Jong‐Ho Bae

2.8k total citations
136 papers, 1.9k citations indexed

About

Jong‐Ho Bae is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Materials Chemistry. According to data from OpenAlex, Jong‐Ho Bae has authored 136 papers receiving a total of 1.9k indexed citations (citations by other indexed papers that have themselves been cited), including 126 papers in Electrical and Electronic Engineering, 27 papers in Cellular and Molecular Neuroscience and 26 papers in Materials Chemistry. Recurrent topics in Jong‐Ho Bae's work include Advanced Memory and Neural Computing (67 papers), Semiconductor materials and devices (48 papers) and Ferroelectric and Negative Capacitance Devices (47 papers). Jong‐Ho Bae is often cited by papers focused on Advanced Memory and Neural Computing (67 papers), Semiconductor materials and devices (48 papers) and Ferroelectric and Negative Capacitance Devices (47 papers). Jong‐Ho Bae collaborates with scholars based in South Korea, United States and Japan. Jong‐Ho Bae's co-authors include Jong‐Ho Lee, Byung‐Gook Park, Dongseok Kwon, Suhwan Lim, Wonjun Shin, Ava J. Tan, Sayeef Salahuddin, Chenming Hu, Sung Yun Woo and Sung‐Tae Lee and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Jong‐Ho Bae

130 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jong‐Ho Bae South Korea 24 1.8k 406 337 253 236 136 1.9k
G. Molas France 25 1.9k 1.0× 531 1.3× 136 0.4× 240 0.9× 103 0.4× 142 2.0k
Bongsik Choi South Korea 15 721 0.4× 223 0.5× 450 1.3× 220 0.9× 51 0.2× 35 1.1k
Jiadi Zhu China 16 1.8k 1.0× 473 1.2× 250 0.7× 685 2.7× 264 1.1× 35 2.1k
Chunmeng Dou China 19 1.2k 0.6× 214 0.5× 158 0.5× 306 1.2× 152 0.6× 75 1.4k
B. De Salvo France 25 2.2k 1.2× 820 2.0× 252 0.7× 250 1.0× 83 0.4× 183 2.4k
Dongseok Kwon South Korea 20 1.0k 0.6× 151 0.4× 164 0.5× 173 0.7× 225 1.0× 80 1.1k
Lan Wei Canada 24 1.7k 0.9× 394 1.0× 243 0.7× 304 1.2× 158 0.7× 95 2.1k
Udayan Ganguly India 22 1.8k 1.0× 335 0.8× 166 0.5× 331 1.3× 202 0.9× 191 1.9k
Amritanand Sebastian United States 14 1.3k 0.7× 1.3k 3.3× 375 1.1× 165 0.7× 132 0.6× 16 2.0k

Countries citing papers authored by Jong‐Ho Bae

Since Specialization
Citations

This map shows the geographic impact of Jong‐Ho Bae's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jong‐Ho Bae with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jong‐Ho Bae more than expected).

Fields of papers citing papers by Jong‐Ho Bae

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jong‐Ho Bae. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jong‐Ho Bae. The network helps show where Jong‐Ho Bae may publish in the future.

