B. Sadovyi

407 total citations
33 papers, 325 citations indexed

About

B. Sadovyi is a scholar working on Condensed Matter Physics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, B. Sadovyi has authored 33 papers receiving a total of 325 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Condensed Matter Physics, 20 papers in Materials Chemistry and 17 papers in Electrical and Electronic Engineering. Recurrent topics in B. Sadovyi's work include GaN-based semiconductor devices and materials (21 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (11 papers). B. Sadovyi is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), ZnO doping and properties (14 papers) and Ga2O3 and related materials (11 papers). B. Sadovyi collaborates with scholars based in Poland, Ukraine and Belarus. B. Sadovyi's co-authors include I. Grzegory, Michał Boćkowski, B. Łucznik, Tomasz Sochacki, S. Porowski, J.L. Weyher, Mikolaj Amilusik, G. Nowak, G. Kamler and S. Gierlotka and has published in prestigious journals such as Chemistry of Materials, ACS Applied Materials & Interfaces and International Journal of Molecular Sciences.

In The Last Decade

B. Sadovyi

30 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Sadovyi Poland 12 251 145 141 132 84 33 325
T. Nishihara Japan 12 262 1.0× 203 1.4× 240 1.7× 102 0.8× 81 1.0× 24 423
Stéphane Brochen France 12 112 0.4× 245 1.7× 120 0.9× 225 1.7× 79 0.9× 17 381
Takeshi Kusumori Japan 10 155 0.6× 212 1.5× 123 0.9× 135 1.0× 62 0.7× 33 326
Roselyne Templier France 9 94 0.4× 234 1.6× 59 0.4× 207 1.6× 101 1.2× 18 340
D. Shiell United States 6 328 1.3× 171 1.2× 237 1.7× 134 1.0× 74 0.9× 8 435
V. P. Martovitsky Russia 10 138 0.5× 121 0.8× 86 0.6× 147 1.1× 119 1.4× 40 329
Yu. P. Stepanov Russia 13 466 1.9× 262 1.8× 222 1.6× 92 0.7× 131 1.6× 49 564
Kazuto Ikeda Japan 12 180 0.7× 136 0.9× 112 0.8× 196 1.5× 115 1.4× 59 404
Y. Miura Japan 11 86 0.3× 99 0.7× 128 0.9× 142 1.1× 116 1.4× 31 350
Hideaki Zama Japan 12 220 0.9× 164 1.1× 129 0.9× 109 0.8× 77 0.9× 42 321

Countries citing papers authored by B. Sadovyi

Since Specialization
Citations

This map shows the geographic impact of B. Sadovyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Sadovyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Sadovyi more than expected).

Fields of papers citing papers by B. Sadovyi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Sadovyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Sadovyi. The network helps show where B. Sadovyi may publish in the future.

Co-authorship network of co-authors of B. Sadovyi

This figure shows the co-authorship network connecting the top 25 collaborators of B. Sadovyi. A scholar is included among the top collaborators of B. Sadovyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Sadovyi. B. Sadovyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sadovyi, B., А.С. Ніколенко, V. V. Strelchuk, et al.. (2025). Crystal Growth of hBN from Ni and Ni–Cr Solutions at High N 2 pressure. ACS Applied Materials & Interfaces. 17(46). 63610–63622.
3.
Piechota, Jacek, et al.. (2024). Ab Initio Molecular Dynamics Insight to Structural Phase Transition and Thermal Decomposition of InN. International Journal of Molecular Sciences. 25(15). 8281–8281. 1 indexed citations
4.
Piechota, Jacek, et al.. (2023). Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data. Chemistry of Materials. 35(18). 7694–7707. 8 indexed citations
5.
Karbovnyk, Ivan, et al.. (2023). Luminescence polarization enhancement in Alq3/ZnO microdisks multilayer structures. Applied Nanoscience. 13(12). 7485–7490.
6.
Kapustianyk, V., et al.. (2021). Magnetic and Ferroelectric Properties of New Potential Magnetic Multiferroic [N(C2H54]2CoCl2Br2. Acta Physica Polonica A. 140(5). 450–454. 2 indexed citations
7.
Turko, B., А.С. Ніколенко, B. Sadovyi, et al.. (2021). Ultraviolet electroluminescence of LED devices based on n-ZnO nanorods grown by various methods and p-GaN films. Journal of Physical Studies. 25(1). 2 indexed citations
8.
Sadovyi, B., Małgorzata Wierzbowska, S. Stelmakh, et al.. (2020). Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure. Physical review. B.. 102(23). 18 indexed citations
9.
Turko, B., А.С. Ніколенко, B. Sadovyi, et al.. (2019). Electroluminescence from n-ZnO microdisks/p-GaN heterostructure. Optical and Quantum Electronics. 51(5). 12 indexed citations
10.
Karbovnyk, Ivan, B. Sadovyi, B. Turko, et al.. (2019). Formation of oriented luminescent organic thin films on modified polymer substrate. Applied Nanoscience. 10(8). 2791–2796. 4 indexed citations
11.
Porowski, S., B. Sadovyi, Ivan Karbovnyk, et al.. (2018). Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN?. Journal of Crystal Growth. 505. 5–9. 6 indexed citations
12.
Ніколенко, А.С., V. V. Strelchuk, Morgan E. Ware, et al.. (2017). Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire. Nanoscale Research Letters. 12(1). 397–397. 4 indexed citations
13.
Sadovyi, B., Mikolaj Amilusik, E. Litwin‐Staszewska, et al.. (2016). Influence of crystallization front direction on the Mg-related impurity centers incorporation in bulk GaN:Mg grown by HNPS method. Optical Materials. 58. 491–496. 1 indexed citations
14.
Sadovyi, B., А.С. Ніколенко, J.L. Weyher, et al.. (2016). Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure. Journal of Crystal Growth. 449. 35–42. 11 indexed citations
15.
Sadovyi, B., Mikolaj Amilusik, Michał Boćkowski, et al.. (2016). High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions. Acta Physica Polonica A. 129(1a). A–126. 2 indexed citations
16.
Amilusik, Mikolaj, Tomasz Sochacki, B. Łucznik, et al.. (2014). Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds. Journal of Crystal Growth. 403. 48–54. 30 indexed citations
17.
Sochacki, Tomasz, Zachary Bryan, Mikolaj Amilusik, et al.. (2013). Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds. Applied Physics Express. 6(7). 75504–75504. 54 indexed citations
18.
Amilusik, Mikolaj, Tomasz Sochacki, B. Łucznik, et al.. (2013). Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask. Journal of Crystal Growth. 380. 99–105. 17 indexed citations
19.
Boćkowski, Michał, B. Łucznik, Tomasz Sochacki, et al.. (2012). High nitrogen pressure solution growth of GaN in multi feed‐seed configuration. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 9(3-4). 453–456. 5 indexed citations
20.
Grzegory, I., Michał Boćkowski, B. Łucznik, et al.. (2011). Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration. Journal of Crystal Growth. 350(1). 50–55. 13 indexed citations

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