Tomasz Sochacki

1.5k citations

76 papers · 1.2k indexed · h-index 20

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 75
- GaN-based semiconductor devices and materials 75
Electronic, Optical and Magnetic Materials 39
- Ga2O3 and related materials 38

Co-authors: Michał Boćkowski B. Łucznik Małgorzata Iwińska Mikolaj Amilusik Robert Kucharski Mateusz Fijałkowski I. Grzegory J.L. Weyher
Journals: Journal of Crystal Growth (23 papers)Materials Science in Semiconductor Processing (5 papers)Materials (5 papers)Japanese Journal of Applied Physics (4 papers)Journal of Applied Physics (4 papers)
Partner nations: Poland Japan United States

In The Last Decade

Tomasz Sochacki

74 papers receiving 1.1k citations

Peers

Countries citing papers authored by Tomasz Sochacki

Since Specialization

Citations

This map shows the geographic impact of Tomasz Sochacki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tomasz Sochacki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tomasz Sochacki more than expected).

Fields of papers citing papers by Tomasz Sochacki

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tomasz Sochacki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tomasz Sochacki. The network helps show where Tomasz Sochacki may publish in the future.

Co-authors

The 25 scholars most cited alongside Tomasz Sochacki, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Tomasz Sochacki Line = papers co-authored together Tomasz Sochacki links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Bragg diffraction imaging characterization of crystal defects in GaN (0001) substrates: Comparison of the growth method and the seed approach Progress in Crystal Growth and Characterization of Materials ·Lutz Kirste, Thu Nhi Tran-Caliste, Tomasz Sochacki, J.L. Weyher, Patrik Straňák, Robert Kucharski, Karolina Grabiańska, J. Baruchel, Michał Boćkowski	2025	1
2	Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing Applied Surface Science ·Tomasz Sochacki, Lutz Kirste, Kacper Sierakowski, A. Jaroszynska, R. Jakieła, Michał Fijałkowski, Karolina Grabiańska, Marcin Zając, Julita Smalc Koziorowska, A. Lachowski, M. Turek, Patrik Straňák, Kensuke Sumida, Michał Boćkowski	2025	0
3	Role of carbon in n-type bulk GaN crystals Journal of Crystal Growth ·Mikolaj Amilusik, Marcin Zając, Mateusz Fijałkowski, Małgorzata Iwińska, Tomasz Sochacki, Damian Włodarczyk, Ajeesh Kumar Somakumar, R. Jakieła, A. Suchocki, Michał Boćkowski	2024	1
4	On method of estimating recombination rates by analysis of time-resolved luminescence Journal of Luminescence ·Konrad Sakowski, Łukasz Borowik, N. Rochat, Paweł Kempisty, Paweł Strąk, Natalia Majewska, Sebastian Mahlik, Kamil Koroński, Tomasz Sochacki, Jacek Piechota, Marc Fouchier, Agata Kamińska, Stanisław Krukowski	2024	2
5	Origins of Electrical Compensation in Si‐Doped HVPE GaN physica status solidi (b) ·Igor Prozheev, Małgorzata Iwińska, Tomasz Sochacki, Michał Boćkowski, René Bès, Filip Tuomisto	2023	6
6	Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN Materials ·Tomasz Sochacki, Robert Kucharski, Karolina Grabiańska, J.L. Weyher, Magdalena A. Zajac, Małgorzata Iwińska, Lutz Kirste, Michał Boćkowski	2023	4
7	Origins of Electrical Compensation in Si‐Doped HVPE GaN physica status solidi (b) ·Igor Prozheev, Małgorzata Iwińska, Tomasz Sochacki, Michał Boćkowski, René Bès, Filip Tuomisto	2023	2
8	Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed Materials ·Tomasz Sochacki, Robert Kucharski, Karolina Grabiańska, J.L. Weyher, Małgorzata Iwińska, Michał Boćkowski, Lutz Kirste	2022	3
9	Carbon and Manganese in Semi-Insulating Bulk GaN Crystals Materials ·Mikolaj Amilusik, Marcin Zając, Tomasz Sochacki, B. Łucznik, Michał Fijałkowski, Małgorzata Iwińska, Damian Włodarczyk, Ajeesh Kumar Somakumar, A. Suchocki, Michał Boćkowski	2022	10
