C. Carabasse

1.1k total citations
39 papers, 362 citations indexed

About

C. Carabasse is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, C. Carabasse has authored 39 papers receiving a total of 362 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 4 papers in Cellular and Molecular Neuroscience. Recurrent topics in C. Carabasse's work include Ferroelectric and Negative Capacitance Devices (31 papers), Advanced Memory and Neural Computing (29 papers) and Semiconductor materials and devices (26 papers). C. Carabasse is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (31 papers), Advanced Memory and Neural Computing (29 papers) and Semiconductor materials and devices (26 papers). C. Carabasse collaborates with scholars based in France, Germany and Italy. C. Carabasse's co-authors include G. Molas, L. Grenouillet, Elisa Vianello, B. De Salvo, J. Coignus, E. Nowak, Nicolas Vaxelaire, C. Cagli, V. Delaye and T. Magis and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

C. Carabasse

38 papers receiving 353 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Carabasse France 12 358 118 57 42 32 39 362
Gilbert Sassine France 11 279 0.8× 56 0.5× 60 1.1× 43 1.0× 82 2.6× 18 309
Miaocheng Zhang China 12 331 0.9× 233 2.0× 54 0.9× 41 1.0× 39 1.2× 26 366
Maciej Wojdak United Kingdom 4 293 0.8× 98 0.8× 102 1.8× 30 0.7× 51 1.6× 5 321
Kensuke Ota Japan 10 387 1.1× 113 1.0× 34 0.6× 41 1.0× 16 0.5× 34 403
Lingfei Wang China 9 263 0.7× 107 0.9× 50 0.9× 42 1.0× 42 1.3× 34 306
Sadegh Kamaei Switzerland 7 184 0.5× 127 1.1× 31 0.5× 88 2.1× 21 0.7× 16 300
X. Li Singapore 10 399 1.1× 47 0.4× 46 0.8× 32 0.8× 28 0.9× 19 411
Byeong Hyeon Lee South Korea 10 302 0.8× 168 1.4× 31 0.5× 62 1.5× 60 1.9× 29 338
Hasita Veluri Singapore 6 355 1.0× 168 1.4× 78 1.4× 39 0.9× 46 1.4× 14 397
Shunichi Kaeriyama Japan 12 434 1.2× 42 0.4× 63 1.1× 61 1.5× 37 1.2× 18 441

Countries citing papers authored by C. Carabasse

Since Specialization
Citations

This map shows the geographic impact of C. Carabasse's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Carabasse with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Carabasse more than expected).

Fields of papers citing papers by C. Carabasse

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Carabasse. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Carabasse. The network helps show where C. Carabasse may publish in the future.

Co-authorship network of co-authors of C. Carabasse

This figure shows the co-authorship network connecting the top 25 collaborators of C. Carabasse. A scholar is included among the top collaborators of C. Carabasse based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Carabasse. C. Carabasse is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hirtzlin, Tifenn, C. Carabasse, Adrien F. Vincent, et al.. (2025). A ferroelectric–memristor memory for both training and inference. Nature Electronics. 8(10). 921–933. 1 indexed citations
2.
Coignus, J., et al.. (2024). Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. SPIRE - Sciences Po Institutional REpository. 1–7.
3.
Barrett, N., C. Lubin, C. Carabasse, et al.. (2024). Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers. Applied Physics Letters. 125(4). 5 indexed citations
4.
Navarro, G., M. Bernard, C. Carabasse, et al.. (2024). 1S1R Multi-Level-Cell for Dense Quantized Recurrent Spiking Neural Network Inference Computing. 1 indexed citations
5.
Coignus, J., François Triozon, C. Carabasse, et al.. (2023). Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions. Journal of Applied Physics. 134(21). 5 indexed citations
6.
Hirtzlin, Tifenn, Sébastien Martin, C. Carabasse, et al.. (2023). Hybrid FeRAM/RRAM Synaptic Circuit Enabling On-Chip Inference and Learning at the Edge. SPIRE - Sciences Po Institutional REpository. 1–4. 5 indexed citations
7.
Alcala, Ruben, Monica Materano, Patrick D. Lomenzo, et al.. (2022). BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions. IEEE Journal of the Electron Devices Society. 10. 907–912. 17 indexed citations
8.
Coignus, J., Nicolas Vaxelaire, C. Carabasse, et al.. (2022). Interplay between charge trapping and polarization switching in MFDM stacks evidenced by frequency-dependent measurements. 125–128. 2 indexed citations
9.
Coignus, J., François Triozon, C. Carabasse, et al.. (2022). Electrical Assessment of Scaled HfO<sub>2</sub>-Based BEOL-Integrated FTJs Leading to Multi-Level Capability Demonstration. 1 indexed citations
10.
Hirtzlin, Tifenn, L. Grenouillet, G. Navarro, et al.. (2021). OxRAM + OTS optimization for binarized neural network hardware implementation. Semiconductor Science and Technology. 37(1). 14001–14001. 3 indexed citations
11.
Grenouillet, L., J. Coignus, S. Kerdilès, et al.. (2020). Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL). SPIRE - Sciences Po Institutional REpository. 1–2. 26 indexed citations
12.
Vianello, Elisa, G. Navarro, C. Carabasse, et al.. (2017). In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors. HAL (Le Centre pour la Communication Scientifique Directe). 2.3.1–2.3.4. 21 indexed citations
13.
Berthier, R., et al.. (2017). In Situ Biasing of Conductive Bridge Resistive Memory Devices Observed in a Transmission Electron Microscope. Microscopy and Microanalysis. 23(S1). 1452–1453. 1 indexed citations
14.
Palma, Giorgio, Elisa Vianello, Olivier Thomas, et al.. (2014). Interface Engineering of Ag-${\rm GeS}_{2}$-Based Conductive Bridge RAM for Reconfigurable Logic Applications. IEEE Transactions on Electron Devices. 61(3). 793–800. 9 indexed citations
15.
Palma, Giorgio, Elisa Vianello, G. Molas, et al.. (2013). Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS2-Based Conductive Bridge Memories. Japanese Journal of Applied Physics. 52(4S). 04CD02–04CD02. 12 indexed citations
16.
Vianello, Elisa, G. Molas, Giorgio Palma, et al.. (2013). On disturb immunity and P/E kinetics of Sb-doped GeS<inf>2</inf>/Ag conductive bridge memories. 2 indexed citations
17.
Vianello, Elisa, C. Cagli, G. Molas, et al.. (2013). On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories. Solid-State Electronics. 84. 155–159. 21 indexed citations
18.
Vianello, Elisa, C. Cagli, G. Molas, et al.. (2012). On the impact of Ag doping on performance and reliability of GeS<inf>2</inf>-based Conductive Bridge Memories. 9 indexed citations
19.
20.
Bécu, Stéphane, C. Dupré, V. Maffini-Alvaro, et al.. (2008). Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization. ECS Transactions. 13(1). 195–199. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026