. 17(3). 413–424. 108 indexed citations
10.
Hefner, Allen R. & D.L. Blackburn. (1993). Simulating the dynamic electrothermal behavior of power electronic circuits and systems. IEEE Transactions on Power Electronics. 8(4). 376–385. 108 indexed citations
11.
Gao, Guangjun, et al.. (1991). Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors. IEEE Transactions on Electron Devices. 38(2). 185–196. 79 indexed citations
12.
Parameswaran, M., A.M. Robinson, D.L. Blackburn, Michael Gaitan, & Jon Geist. (1991). Micromachined thermal radiation emitter from a commercial CMOS process. IEEE Electron Device Letters. 12(2). 57–59. 78 indexed citations
13.
Marks, Roger B., et al.. (1990). Microwave monolithic integrated circuit-related metrology at the National Institute of Standards and Technology. IEEE Transactions on Instrumentation and Measurement. 39(6). 958–961. 8 indexed citations
14.
Blackburn, D.L., J.M. Benedetto, & K.F. Galloway. (1983). The Effect of Ionizing Radiation on the Breakdown Voltage of Power MOSFETS. IEEE Transactions on Nuclear Science. 30(6). 4116–4121. 27 indexed citations
15.
Blackburn, D.L., D.W. Berning, J.M. Benedetto, & K.F. Galloway. (1982). Ionizing Radiation Effects on Power MOSFETS during High Speed Switching. IEEE Transactions on Nuclear Science. 29(6). 1555–1558. 24 indexed citations
16.
Blackburn, D.L., et al.. (1981). VDMOS Power Transistor Drain-Source Resistance Radiation Dependence. IEEE Transactions on Nuclear Science. 28(6). 4354–4359. 19 indexed citations
17.
Blackburn, D.L. & D.W. Berning. (1980). An experimental study of reverse-bias second breakdown. 297–301. 21 indexed citations
18.
Blackburn, D.L.. (1978). Photovoltaic technique for measuring resistivity variations of high resistivity silicon slices. Journal of Research of the National Bureau of Standards. 83(3). 265–265. 1 indexed citations
19.
20.
Blackburn, D.L., et al.. (1976). Measurements of power transistor thermal instabilities, stable hot-spots, and second-breakdown. 151–154. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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