Co-authorship network of co-authors of Jong‐Ho Bae

This figure shows the co-authorship network connecting the top 25 collaborators of Jong‐Ho Bae. A scholar is included among the top collaborators of Jong‐Ho Bae based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jong‐Ho Bae. Jong‐Ho Bae is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jung, Gyuweon, et al.. (2024). On‐Chip Annealing Using Embedded Micro‐Heater for Highly Sensitive and Selective Gas Detection. Advanced Science. 11(28). e2401821–e2401821. 4 indexed citations
2.
Kim, Haesung, Sung‐Jin Choi, Dae Hwan Kim, et al.. (2024). Analysis of the Role of Interfacial Layer in Ferroelectric FET Failure as a Memory Cell. IEEE Electron Device Letters. 45(4). 562–565. 4 indexed citations
3.
Jeon, Kwang W., et al.. (2024). Development of an In-Pipe Inspection Robot for Large-Diameter Water Pipes. Sensors. 24(11). 3470–3470. 8 indexed citations
4.
Kim, Haesung, Sung‐Jin Choi, Dae Hwan Kim, et al.. (2024). Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer. Applied Physics Letters. 124(3). 2 indexed citations
5.
Park, Minkyu, et al.. (2024). Highly Reliable Lateral Migration-Based TFT-Type Neuron Device for Spiking Neural Networks. IEEE Electron Device Letters. 45(10). 1780–1783. 1 indexed citations
6.
Bae, Jong‐Ho, et al.. (2023). Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices. Materials. 16(3). 1249–1249. 7 indexed citations
7.
Kim, Wonjung, Jun Tae Jang, Changwook Kim, et al.. (2023). Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor. IEEE Access. 11. 20196–20201. 6 indexed citations
8.
Park, Jingyu, Sungju Choi, Changwook Kim, et al.. (2022). Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors. IEEE Electron Device Letters. 43(10). 1685–1688. 5 indexed citations
9.
Lee, Sangwon, Jingyu Park, Changwook Kim, et al.. (2022). Analysis of a-InGaZnO TFT Threshold Voltage Instability and Mobility Boosting by Current Stress at a Cryogenic Temperature. IEEE Electron Device Letters. 44(1). 88–91. 7 indexed citations
10.
Park, Jingyu, Sungju Choi, Jae-Young Kim, et al.. (2022). Spatial Degradation Profiling Technique in Self-Aligned Top-Gate a-InGaZnO TFTs Under Current-Flowing Stress. IEEE Electron Device Letters. 44(1). 96–99. 4 indexed citations
11.
Choi, Sungju, Sangwon Lee, Jingyu Park, et al.. (2022). Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications. IEEE Transactions on Electron Devices. 70(1). 48–52. 2 indexed citations
12.
Lee, Soochang, Sung Yun Woo, Dongseok Kwon, et al.. (2021). Spiking Neural Networks With Time-to-First-Spike Coding Using TFT-Type Synaptic Device Model. IEEE Access. 9. 78098–78107. 10 indexed citations
13.
Kwon, Dongseok, Gyuweon Jung, Wonjun Shin, et al.. (2021). Efficient fusion of spiking neural networks and FET-type gas sensors for a fast and reliable artificial olfactory system. Sensors and Actuators B Chemical. 345. 130419–130419. 32 indexed citations
14.
Park, Jingyu, Sungju Choi, Changwook Kim, et al.. (2021). Total Subgap Range Density of States-Based Analysis of the Effect of Oxygen Flow Rate on the Bias Stress Instabilities in a-IGZO TFTs. IEEE Transactions on Electron Devices. 69(1). 166–173. 35 indexed citations
15.
Choi, Bongsik, et al.. (2021). Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells. IEEE Electron Device Letters. 42(8). 1148–1151. 17 indexed citations
16.
Jang, Jun Tae, Shinyoung Park, Md. Hasan Raza Ansari, et al.. (2021). Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System. IEEE Access. 9. 59345–59352. 20 indexed citations
17.
Hong, Yoonki, Meile Wu, Jong‐Ho Bae, et al.. (2019). A new sensing mechanism of Si FET-based gas sensor using pre-bias. Sensors and Actuators B Chemical. 302. 127147–127147. 12 indexed citations
18.
Bae, Jong‐Ho, Min-Woo Kwon, Jae Hwa Seo, et al.. (2019). Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications. IEEE Electron Device Letters. 40(10). 1614–1617. 19 indexed citations
19.
Kim, Chul-Heung, Suhwan Lim, Sung Yun Woo, et al.. (2018). Emerging memory technologies for neuromorphic computing. Nanotechnology. 30(3). 32001–32001. 70 indexed citations
20.
Kim, Chul-Heung, Soochang Lee, Sung Yun Woo, et al.. (2018). Demonstration of Unsupervised Learning With Spike-Timing-Dependent Plasticity Using a TFT-Type NOR Flash Memory Array. IEEE Transactions on Electron Devices. 65(5). 1774–1780. 52 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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