J. O. Olowolafe

1.9k citations

44 papers · 1.7k indexed · h-index 21

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 18
Electronic, Optical and Magnetic Materials top 5%
- Copper Interconnects and Reliability 11
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 16
- Silicon and Solar Cell Technologies 6
- Silicon Carbide Semiconductor Technologies 5
Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 6
Mechanics of Materials top 5%
- Metal and Thin Film Mechanics 11
Mechanical Engineering
- Intermetallics and Advanced Alloy Properties 7

Co-authors: J. W. Mayer M.−A. Nicolet C. J. Mogab R. B. Gregory K. N. Tu J. Kolodzey A. C. Campbell Robert E. Jones
Cited by: Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (11 papers)Journal of Applied Physics (9 papers)Journal of The Electrochemical Society (1 paper)
Partner nations: United States Nigeria Italy

In The Last Decade

J. O. Olowolafe

44 papers receiving 1.6k citations

Peers

Countries citing papers authored by J. O. Olowolafe

Since Specialization

Citations

This map shows the geographic impact of J. O. Olowolafe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. O. Olowolafe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. O. Olowolafe more than expected).

Fields of papers citing papers by J. O. Olowolafe

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. O. Olowolafe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. O. Olowolafe. The network helps show where J. O. Olowolafe may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. O. Olowolafe, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. O. Olowolafe Line = papers co-authored together J. O. Olowolafe links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Thermal and electrical properties of Au/B4C, Ni/B4C, and Ta/Si contacts to silicon carbide Thin Solid Films ·J. O. Olowolafe,J. S. Solomon,W. C. Mitchel,W. V. Lampert	2004	14
2	Preparation and optical characterization of MOCVD ZnCdInS thin films Optical Materials ·A. Victor Adedeji,Marcus Adebola Eleruja,I. A. O. Ojo,A Djebah,O. Osasona,J. O. Olowolafe,J. B. Aladekomo,E.O.B. Ajayi	2000	8
3	Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon IEEE Transactions on Electron Devices ·J. Kolodzey,Enam Chowdhury,Thomas Adam,G. Qui,Ileana Rău,J. O. Olowolafe,John S. Suehle,Yuan Chen	2000	173
4	Preparation and characterization of MOCVD thin films of indium tin oxide Optical Materials ·Olumide Oluwole Akinwunmi,Marcus Adebola Eleruja,J. O. Olowolafe,G. A. Adegboyega,E.O.B. Ajayi	1999	20
5	The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films Journal of Electronic Materials ·J. O. Olowolafe,Ileana Rău,K. M. Unruh,C.P. Swann,Z.S Jawad,T. L. Alford	1999	2
6	Analysis of high-temperature materials for application to electric weapon technology IEEE Transactions on Magnetics ·G.L. Katulka,J. Kolodzey,J. O. Olowolafe	1999	14
7	Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering Applied Physics Letters ·Peng Tao,Joachim Piprek,Guohua Qiu,J. O. Olowolafe,K. M. Unruh,C.P. Swann,E. Fred Schubert	1997	101
8	Low-Temperature Deposition and Characterization of Al_xIn_1-xN Thin Films MRS Proceedings ·Guohua Qiu,J. O. Olowolafe,Peng Tao,K. M. Unruh,C.P. Swann,Joachim Piprek	1996	1
9	Band gap of Ge rich Si1−x−yGexCy alloys Applied Physics Letters ·B. A. Orner,J. O. Olowolafe,K. Roe,J. Kolodzey,Thomas Laursen,J. W. Mayer,J. Spear	1996	18
10	Intermetallic Compound Formation in Ti/Al Alloy Thin Film Couples and Its Role in Electromigration Lifetime Journal of The Electrochemical Society ·D. Jawarani,J. P. Stark,H. Kawasaki,J. O. Olowolafe,C. C. Lee,J. Klein,F. Pintchovski	1994	14
11	<title>Ti-thickness-dependent electromigration resistance for Ti/Al-Cu-Si metallization with and without barrier rapid-thermal-anneal in an ammonia ambient</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Kuan Y. Fu,H. Kawasaki,J. O. Olowolafe,Ronald E. Pyle	1993	7
12	Effect of interface layer on the microstructure and electromigration resistance of Al-Si-Cu alloy on TiN/Ti substrates Applied Physics Letters ·J. O. Olowolafe,H. Kawasaki,C. C. Lee,J. Klein,F. Pintchovski,D. Jawarani	1993	6
13	Thermal stability of coevaporated Al-Pt thin films on GaAs substrates Applied Physics Letters ·Bart Blanpain,G. D. Wilk,J. O. Olowolafe,J. W. Mayer,L. R. Zheng	1990	9
14	Interaction of Cu with CoSi2 with and without TiNx barrier layers Applied Physics Letters ·J. O. Olowolafe,Jian Li,Bart Blanpain,J. W. Mayer	1990	15
15	Interfacial reaction of Mo-W alloys with silicon Thin Solid Films ·J. O. Olowolafe,E. G. Colgan,Chris J. Palmstr�m,J. W. Mayer	1986	10
16	Al/TiW reaction kinetics: Influence of Cu and interface oxides Journal of Applied Physics ·J. O. Olowolafe,C. J. Palmstro m,E. G. Colgan,J. W. Mayer	1985	23
17	Contact reactions in Pd/GaAs junctions Journal of Applied Physics ·J. O. Olowolafe,P Shing Ho,H.J. Hovel,John E. Lewis,J. M. Woodall	1979	47
18	Chromium thin film as a barrier to the interaction of Pd2Si with Al Solid-State Electronics ·J. O. Olowolafe,M‐A. Nicolet,J. W. Mayer	1977	17
19	Influence of the nature of the Si substrate on nickel silicide formed from thin Ni films Thin Solid Films ·J. O. Olowolafe,M.−A. Nicolet,J. W. Mayer	1976	159
20	Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer Journal of Applied Physics ·J. O. Olowolafe,M‐A. Nicolet,J. W. Mayer	1976	66

About J. O. Olowolafe

J. O. Olowolafe is a scholar working on Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering, having authored 44 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (18 papers), Semiconductor materials and devices (16 papers), Metal and Thin Film Mechanics (11 papers), Copper Interconnects and Reliability (11 papers), Intermetallics and Advanced Alloy Properties (7 papers), Silicon and Solar Cell Technologies (6 papers), GaN-based semiconductor devices and materials (6 papers) and Silicon Carbide Semiconductor Technologies (5 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (820 citations), Electronic, Optical and Magnetic Materials (419 citations) and Electrical and Electronic Engineering (1.1k citations). J. O. Olowolafe has collaborated with scholars based in United States, Nigeria and Italy. Frequent co-authors include J. W. Mayer, M.−A. Nicolet, C. J. Mogab, R. B. Gregory, K. N. Tu, J. Kolodzey, A. C. Campbell, Robert E. Jones, E. G. Colgan and Ileana Rău. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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