Ł. Macht

505 total citations
23 papers, 434 citations indexed

About

Ł. Macht is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Ł. Macht has authored 23 papers receiving a total of 434 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 11 papers in Materials Chemistry. Recurrent topics in Ł. Macht's work include GaN-based semiconductor devices and materials (21 papers), ZnO doping and properties (11 papers) and Semiconductor materials and devices (7 papers). Ł. Macht is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), ZnO doping and properties (11 papers) and Semiconductor materials and devices (7 papers). Ł. Macht collaborates with scholars based in Netherlands, Poland and United States. Ł. Macht's co-authors include J.L. Weyher, P.K. Larsen, P.R. Hageman, I. Grzegory, H.W. Zandbergen, F.D. Tichelaar, Sorin Lazar, S. Müller, G. Nowak and Z. Liliental‐Weber and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

Ł. Macht

21 papers receiving 420 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ł. Macht Netherlands 13 377 203 202 197 77 23 434
A. Chandolu United States 13 276 0.7× 219 1.1× 184 0.9× 172 0.9× 61 0.8× 21 427
R. J. Gorman United States 9 331 0.9× 211 1.0× 140 0.7× 189 1.0× 72 0.9× 19 389
Takeshi Eri Japan 8 491 1.3× 246 1.2× 248 1.2× 247 1.3× 90 1.2× 8 521
Hiroya Kimura Japan 5 429 1.1× 209 1.0× 164 0.8× 232 1.2× 88 1.1× 6 459
Da-Cheng Lu China 11 276 0.7× 162 0.8× 161 0.8× 142 0.7× 104 1.4× 33 378
Chinkyo Kim South Korea 10 271 0.7× 255 1.3× 120 0.6× 152 0.8× 63 0.8× 49 408
Shuichi Kubo Japan 5 387 1.0× 208 1.0× 156 0.8× 236 1.2× 61 0.8× 9 422
Mitsuhisa Narukawa Japan 8 429 1.1× 279 1.4× 105 0.5× 210 1.1× 125 1.6× 9 450
S. M. Donovan United States 13 453 1.2× 158 0.8× 367 1.8× 174 0.9× 137 1.8× 38 551
Christoph Hums Germany 9 429 1.1× 164 0.8× 152 0.8× 185 0.9× 166 2.2× 15 486

Countries citing papers authored by Ł. Macht

Since Specialization
Citations

This map shows the geographic impact of Ł. Macht's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ł. Macht with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ł. Macht more than expected).

Fields of papers citing papers by Ł. Macht

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ł. Macht. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ł. Macht. The network helps show where Ł. Macht may publish in the future.

Co-authorship network of co-authors of Ł. Macht

This figure shows the co-authorship network connecting the top 25 collaborators of Ł. Macht. A scholar is included among the top collaborators of Ł. Macht based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ł. Macht. Ł. Macht is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bijnen, F.G.C., Ł. Macht, Jin Dai, et al.. (2021). Qualification of small alignment mark by on-product overlay performance. 17–17.
2.
3.
Rudziński, M., E. Jezierska, J.L. Weyher, et al.. (2007). Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates. physica status solidi (a). 204(12). 4230–4240. 18 indexed citations
4.
Weyher, J.L., Sorin Lazar, Ł. Macht, et al.. (2007). Orthodox etching of HVPE-grown GaN. Journal of Crystal Growth. 305(2). 384–392. 108 indexed citations
5.
Weyher, J.L., R. Lewandowska, Ł. Macht, B. Łucznik, & I. Grzegory. (2006). Etching, Raman and PL study of thick HVPE-grown GaN. Materials Science in Semiconductor Processing. 9(1-3). 175–179. 11 indexed citations
6.
7.
Macht, Ł., P.R. Hageman, S. Haffouz, & P.K. Larsen. (2005). Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates. Applied Physics Letters. 87(13). 16 indexed citations
8.
Weyher, J.L. & Ł. Macht. (2004). Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods. The European Physical Journal Applied Physics. 27(1-3). 37–41. 16 indexed citations
9.
Lazar, Sorin, J.L. Weyher, Ł. Macht, F.D. Tichelaar, & H.W. Zandbergen. (2004). Nanopipes in GaN: photo-etching and TEM study. The European Physical Journal Applied Physics. 27(1-3). 275–278. 13 indexed citations
10.
Macht, Ł., et al.. (2004). An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology. Journal of Crystal Growth. 273(3-4). 347–356. 33 indexed citations
11.
Macht, Ł., et al.. (2004). Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD. Journal of Crystal Growth. 273(3-4). 424–430. 18 indexed citations
12.
Weyher, J.L., Ł. Macht, G. Kamler, J. Borysiuk, & I. Grzegory. (2003). Characterization of GaN single crystals by defect‐selective etching. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 821–826. 23 indexed citations
13.
Weyher, J.L., Ł. Macht, F.D. Tichelaar, et al.. (2002). Complementary study of defects in GaN by photo-etching and TEM. Materials Science and Engineering B. 91-92. 280–284. 16 indexed citations
14.
Macht, Ł., J.L. Weyher, P.R. Hageman, Marcin Zieliński, & P.K. Larsen. (2002). The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN. Journal of Physics Condensed Matter. 14(48). 13345–13350. 12 indexed citations
15.
Haffouz, S., et al.. (2002). Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate. Materials Science and Engineering B. 97(1). 9–12. 12 indexed citations
16.
Weyher, J.L., F.D. Tichelaar, H.W. Zandbergen, Ł. Macht, & P.R. Hageman. (2001). Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN. Journal of Applied Physics. 90(12). 6105–6109. 49 indexed citations
17.
Haffouz, S., et al.. (2001). Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment. Applied Physics Letters. 79(15). 2390–2392. 22 indexed citations
18.
Hageman, P.R., Peter C. M. Christianen, Marcin Zieliński, et al.. (2001). Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy. physica status solidi (a). 188(1). 473–476. 8 indexed citations
19.
Hageman, P.R., et al.. (2001). Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment. physica status solidi (a). 188(2). 659–662. 1 indexed citations
20.
Hageman, P.R., et al.. (2001). Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment. physica status solidi (a). 188(2). 659–662. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by A. Chandolu Breakdown of academic impact, for papers by R. J. Gorman Breakdown of academic impact, for papers by Takeshi Eri Breakdown of academic impact, for papers by Hiroya Kimura Breakdown of academic impact, for papers by Da-Cheng Lu Breakdown of academic impact, for papers by Chinkyo Kim Breakdown of academic impact, for papers by Shuichi Kubo Breakdown of academic impact, for papers by Mitsuhisa Narukawa Breakdown of academic impact, for papers by S. M. Donovan Breakdown of academic impact, for papers by Christoph Hums
Rankless by CCL
2026