Brad J. Burrow

772 total citations
12 papers, 668 citations indexed

About

Brad J. Burrow is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanics of Materials. According to data from OpenAlex, Brad J. Burrow has authored 12 papers receiving a total of 668 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 5 papers in Mechanics of Materials. Recurrent topics in Brad J. Burrow's work include Semiconductor materials and devices (7 papers), Semiconductor materials and interfaces (6 papers) and Metal and Thin Film Mechanics (5 papers). Brad J. Burrow is often cited by papers focused on Semiconductor materials and devices (7 papers), Semiconductor materials and interfaces (6 papers) and Metal and Thin Film Mechanics (5 papers). Brad J. Burrow collaborates with scholars based in United States, Netherlands and Finland. Brad J. Burrow's co-authors include A. E. Morgan, Ivo J. Raaijmakers, Ki‐Bum Kim, Shiqing Wang, E. K. Broadbent, Shi‐Qing Wang, D. K. Sadana, M. Delfino, Neal R. Armstrong and Kenneth W. Nebesny and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Surface Science.

In The Last Decade

Brad J. Burrow

12 papers receiving 632 citations

Peers

Brad J. Burrow
E. K. Broadbent United States
Mao‐Chieh Chen Taiwan
C. Y. Ting United States
F. B. Alexander United States
Steven C. Seel United States
K. P. Rodbell United States
P. M. Fryer United States
Marc‐A. Nicolet United States
Atsushi Noya Japan
E. Sakuma Poland
E. K. Broadbent United States
Brad J. Burrow
Citations per year, relative to Brad J. Burrow Brad J. Burrow (= 1×) peers E. K. Broadbent

Countries citing papers authored by Brad J. Burrow

Since Specialization
Citations

This map shows the geographic impact of Brad J. Burrow's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Brad J. Burrow with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Brad J. Burrow more than expected).

Fields of papers citing papers by Brad J. Burrow

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Brad J. Burrow. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Brad J. Burrow. The network helps show where Brad J. Burrow may publish in the future.

Co-authorship network of co-authors of Brad J. Burrow

This figure shows the co-authorship network connecting the top 25 collaborators of Brad J. Burrow. A scholar is included among the top collaborators of Brad J. Burrow based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Brad J. Burrow. Brad J. Burrow is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Wang, Shi‐Qing, et al.. (1993). Diffusion barrier properties of TiW between Si and Cu. Journal of Applied Physics. 73(5). 2301–2320. 127 indexed citations
2.
Wang, Shiqing, et al.. (1990). Reactively sputtered TiN as a diffusion barrier between Cu and Si. Journal of Applied Physics. 68(10). 5176–5187. 214 indexed citations
3.
Raaijmakers, Ivo J., et al.. (1990). A Phase Diagram Approach for Predicting Reactions in Al/TiW(-Nitride) Thin-Film Systems. MRS Proceedings. 187. 1 indexed citations
4.
Raaijmakers, Ivo J., et al.. (1990). Microstructure and barrier properties of reactively sputtered Ti-W nitride. Journal of Electronic Materials. 19(11). 1221–1230. 22 indexed citations
5.
Morgan, A. E., et al.. (1988). Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing. Journal of Applied Physics. 64(1). 344–353. 106 indexed citations
6.
Broadbent, E. K., et al.. (1988). The high-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon. Journal of Applied Physics. 64(12). 6721–6726. 4 indexed citations
7.
Burrow, Brad J., et al.. (1986). A correlation of Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and Rutherford backscattering spectrometry measurements on sputter‐deposited titanium nitride thin films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(6). 2463–2469. 110 indexed citations
8.
Broadbent, E. K., et al.. (1986). Growth of Selective Tungsten on Self‐Aligned Ti and PtNi Silicides by Low Pressure Chemical Vapor Deposition. Journal of The Electrochemical Society. 133(8). 1715–1721. 19 indexed citations
9.
Nebesny, Kenneth W., Kevin R. Zavadil, Brad J. Burrow, & Neal R. Armstrong. (1985). Reactions of clean lithium surfaces with SO2, O2 and H2O; auger lineshape analysis and X-ray photoelectron spectroscopic analysis of the initial product layers. Surface Science. 162(1-3). 292–297. 14 indexed citations
10.
Delfino, M., et al.. (1985). Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium. IEEE Electron Device Letters. 6(11). 591–593. 38 indexed citations
11.
Burrow, Brad J., et al.. (1984). Quantitative Auger electron spectroscopy and Rutherford backscattering of potassium-implanted silicon, silica and sodium trisilicate. Applications of Surface Science. 20(1-2). 167–180. 4 indexed citations
12.
Burrow, Brad J., et al.. (1981). Characterization of the Materials Comprising the Reactive Interfaces in the Li ( Si )  / FeS2 Primary Battery. Journal of The Electrochemical Society. 128(9). 1919–1926. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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