Paul Healey

682 total citations
8 papers, 493 citations indexed

About

Paul Healey is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Paul Healey has authored 8 papers receiving a total of 493 indexed citations (citations by other indexed papers that have themselves been cited), including 6 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 2 papers in Condensed Matter Physics. Recurrent topics in Paul Healey's work include Graphene research and applications (3 papers), Quantum Dots Synthesis And Properties (2 papers) and Semiconductor Quantum Structures and Devices (2 papers). Paul Healey is often cited by papers focused on Graphene research and applications (3 papers), Quantum Dots Synthesis And Properties (2 papers) and Semiconductor Quantum Structures and Devices (2 papers). Paul Healey collaborates with scholars based in United States, France and Germany. Paul Healey's co-authors include P.W. Wyatt, C.L. Keast, J. Kedzierski, Pei-Lan Hsu, Mike Sprinkle, Claire Berger, Walt A. de Heer, Steven A. Vitale, J.A. Schaefer and Jing Kong and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Nanotechnology.

In The Last Decade

Paul Healey

8 papers receiving 477 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Paul Healey United States	6	380	301	117	97	51	8	493
Zachary Hughes United States	6	583 1.5×	389 1.3×	146 1.2×	122 1.3×	47 0.9×	9	635
Amit Gahoi Germany	10	499 1.3×	335 1.1×	185 1.6×	125 1.3×	57 1.1×	18	571
Xugang Xiong United States	11	160 0.4×	190 0.6×	187 1.6×	82 0.8×	40 0.8×	18	367
Jerzy Rużyłło United States	11	324 0.9×	422 1.4×	90 0.8×	73 0.8×	43 0.8×	56	518
Jing-Ping Xu China	17	353 0.9×	670 2.2×	87 0.7×	92 0.9×	56 1.1×	108	762
Caifu Zeng United States	10	383 1.0×	280 0.9×	103 0.9×	113 1.2×	60 1.2×	12	471
D. Weissenberger Germany	7	299 0.8×	216 0.7×	181 1.5×	142 1.5×	95 1.9×	8	442
Wan Don Kim South Korea	7	375 1.0×	345 1.1×	87 0.7×	32 0.3×	71 1.4×	15	446
Ongi Englander United States	7	197 0.5×	144 0.5×	207 1.8×	90 0.9×	20 0.4×	16	336
Hemanth Jagannathan United States	12	147 0.4×	413 1.4×	161 1.4×	90 0.9×	27 0.5×	34	473

Countries citing papers authored by Paul Healey

Since Specialization

Citations

This map shows the geographic impact of Paul Healey's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Paul Healey with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Paul Healey more than expected).

Fields of papers citing papers by Paul Healey

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Paul Healey. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Paul Healey. The network helps show where Paul Healey may publish in the future.

Co-authorship network of co-authors of Paul Healey

This figure shows the co-authorship network connecting the top 25 collaborators of Paul Healey. A scholar is included among the top collaborators of Paul Healey based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Paul Healey. Paul Healey is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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8 of 8 papers shown

1.

Vitale, Steven A., J. Kedzierski, Paul Healey, P.W. Wyatt, & C.L. Keast. (2010). Work-Function-Tuned TiN Metal Gate FDSOI Transistors for Subthreshold Operation. IEEE Transactions on Electron Devices. 58(2). 419–426. 101 indexed citations

2.

Thiele, Stefan, Alfonso Reina, Paul Healey, et al.. (2009). Engineering polycrystalline Ni films to improve thickness uniformity of the chemical-vapor-deposition-grown graphene films. Nanotechnology. 21(1). 15601–15601. 84 indexed citations

3.

Kedzierski, J., Pei-Lan Hsu, Paul Healey, P.W. Wyatt, & C.L. Keast. (2008). Epitaxial graphene transistors on SiC substrates. 98. 25–26. 6 indexed citations

4.

Kedzierski, J., Pei-Lan Hsu, Paul Healey, et al.. (2008). Epitaxial Graphene Transistors on SiC Substrates. IEEE Transactions on Electron Devices. 55(8). 2078–2085. 283 indexed citations

5.

Chen, C.K., P.W. Wyatt, J.M. Knecht, et al.. (2007). Fully Depleted SOI RF Switch with Dynamic Biasing. 13. 175–178. 7 indexed citations

6.

Gokhale, M. R., et al.. (1996). Factors influencing low-temperature photo-assisted OMVPE growth of ZnSe. Journal of Crystal Growth. 165(1-2). 25–30. 7 indexed citations

7.

Gokhale, M. R., et al.. (1996). Role of cadmium in enhancing optical properties and chlorine doping of photo-assisted OMVPE-grown znse. Journal of Electronic Materials. 25(2). 207–212. 1 indexed citations

8.

Healey, Paul, et al.. (1995). Properties of vapor phase epitaxial zinc selenide codoped with cadmium and chlorine. Applied Physics Letters. 67(8). 1098–1100. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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