Dolar Khachariya

555 citations

35 papers · 399 indexed · h-index 12

Co-authors: Pramod Reddy Ramón Collazo Zlatko Sitar Seiji Mita Ronny Kirste Spyridon Pavlidis Pegah Bagheri E. Kohn
Topics: GaN-based semiconductor devices and materials (33 papers)Semiconductor materials and devices (19 papers)Ga2O3 and related materials (18 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters Journal of Applied Physics IEEE Transactions on Electron Devices
Partner nations: United States India Poland

In The Last Decade

Dolar Khachariya

34 papers receiving 386 citations

Peers

Countries citing papers authored by Dolar Khachariya

Since Specialization

Citations

This map shows the geographic impact of Dolar Khachariya's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dolar Khachariya with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dolar Khachariya more than expected).

Fields of papers citing papers by Dolar Khachariya

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dolar Khachariya. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dolar Khachariya. The network helps show where Dolar Khachariya may publish in the future.

Co-authorship network of co-authors of Dolar Khachariya

This figure shows the co-authorship network connecting the top 25 collaborators of Dolar Khachariya. A scholar is included among the top collaborators of Dolar Khachariya based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dolar Khachariya. Dolar Khachariya is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	On the origin of carrier loss in Mg-doped N-polar GaN 2025 ·Applied Physics Letters ·(unknown),Shashwat Rathkanthiwar,(unknown),Seiji Mita,Dolar Khachariya,Pramod Reddy,Ronny Kirste,Ramón Collazo,Zlatko Sitar	0
2	High-current, high-voltage AlN Schottky barrier diodes 2024 ·Applied Physics Express ·(unknown),Dolar Khachariya,Pramod Reddy,Seiji Mita,(unknown),Pegah Bagheri,Shashwat Rathkanthiwar,Ronny Kirste,Spyridon Pavlidis,E. Kohn,Ramón Collazo,Zlatko Sitar	7
3	Anderson transition in compositionally graded p-AlGaN 2023 ·Journal of Applied Physics ·Shashwat Rathkanthiwar,Pramod Reddy,(unknown),(unknown),(unknown),Pegah Bagheri,Dolar Khachariya,(unknown),Baxter Moody,Seiji Mita,Ronny Kirste,Ramón Collazo,Zlatko Sitar	3
4	High p-conductivity in AlGaN enabled by polarization field engineering 2023 ·Applied Physics Letters ·Shashwat Rathkanthiwar,Pramod Reddy,Baxter Moody,(unknown),Pegah Bagheri,Dolar Khachariya,Rafael Dalmau,Seiji Mita,Ronny Kirste,Ramón Collazo,Zlatko Sitar	6
5	Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor 2023 ·Applied Physics Express ·(unknown),Dolar Khachariya,Seiji Mita,M. Hayden Breckenridge,James Tweedie,Pramod Reddy,Kacper Sierakowski,G. Kamler,Michał Boćkowski,E. Kohn,Zlatko Sitar,Ramón Collazo,Spyridon Pavlidis	5
6	High conductivity and low activation energy in p-type AlGaN 2023 ·Applied Physics Letters ·Shashwat Rathkanthiwar,Pegah Bagheri,Dolar Khachariya,Seiji Mita,(unknown),Yan Guan,Baxter Moody,Pramod Reddy,Ronny Kirste,Ramón Collazo,Zlatko Sitar	9
7	Doping and compensation in heavily Mg doped Al-rich AlGaN films 2022 ·Applied Physics Letters ·Pegah Bagheri,Andrew Klump,Shun Washiyama,M. Hayden Breckenridge,(unknown),Yan Guan,Dolar Khachariya,(unknown),Biplab Sarkar,Shashwat Rathkanthiwar,Pramod Reddy,Seiji Mita,Ronny Kirste,Ramón Collazo,Zlatko Sitar	24
8	Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices 2022 ·Applied Physics Express ·Shashwat Rathkanthiwar,Pegah Bagheri,Dolar Khachariya,Seiji Mita,Spyridon Pavlidis,Pramod Reddy,Ronny Kirste,James Tweedie,Zlatko Sitar,Ramón Collazo	8
