E. K. Broadbent

975 total citations
30 papers, 761 citations indexed

About

E. K. Broadbent is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, E. K. Broadbent has authored 30 papers receiving a total of 761 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in E. K. Broadbent's work include Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (15 papers) and Copper Interconnects and Reliability (11 papers). E. K. Broadbent is often cited by papers focused on Semiconductor materials and interfaces (15 papers), Semiconductor materials and devices (15 papers) and Copper Interconnects and Reliability (11 papers). E. K. Broadbent collaborates with scholars based in United States, Finland and Netherlands. E. K. Broadbent's co-authors include Chuck Ramiller, A. E. Morgan, D. K. Sadana, Brad J. Burrow, M. Delfino, W. T. Stacy, Pauline Maillot, Robert L. Jackson, A. H. Reader and H. A. Vander Plas and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

E. K. Broadbent

28 papers receiving 685 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. K. Broadbent United States 15 551 341 256 224 166 30 761
C. Y. Ting United States 17 834 1.5× 542 1.6× 346 1.4× 220 1.0× 266 1.6× 32 1.1k
Brad J. Burrow United States 9 490 0.9× 234 0.7× 307 1.2× 285 1.3× 134 0.8× 12 668
K. P. Rodbell United States 13 682 1.2× 180 0.5× 290 1.1× 633 2.8× 205 1.2× 32 950
M-A. Nicolet United States 18 506 0.9× 429 1.3× 140 0.5× 132 0.6× 255 1.5× 27 827
Tohru Hara Japan 17 748 1.4× 338 1.0× 191 0.7× 299 1.3× 262 1.6× 110 992
Paul R. Besser United States 18 719 1.3× 195 0.6× 257 1.0× 523 2.3× 149 0.9× 68 903
J. M. Molarius Finland 14 458 0.8× 130 0.4× 526 2.1× 232 1.0× 392 2.4× 46 816
Karen Holloway United States 9 769 1.4× 528 1.5× 309 1.2× 507 2.3× 279 1.7× 17 1.1k
D. Gupta United States 18 442 0.8× 252 0.7× 107 0.4× 304 1.4× 409 2.5× 39 916
J. Greggi United States 14 347 0.6× 246 0.7× 90 0.4× 74 0.3× 276 1.7× 38 657

Countries citing papers authored by E. K. Broadbent

Since Specialization
Citations

This map shows the geographic impact of E. K. Broadbent's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. K. Broadbent with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. K. Broadbent more than expected).

Fields of papers citing papers by E. K. Broadbent

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. K. Broadbent. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. K. Broadbent. The network helps show where E. K. Broadbent may publish in the future.

Co-authorship network of co-authors of E. K. Broadbent

This figure shows the co-authorship network connecting the top 25 collaborators of E. K. Broadbent. A scholar is included among the top collaborators of E. K. Broadbent based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. K. Broadbent. E. K. Broadbent is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jackson, Robert L., et al.. (2003). Optimization of damascene feature fill for copper electroplating process. 284–286. 7 indexed citations
2.
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4.
Broadbent, E. K., et al.. (1999). Experimental and analytical study of seed layer resistance for copper damascene electroplating. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(6). 2584–2595. 21 indexed citations
5.
Raaijmakers, Ivo J., et al.. (1992). MOCVD-TiN Barrier Layers for ULSI Applications. MRS Proceedings. 260. 5 indexed citations
6.
Morgan, A. E., et al.. (1990). Formation and high-temperature stability of CoSix films on an SiO2 substrate. Journal of Applied Physics. 67(10). 6265–6268. 14 indexed citations
7.
Broadbent, E. K., et al.. (1989). Application of self-aligned CoSi/sub 2/ interconnection in submicrometer CMOS transistors. IEEE Transactions on Electron Devices. 36(11). 2440–2446. 22 indexed citations
8.
Delfino, M., A. E. Morgan, Pauline Maillot, & E. K. Broadbent. (1988). Range distributions of 11B+ in Co, CoSi2, Ti, and TiSi2. Journal of Applied Physics. 64(2). 607–609. 9 indexed citations
9.
Broadbent, E. K., et al.. (1988). High-density high-reliability tungsten interconnection by filled interconnect groove metallization. IEEE Transactions on Electron Devices. 35(7). 952–956. 14 indexed citations
10.
Broadbent, E. K. & R.S. Blewer. (1987). Tungsten and other refractory metals for VLSI applications II : proceedings of the 1986 workshop held November 12-14, 1986, Palo Alto, California, U.S.A.. 1 indexed citations
11.
Broadbent, E. K., et al.. (1987). Characterization of titanium silicide films formed by composite sputtering and rapid thermal annealing. Thin Solid Films. 151(1). 51–63. 5 indexed citations
12.
Broadbent, E. K.. (1987). Tungsten and other refractory metals for VLSI applications II. 42 indexed citations
13.
Morgan, A. E., et al.. (1987). Characterization of a Self‐Aligned Cobalt Silicide Process. Journal of The Electrochemical Society. 134(4). 925–935. 84 indexed citations
14.
Broadbent, E. K., M. Delfino, A. E. Morgan, D. K. Sadana, & Pauline Maillot. (1987). Self-aligned silicided (PtSi and CoSi2) ultra-shallow p+/n junctions. IEEE Electron Device Letters. 8(7). 318–320. 16 indexed citations
15.
Broadbent, E. K., et al.. (1986). Growth of Selective Tungsten on Self‐Aligned Ti and PtNi Silicides by Low Pressure Chemical Vapor Deposition. Journal of The Electrochemical Society. 133(8). 1715–1721. 19 indexed citations
16.
Morgan, A. E., E. K. Broadbent, & D. K. Sadana. (1986). Reaction of titanium with silicon nitride under rapid thermal annealing. Applied Physics Letters. 49(19). 1236–1238. 24 indexed citations
17.
Morgan, A. E., E. K. Broadbent, & A. H. Reader. (1985). Formation of Titanium Nitride/Silicide Bilayers by Rapid Thermal Anneal in Nitrogen. MRS Proceedings. 52. 15 indexed citations
18.
Stacy, W. T., et al.. (1985). Interfacial Structure of Tungsten Layers Formed by Selective Low Pressure Chemical Vapor Deposition. Journal of The Electrochemical Society. 132(2). 444–448. 44 indexed citations
19.
Delfino, M., et al.. (1985). Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium. IEEE Electron Device Letters. 6(11). 591–593. 38 indexed citations
20.
Broadbent, E. K. & Chuck Ramiller. (1984). Selective Low Pressure Chemical Vapor Deposition of Tungsten. Journal of The Electrochemical Society. 131(6). 1427–1433. 175 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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