10	Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals Materials ·Lutz Kirste, Thu Nhi Tran Caliste, J.L. Weyher, Julita Smalc‐Koziorowska, Magdalena A. Zajac, Robert Kucharski, Tomasz Sochacki, Karolina Grabiańska, Małgorzata Iwińska, C. Detlefs, A.N. Danilewsky, Michał Boćkowski, J. Baruchel	2022	6
11	On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals Crystals ·Karolina Grabiańska, Robert Kucharski, Tomasz Sochacki, J.L. Weyher, Małgorzata Iwińska, I. Grzegory, Michał Boćkowski	2022	6
12	Investigation of beryllium diffusion in HVPE-GaN grown in [11–20] and [10-10] crystallographic directions Materials Science in Semiconductor Processing ·Kacper Sierakowski, R. Jakieła, Michał Fijałkowski, Tomasz Sochacki, Małgorzata Iwińska, Paweł Kempisty, M. Turek, Michał Boćkowski	2021	8
13	Carbon complexes in highly C-doped GaN Physical review. B. ·John L. Lyons, E. R. Glaser, M. E. Zvanut, Subash Paudel, Małgorzata Iwińska, Tomasz Sochacki, Michał Boćkowski	2021	23
14	Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography Materials ·Lutz Kirste, Karolina Grabiańska, Robert Kucharski, Tomasz Sochacki, B. Łucznik, Michał Boćkowski	2021	23
15	Growth of bulk GaN crystals Journal of Applied Physics ·Robert Kucharski, Tomasz Sochacki, B. Łucznik, Michał Boćkowski	2020	97
16	Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN Applied Physics Letters ·Pegah Bagheri, Pramod Reddy, Ji Hyun Kim, Robert Rounds, Tomasz Sochacki, Ronny Kirste, Michał Boćkowski, Ramón Collazo, Zlatko Sitar	2020	12
17	Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction Journal of Crystal Growth ·Tomasz Sochacki, Slawomir Sakowski, Paweł Kempisty, Mikolaj Amilusik, Piotr Jaroszyński, Małgorzata Iwińska, Michał Boćkowski	2020	6
18	Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed Japanese Journal of Applied Physics ·Tomasz Sochacki, Sakari Sintonen, J.L. Weyher, Mikolaj Amilusik, Aneta Sidor, Michał Boćkowski	2019	6
19	Iron and manganese as dopants used in the crystallization of highly resistive HVPE-GaN on native seeds Japanese Journal of Applied Physics ·Małgorzata Iwińska, Marcin Zając, B. Łucznik, Michał Fijałkowski, Mikolaj Amilusik, Tomasz Sochacki, E. Litwin‐Staszewska, R. Piotrzkowski, I. Grzegory, Michał Boćkowski	2019	25
20	Examination of defects and the seed's critical thickness in HVPE‐GaN growth on ammonothermal GaN seed physica status solidi (b) ·Tomasz Sochacki, Mikolaj Amilusik, Michał Fijałkowski, Małgorzata Iwińska, B. Łucznik, J.L. Weyher, G. Kamler, Robert Kucharski, I. Grzegory, Michał Boćkowski	2014	26

About Tomasz Sochacki

Tomasz Sochacki is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 76 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (75 papers), Ga2O3 and related materials (38 papers), ZnO doping and properties (34 papers), Semiconductor materials and devices (19 papers), Semiconductor Quantum Structures and Devices (11 papers), Silicon Carbide Semiconductor Technologies (9 papers), Metal and Thin Film Mechanics (8 papers) and Thin-Film Transistor Technologies (7 papers). The work is most often cited by research in Condensed Matter Physics (1.0k citations), Electronic, Optical and Magnetic Materials (613 citations), Materials Chemistry (551 citations), Electrical and Electronic Engineering (512 citations) and Atomic and Molecular Physics, and Optics (229 citations). Tomasz Sochacki has collaborated with scholars based in Poland, Japan and United States. Frequent co-authors include Michał Boćkowski, B. Łucznik, Małgorzata Iwińska, Mikolaj Amilusik, Robert Kucharski, Mateusz Fijałkowski, I. Grzegory, J.L. Weyher, E. Litwin‐Staszewska and R. Piotrzkowski. Their work appears in journals such as Journal of Crystal Growth, Materials Science in Semiconductor Processing, Materials, Japanese Journal of Applied Physics and Journal of Applied Physics.

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