Angada B. Sachid

4.6k total citations · 2 hit papers
58 papers, 3.8k citations indexed

About

Angada B. Sachid is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Angada B. Sachid has authored 58 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 4 papers in Biomedical Engineering. Recurrent topics in Angada B. Sachid's work include Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Ferroelectric and Negative Capacitance Devices (23 papers). Angada B. Sachid is often cited by papers focused on Semiconductor materials and devices (44 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Ferroelectric and Negative Capacitance Devices (23 papers). Angada B. Sachid collaborates with scholars based in United States, India and Taiwan. Angada B. Sachid's co-authors include Chenming Hu, Ali Javey, Sujay B. Desai, Mahmut Tosun, Mark Hettick, Surabhi R. Madhvapathy, Gregory Pitner, H.‐S. Philip Wong, Jeffrey Bokor and Moon J. Kim and has published in prestigious journals such as Science, Advanced Materials and ACS Nano.

In The Last Decade

Angada B. Sachid

57 papers receiving 3.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

MoS₂transistors with 1-nanometer gate lengths

2016 1.2k citations Sujay B. Desai, Surabhi R. Madhvapathy et al. Science profile →
Field-Effect Transistors Built from All Two-Dimensional Material Components

2014 577 citations Mahmut Tosun, Jeong Seuk Kang et al. profile →

Peers

Countries citing papers authored by Angada B. Sachid

Since Specialization

Citations

This map shows the geographic impact of Angada B. Sachid's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Angada B. Sachid with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Angada B. Sachid more than expected).

Fields of papers citing papers by Angada B. Sachid

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Angada B. Sachid. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Angada B. Sachid. The network helps show where Angada B. Sachid may publish in the future.

Co-authorship network of co-authors of Angada B. Sachid

This figure shows the co-authorship network connecting the top 25 collaborators of Angada B. Sachid. A scholar is included among the top collaborators of Angada B. Sachid based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Angada B. Sachid. Angada B. Sachid is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs 2018 ·IEEE Transactions on Electron Devices ·Yen-Kai Lin, Pragya Kushwaha, Juan Pablo Duarte, H. L. Chang, Harshit Agarwal, Sourabh Khandelwal, Angada B. Sachid, (unknown), Josef Watts, Yogesh Singh Chauhan, Sayeef Salahuddin, Chenming Hu	3
2	Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor 2018 ·IEEE Transactions on Electron Devices ·Ming-Yen Kao, Angada B. Sachid, Yen-Kai Lin, Yu-Hung Liao, Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, H. L. Chang, Sayeef Salahuddin, Chenming Hu	30
3	Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance 2018 ·IEEE Transactions on Electron Devices ·Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, Yen-Kai Lin, Angada B. Sachid, H. L. Chang, Sayeef Salahuddin, Chenming Hu	25
4	Compact Modeling Source-to-Drain Tunneling in Sub-10-nm GAA FinFET With Industry Standard Model 2017 ·IEEE Transactions on Electron Devices ·Yen-Kai Lin, Juan Pablo Duarte, Pragya Kushwaha, Harshit Agarwal, H. L. Chang, Angada B. Sachid, Sayeef Salahuddin, Chenming Hu	16
5	High-gain monolithic 3D CMOS inverter using layered semiconductors 2017 ·Applied Physics Letters ·Angada B. Sachid, Sujay B. Desai, Ali Javey, Chenming Hu	12
6	Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors 2017 ·IEEE Electron Device Letters ·Daewoong Kwon, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Hong Zhou, Angada B. Sachid, Roberto dos Reis, Chenming Hu, Sayeef Salahuddin	124
7	Monolithic 3D CMOS Using Layered Semiconductors 2016 ·Advanced Materials ·Angada B. Sachid, Mahmut Tosun, Sujay B. Desai, (unknown), Der‐Hsien Lien, Surabhi R. Madhvapathy, Yuze Chen, Mark Hettick, Jeong Seuk Kang, Yuping Zeng, Jr‐Hau He, Edward Yi Chang, Yu‐Lun Chueh, Ali Javey, Chenming Hu	133
8	MoS₂transistors with 1-nanometer gate lengths breakdown → 2016 ·Science ·Sujay B. Desai, Surabhi R. Madhvapathy, Angada B. Sachid, Juan Pablo Llinas, Qingxiao Wang, Geun Ho Ahn, Gregory Pitner, Moon J. Kim, Jeffrey Bokor, Chenming Hu, H.‐S. Philip Wong, Ali Javey	1200
9	Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support 2015 ·IEEE Transactions on Nanotechnology ·Yuping Zeng, Chien-I Kuo, (unknown), (unknown), Angada B. Sachid, Rehan Kapadia, (unknown), Edward Yi Chang, Chenming Hu, Ali Javey	18
10	Flicker noise in advanced CMOS technology: Effects of halo implant 2013 ·Navid Paydavosi, Sriramkumar Venugopalan, Angada B. Sachid, Ali M. Niknejad, Chenming Hu, (unknown), Samuel P. Martin, Xin Zhang	8
11	Unified FinFET compact model: Modelling Trapezoidal Triple-Gate FinFETs 2013 ·Juan Pablo Duarte, Navid Paydavosi, Sriramkumar Venugopalan, Angada B. Sachid, Chenming Hu	28
12	Toward 44% switching energy reduction for FinFETs with vacuum gate spacer 2012 ·(unknown), Angada B. Sachid, (unknown), Chenming Hu	2
13	BSIM-IMG: A Turnkey compact model for fully depleted technologies 2012 ·Chenming Hu, Ali M. Niknejad, (unknown), Darsen D. Lu, Yogesh Singh Chauhan, (unknown), Angada B. Sachid	5
14	Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs 2012 ·IEEE Electron Device Letters ·Azharul Karim, Yogesh Singh Chauhan, Sriramkumar Venugopalan, Angada B. Sachid, Darsen D. Lu, B.-Y. Nguyen, O. Faynot, Ali M. Niknejad, C. Hu	43
15	Insights Into the Design and Optimization of Tunnel-FET Devices and Circuits 2011 ·IEEE Transactions on Electron Devices ·(unknown), Angada B. Sachid, Harald Goßner, V. Ramgopal Rao	91
16	Automated design and optimization of circuits in emerging technologies 2009 ·Asia and South Pacific Design Automation Conference ·Rajesh A. Thakker, Chaitanya Sathe, Angada B. Sachid, Maryam Shojaei Baghini, V. Ramgopal Rao, Mahesh B. Patil	2
17	Impact of Fringe Capacitance on the Performance of Nanoscale FinFETs 2009 ·IEEE Electron Device Letters ·(unknown), Angada B. Sachid, Yuan Feng, Chang-Yun Chang, V. Ramgopal Rao	24
18	Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects 2009 ·ECS Transactions ·(unknown), Angada B. Sachid, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Hiroshi Iwai	2
19	A Novel and Robust Approach for Common Mode Feedback Using IDDG FinFET 2008 ·IEEE Transactions on Electron Devices ·Mayank Shrivastava, Maryam Shojaei Baghini, Angada B. Sachid, Dinesh Kumar Sharma, V. Ramgopal Rao	31
20	Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects 2008 ·ECS Meeting Abstracts ·Yusuke Kobayashi, Angada B. Sachid, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Hiroshi Iwai	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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