J. Mittereder

799 total citations
42 papers, 654 citations indexed

About

J. Mittereder is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, J. Mittereder has authored 42 papers receiving a total of 654 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 23 papers in Condensed Matter Physics. Recurrent topics in J. Mittereder's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (17 papers) and Semiconductor Quantum Structures and Devices (15 papers). J. Mittereder is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (17 papers) and Semiconductor Quantum Structures and Devices (15 papers). J. Mittereder collaborates with scholars based in United States, South Korea and Australia. J. Mittereder's co-authors include S.C. Binari, J.A. Roussos, David F. Storm, D. S. Katzer, Mulpuri V. Rao, N. A. Papanicolaou, Andrew Edwards, W.T. Anderson, Robert B. Bass and M. Fatemi and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Mittereder

40 papers receiving 625 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Mittereder United States 16 499 395 241 158 141 42 654
Desirée Queren Germany 12 269 0.5× 451 1.1× 408 1.7× 116 0.7× 100 0.7× 21 578
C. Dua France 16 784 1.6× 766 1.9× 248 1.0× 240 1.5× 134 1.0× 63 977
Tso-Min Chou United States 8 452 0.9× 382 1.0× 168 0.7× 91 0.6× 141 1.0× 14 540
Benny Van Daele Belgium 13 338 0.7× 342 0.9× 193 0.8× 168 1.1× 181 1.3× 35 572
C. H. Carter United States 12 465 0.9× 241 0.6× 218 0.9× 97 0.6× 85 0.6× 15 574
S. I. Troshkov Russia 11 308 0.6× 160 0.4× 247 1.0× 81 0.5× 105 0.7× 74 441
S. Kijima Japan 11 382 0.8× 360 0.9× 381 1.6× 79 0.5× 198 1.4× 27 606
B.T. Hughes United Kingdom 8 439 0.9× 490 1.2× 189 0.8× 80 0.5× 203 1.4× 16 607
I. C. Robin France 14 322 0.6× 152 0.4× 233 1.0× 116 0.7× 317 2.2× 39 518
K. G. Irvine United States 15 966 1.9× 338 0.9× 363 1.5× 175 1.1× 122 0.9× 35 1.1k

Countries citing papers authored by J. Mittereder

Since Specialization
Citations

This map shows the geographic impact of J. Mittereder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Mittereder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Mittereder more than expected).

Fields of papers citing papers by J. Mittereder

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Mittereder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Mittereder. The network helps show where J. Mittereder may publish in the future.

Co-authorship network of co-authors of J. Mittereder

This figure shows the co-authorship network connecting the top 25 collaborators of J. Mittereder. A scholar is included among the top collaborators of J. Mittereder based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Mittereder. J. Mittereder is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Maximenko, Sergey I., Jesse A. Frantz, Robel Y. Bekele, et al.. (2014). Optimization of electrical performance of Cu(In,Ga)Se<inf>2</inf> thin film solar cells sputtered from quaternary targets. 1704–1706. 1 indexed citations
2.
Mittereder, J., et al.. (2008). RF Arrhenius life testing of X-band GaN HEMITs. 195–196. 1 indexed citations
3.
Storm, David F., D. S. Katzer, J.A. Roussos, et al.. (2007). AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization. Journal of Crystal Growth. 301-302. 429–433. 30 indexed citations
4.
Kim, Jihyun, J. A. Freitas, J. Mittereder, et al.. (2006). Micro-Raman Studies of Thermal Stress Effects in GaN Heteroepitaxial Layers and Self-heating Effects in AlGaN/GaN HEMT Structures. ECS Meeting Abstracts. MA2005-02(18). 709–709. 1 indexed citations
5.
Katzer, D. S., J. Mittereder, Steven C. Binari, David F. Storm, & J.A. Roussos. (2006). The Influence of Device Processing on GaN HEMT Reliability. ECS Meeting Abstracts. MA2006-02(32). 1544–1544.
6.
Katzer, D. S., J. Mittereder, Steven C. Binari, et al.. (2006). Study of the Impact of Electron Traps on GaN HEMT Reliability. ECS Transactions. 3(5). 151–160. 1 indexed citations
7.
Anderson, W.T., J. Mittereder, & J.A. Roussos. (2003). Channel temperature measurement of GaAs devices using an atomic force microscope. 3–9. 3 indexed citations
8.
Klein, P. B., J. Mittereder, S.C. Binari, et al.. (2003). Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy. Electronics Letters. 39(18). 1354–1356. 7 indexed citations
9.
Mittereder, J., S.C. Binari, P. B. Klein, et al.. (2003). Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress. Applied Physics Letters. 83(8). 1650–1652. 66 indexed citations
10.
Buot, F. A., J. Mittereder, W.T. Anderson, & D.E. Ioannou. (2002). Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices. Solid-State Electronics. 46(1). 123–131. 3 indexed citations
11.
Ikossi, K., et al.. (2002). Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb. Solid-State Electronics. 46(10). 1627–1631. 19 indexed citations
12.
Boos, J.B., et al.. (2002). AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability. Solid-State Electronics. 47(2). 181–184. 7 indexed citations
13.
Mittereder, J., et al.. (2002). Comparison of statistical distributions for the analysis of GaAs MMIC life test data. jep 118. 54–61. 1 indexed citations
14.
Mittereder, J., J.A. Roussos, W.T. Anderson, & Dimitris E. Ioannou. (2002). Quantitative measurement of channel temperature of GaAs devices for reliable life-time prediction. IEEE Transactions on Reliability. 51(4). 482–485. 10 indexed citations
15.
Boos, J.B., W. Kruppa, Bálint Molnár, et al.. (2002). Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs. 354–357. 3 indexed citations
16.
Papanicolaou, N. A., Andrew Edwards, Mulpuri V. Rao, J. Mittereder, & W.T. Anderson. (2000). Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN. Journal of Applied Physics. 87(1). 380–386. 24 indexed citations
17.
Boos, J.B., B. R. Bennett, W. Kruppa, et al.. (1999). Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1022–1027. 34 indexed citations
18.
Rao, Mulpuri V., Keith Jones, Michael A. Derenge, et al.. (1999). Effectiveness of AlN encapsulant in annealing ion-implanted SiC. Journal of Applied Physics. 86(2). 746–751. 35 indexed citations
19.
Rao, Mulpuri V., Jesse B. Tucker, M. C. Ridgway, et al.. (1999). Ion-implantation in bulk semi-insulating 4H–SiC. Journal of Applied Physics. 86(2). 752–758. 49 indexed citations
20.
Kyono, C. S., et al.. (1995). Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 13(1). 1–3. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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