9	Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates 2022 ·physica status solidi (RRL) - Rapid Research Letters ·Pramod Reddy,Will Mecouch,M. Hayden Breckenridge,Dolar Khachariya,Pegah Bagheri,Ji Hyun Kim,Yan Guan,Seiji Mita,Baxter Moody,James Tweedie,Spyridon Pavlidis,Ronny Kirste,E. Kohn,Ramón Collazo,Zlatko Sitar	9
10	Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates 2022 ·Applied Physics Letters ·Dolar Khachariya,Seiji Mita,Pramod Reddy,(unknown),J. Houston Dycus,Pegah Bagheri,M. Hayden Breckenridge,(unknown),Shashwat Rathkanthiwar,Ronny Kirste,E. Kohn,Zlatko Sitar,Ramón Collazo,Spyridon Pavlidis	30
11	On the Ge shallow-to-deep level transition in Al-rich AlGaN 2021 ·Journal of Applied Physics ·Pegah Bagheri,Pramod Reddy,Seiji Mita,Dennis Szymanski,(unknown),Yan Guan,Dolar Khachariya,Andrew Klump,Spyridon Pavlidis,Ronny Kirste,Ramón Collazo,Zlatko Sitar	7
12	Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN 2021 ·Applied Physics Letters ·Pramod Reddy,Dolar Khachariya,Will Mecouch,M. Hayden Breckenridge,Pegah Bagheri,Yan Guan,(unknown),Spyridon Pavlidis,Ronny Kirste,Seiji Mita,E. Kohn,Ramón Collazo,Zlatko Sitar	17
13	On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers 2021 ·Applied Physics Letters ·Dolar Khachariya,Dennis Szymanski,M. Hayden Breckenridge,Pramod Reddy,E. Kohn,Zlatko Sitar,Ramón Collazo,Spyridon Pavlidis	6
14	On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters 2021 ·Semiconductor Science and Technology ·(unknown),Pegah Bagheri,Andrew Klump,Dolar Khachariya,Seiji Mita,Pramod Reddy,Shashwat Rathkanthiwar,Ronny Kirste,Ramón Collazo,Zlatko Sitar,Biplab Sarkar	7
15	High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN 2021 ·Applied Physics Letters ·M. Hayden Breckenridge,Pegah Bagheri,Qiang Guo,Biplab Sarkar,Dolar Khachariya,Spyridon Pavlidis,James Tweedie,Ronny Kirste,Seiji Mita,Pramod Reddy,Ramón Collazo,Zlatko Sitar	28
16	High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates 2020 ·Applied Physics Letters ·Pramod Reddy,M. Hayden Breckenridge,Qiang Guo,Andrew Klump,Dolar Khachariya,Spyridon Pavlidis,Will Mecouch,Seiji Mita,Baxter Moody,James Tweedie,Ronny Kirste,E. Kohn,Ramón Collazo,Zlatko Sitar	41
17	Role of polarity in SiN on Al/GaN and the pathway to stable contacts 2020 ·Semiconductor Science and Technology ·Pramod Reddy,Dolar Khachariya,Dennis Szymanski,M. Hayden Breckenridge,Biplab Sarkar,Spyridon Pavlidis,Ramón Collazo,Zlatko Sitar,E. Kohn	9
18	(Invited) A Path Toward Vertical GaN Superjunction Devices 2020 ·ECS Transactions ·Dolar Khachariya,Dennis Szymanski,Pramod Reddy,E. Kohn,Zlatko Sitar,Ramón Collazo,Spyridon Pavlidis	7
19	Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN 2020 ·Journal of Applied Physics ·Dolar Khachariya,Dennis Szymanski,(unknown),Pramod Reddy,E. Kohn,Zlatko Sitar,Ramón Collazo,Spyridon Pavlidis	12
20	Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation 2015 ·physica status solidi (b) ·(unknown),Mudassar Meer,(unknown),Dolar Khachariya,(unknown),Debashree Banerjee,Swaroop Ganguly,Apurba Laha,Dipankar Saha	9

About Dolar Khachariya

Dolar Khachariya is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 35 papers that have together received 399 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (19 papers) and Ga2O3 and related materials (18 papers). The work is most often cited by research in Condensed Matter Physics (362 citations), Electronic, Optical and Magnetic Materials (209 citations) and Electrical and Electronic Engineering (184 citations). Dolar Khachariya has collaborated with scholars based in United States, India and Poland. Frequent co-authors include Pramod Reddy, Ramón Collazo, Zlatko Sitar, Seiji Mita, Ronny Kirste, Spyridon Pavlidis, Pegah Bagheri, E. Kohn, James Tweedie and M. Hayden Breckenridge. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

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