M. Sarzyński

443 total citations
35 papers, 328 citations indexed

About

M. Sarzyński is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Sarzyński has authored 35 papers receiving a total of 328 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Condensed Matter Physics, 18 papers in Electrical and Electronic Engineering and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Sarzyński's work include GaN-based semiconductor devices and materials (31 papers), Semiconductor Quantum Structures and Devices (14 papers) and Metal and Thin Film Mechanics (11 papers). M. Sarzyński is often cited by papers focused on GaN-based semiconductor devices and materials (31 papers), Semiconductor Quantum Structures and Devices (14 papers) and Metal and Thin Film Mechanics (11 papers). M. Sarzyński collaborates with scholars based in Poland, Ukraine and Belarus. M. Sarzyński's co-authors include M. Leszczyński, T. Suski, R. Czernecki, M. Kryśko, J. Z. Domagała, P. Perlin, S. Porowski, I. Grzegory, Szymon Grzanka and G. Targowski and has published in prestigious journals such as Applied Physics Letters, Optics Express and Journal of Applied Crystallography.

In The Last Decade

M. Sarzyński

35 papers receiving 308 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Sarzyński Poland 12 276 139 139 94 87 35 328
A. Ougazzaden France 9 218 0.8× 100 0.7× 127 0.9× 161 1.7× 125 1.4× 18 326
J.W. Graff United States 12 345 1.3× 167 1.2× 217 1.6× 151 1.6× 157 1.8× 25 442
Hao-Chung Kuo Taiwan 12 230 0.8× 134 1.0× 143 1.0× 146 1.6× 111 1.3× 27 356
Yong‐Tae Moon South Korea 12 313 1.1× 110 0.8× 154 1.1× 206 2.2× 158 1.8× 16 399
Y. Gong United Kingdom 12 342 1.2× 133 1.0× 99 0.7× 163 1.7× 181 2.1× 26 382
R. C. Tu Taiwan 11 312 1.1× 179 1.3× 168 1.2× 222 2.4× 142 1.6× 30 424
Jordan R. Lang United States 9 223 0.8× 218 1.6× 273 2.0× 93 1.0× 98 1.1× 12 422
H.H. Yao Taiwan 9 226 0.8× 185 1.3× 197 1.4× 125 1.3× 100 1.1× 16 375
S. Hasenöhrl Slovakia 11 138 0.5× 206 1.5× 238 1.7× 163 1.7× 84 1.0× 82 412
M. W. Cho Japan 9 205 0.7× 108 0.8× 176 1.3× 208 2.2× 142 1.6× 25 358

Countries citing papers authored by M. Sarzyński

Since Specialization
Citations

This map shows the geographic impact of M. Sarzyński's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Sarzyński with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Sarzyński more than expected).

Fields of papers citing papers by M. Sarzyński

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Sarzyński. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Sarzyński. The network helps show where M. Sarzyński may publish in the future.

Co-authorship network of co-authors of M. Sarzyński

This figure shows the co-authorship network connecting the top 25 collaborators of M. Sarzyński. A scholar is included among the top collaborators of M. Sarzyński based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Sarzyński. M. Sarzyński is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sarzyński, M., Ewa Grzanka, Szymon Grzanka, et al.. (2019). Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes. Materials. 12(16). 2583–2583. 5 indexed citations
2.
Karbovnyk, Ivan, B. Sadovyi, B. Turko, et al.. (2019). Formation of oriented luminescent organic thin films on modified polymer substrate. Applied Nanoscience. 10(8). 2791–2796. 4 indexed citations
3.
Kafar, Anna, Szymon Stańczyk, M. Sarzyński, et al.. (2018). InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note. Photonics Research. 6(6). 652–652. 1 indexed citations
4.
Kafar, Anna, Szymon Stańczyk, M. Sarzyński, et al.. (2017). InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter. Photonics Research. 5(2). A30–A30. 13 indexed citations
5.
Kruszewski, P., et al.. (2017). Properties of AlGaN/GaN Ni/Au-Schottky diodes on 2°-off silicon carbide substrates. physica status solidi (a). 214(4). 1600376–1600376. 6 indexed citations
6.
Sarzyński, M., J. Z. Domagała, Ewa Grzanka, et al.. (2017). Monolithic cyan − violet InGaN/GaN LED array. physica status solidi (a). 214(8). 1600815–1600815. 12 indexed citations
7.
Marona, Łucja, Julita Smalc‐Koziorowska, Ewa Grzanka, et al.. (2016). Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN. Semiconductor Science and Technology. 31(3). 35001–35001. 6 indexed citations
8.
Sadovyi, B., А.С. Ніколенко, J.L. Weyher, et al.. (2016). Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure. Journal of Crystal Growth. 449. 35–42. 11 indexed citations
9.
Kafar, Anna, Szymon Stańczyk, M. Sarzyński, et al.. (2016). Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate. Optics Express. 24(9). 9673–9673. 20 indexed citations
10.
Korona, K.P., M. Sarzyński, R. Czernecki, et al.. (2016). A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations. Acta Physica Polonica A. 130(5). 1209–1212. 3 indexed citations
11.
Sarzyński, M., T. Suski, R. Czernecki, et al.. (2015). Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts. Journal of Crystal Growth. 423. 28–33. 2 indexed citations
12.
Sarzyński, M., T. Suski, A. Khachapuridze, et al.. (2012). Lateral Control of Indium Content and Wavelength of III–Nitride Diode Lasers by Means of GaN Substrate Patterning. Applied Physics Express. 5(2). 21001–21001. 20 indexed citations
13.
Osuch, Tomasz, et al.. (2011). Fabrication of phase masks with variable diffraction efficiency using HEBS glass technology. Applied Optics. 50(31). 5977–5977. 9 indexed citations
14.
Łucznik, B., Tomasz Sochacki, M. Sarzyński, et al.. (2011). C‐plane bowing in free standing GaN crystals grown by HVPE on GaN‐sapphire substrates with photolithographically patterned Ti masks. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2117–2119. 8 indexed citations
15.
Perlin, P., Katarzyna Holc, M. Sarzyński, et al.. (2009). Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes. Applied Physics Letters. 95(26). 30 indexed citations
16.
Wierzbicka, A., J. Z. Domagała, M. Sarzyński, & Z. R. Żytkiewicz. (2009). Spatially resolved X‐ray diffraction as a tool for strain analysis in laterally modulated epitaxial structures. Crystal Research and Technology. 44(10). 1089–1094. 1 indexed citations
17.
Leszczyński, M., I. Grzegory, Michał Boćkowski, et al.. (2008). Secrets of GaN substrates properties for high luminousity of InGaN quantum wells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6910. 69100G–69100G. 1 indexed citations
18.
Czernecki, R., Stanisław Krukowski, G. Targowski, et al.. (2007). Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices. Applied Physics Letters. 91(23). 12 indexed citations
19.
Sarzyński, M., M. Kryśko, G. Targowski, et al.. (2006). Elimination of AlGaN epilayer cracking by spatially patterned AlN mask. Applied Physics Letters. 88(12). 23 indexed citations
20.
Leszczyński, M., I. Grzegory, P. Perlin, et al.. (2003). Bulk GaN crystals grown at high pressure as substrates for blue-laser technology. physica status solidi (a). 200(1). 9–12. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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