M. Siekacz

2.0k total citations
113 papers, 1.6k citations indexed

About

M. Siekacz is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, M. Siekacz has authored 113 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 112 papers in Condensed Matter Physics, 79 papers in Atomic and Molecular Physics, and Optics and 46 papers in Electrical and Electronic Engineering. Recurrent topics in M. Siekacz's work include GaN-based semiconductor devices and materials (112 papers), Semiconductor Quantum Structures and Devices (78 papers) and Ga2O3 and related materials (30 papers). M. Siekacz is often cited by papers focused on GaN-based semiconductor devices and materials (112 papers), Semiconductor Quantum Structures and Devices (78 papers) and Ga2O3 and related materials (30 papers). M. Siekacz collaborates with scholars based in Poland, Canada and Germany. M. Siekacz's co-authors include C. Skierbiszewski, Henryk Turski, S. Porowski, G. Muzioł, Z. R. Wasilewski, Marta Sawicka, I. Grzegory, Anna Feduniewicz‐Żmuda, G. Cywiński and P. Perlin and has published in prestigious journals such as Nature, Nature Communications and Applied Physics Letters.

In The Last Decade

M. Siekacz

110 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Siekacz Poland 24 1.4k 918 547 499 456 113 1.6k
T. Remmele Germany 21 892 0.6× 794 0.9× 570 1.0× 662 1.3× 556 1.2× 55 1.6k
J. J. Song United States 20 1.5k 1.1× 1.0k 1.1× 569 1.0× 795 1.6× 693 1.5× 60 1.9k
S. Elhamri United States 19 716 0.5× 906 1.0× 1.0k 1.9× 487 1.0× 390 0.9× 83 1.6k
Hock M. Ng United States 11 1.1k 0.8× 629 0.7× 565 1.0× 475 1.0× 437 1.0× 14 1.4k
B. El Jani Tunisia 22 1.1k 0.8× 896 1.0× 952 1.7× 790 1.6× 519 1.1× 147 1.8k
S. B. Fleischer United States 12 1.0k 0.7× 673 0.7× 442 0.8× 446 0.9× 583 1.3× 20 1.4k
Po Shan Hsu United States 18 845 0.6× 532 0.6× 291 0.5× 286 0.6× 272 0.6× 28 908
Kazuyuki Chocho Japan 10 1.9k 1.3× 942 1.0× 704 1.3× 764 1.5× 700 1.5× 10 2.0k
Hitoshi Umemoto Japan 11 2.0k 1.4× 1.0k 1.1× 739 1.4× 810 1.6× 734 1.6× 12 2.2k
B. Goldenberg United States 17 1.4k 1.0× 740 0.8× 507 0.9× 671 1.3× 695 1.5× 31 1.6k

Countries citing papers authored by M. Siekacz

Since Specialization
Citations

This map shows the geographic impact of M. Siekacz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Siekacz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Siekacz more than expected).

Fields of papers citing papers by M. Siekacz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Siekacz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Siekacz. The network helps show where M. Siekacz may publish in the future.

Co-authorship network of co-authors of M. Siekacz

This figure shows the co-authorship network connecting the top 25 collaborators of M. Siekacz. A scholar is included among the top collaborators of M. Siekacz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Siekacz. M. Siekacz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zhang, Zexuan, Anna Feduniewicz‐Żmuda, M. Siekacz, et al.. (2024). Using both faces of polar semiconductor wafers for functional devices. Nature. 634(8033). 334–340. 17 indexed citations
2.
3.
Muzioł, G., M. Siekacz, Д. М. Берча, et al.. (2023). Bidirectional light-emitting diode as a visible light source driven by alternating current. Nature Communications. 14(1). 7562–7562. 2 indexed citations
4.
Muzioł, G., et al.. (2022). Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes. Optics Express. 30(15). 27004–27004. 15 indexed citations
5.
Turski, Henryk, P. Wolny, Marta Sawicka, et al.. (2022). Role of Metallic Adlayer in Limiting Ge Incorporation into GaN. Materials. 15(17). 5929–5929. 3 indexed citations
6.
Schulz, Tobias, L. Lymperakis, M. Siekacz, et al.. (2020). Influence of strain on the indium incorporation in (0001) GaN. Physical Review Materials. 4(7). 12 indexed citations
7.
Turski, Henryk, M. Siekacz, G. Muzioł, et al.. (2020). Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design. 34–34. 2 indexed citations
8.
Wolny, P., Marta Sawicka, Tobias Schulz, et al.. (2018). Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices. Journal of Applied Physics. 124(6). 10 indexed citations
9.
Siekacz, M., Ewa Grzanka, Tobias Schulz, et al.. (2018). Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application. Applied Physics Letters. 113(3). 21 indexed citations
10.
Chèze, Caroline, M. Siekacz, Fabio Isa, et al.. (2016). Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices. Journal of Applied Physics. 120(12). 13 indexed citations
11.
Muzioł, G., Henryk Turski, M. Siekacz, et al.. (2016). Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide. Applied Physics Express. 9(9). 92103–92103. 29 indexed citations
12.
Muzioł, G., Henryk Turski, M. Siekacz, et al.. (2015). Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy. Applied Physics Express. 8(3). 32103–32103. 29 indexed citations
13.
Gładysiewicz, M., et al.. (2015). Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures. Applied Physics Letters. 107(26). 9 indexed citations
14.
Isa, Fabio, Caroline Chèze, M. Siekacz, et al.. (2015). Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design. 15(10). 4886–4892. 10 indexed citations
15.
Chèze, Caroline, Marta Sawicka, M. Siekacz, et al.. (2013). Step-flow growth mode instability of N-polar GaN under N-excess. Applied Physics Letters. 103(7). 15 indexed citations
16.
Chèze, Caroline, M. Siekacz, G. Muzioł, et al.. (2013). Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(3). 16 indexed citations
17.
18.
Turski, Henryk, et al.. (2013). Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8625. 862527–862527. 2 indexed citations
19.
Siekacz, M., Marta Sawicka, Henryk Turski, et al.. (2011). Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 110(6). 37 indexed citations
20.
Cywiński, G., C. Skierbiszewski, Anna Feduniewicz‐Żmuda, et al.. (2006). Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm. Acta Physica Polonica A. 110(2). 175–181. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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