G. Ottaviani

7.0k total citations · 3 hit papers
122 papers, 5.5k citations indexed

About

G. Ottaviani is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Ottaviani has authored 122 papers receiving a total of 5.5k indexed citations (citations by other indexed papers that have themselves been cited), including 96 papers in Electrical and Electronic Engineering, 70 papers in Atomic and Molecular Physics, and Optics and 36 papers in Materials Chemistry. Recurrent topics in G. Ottaviani's work include Silicon and Solar Cell Technologies (55 papers), Semiconductor materials and interfaces (51 papers) and Semiconductor materials and devices (28 papers). G. Ottaviani is often cited by papers focused on Silicon and Solar Cell Technologies (55 papers), Semiconductor materials and interfaces (51 papers) and Semiconductor materials and devices (28 papers). G. Ottaviani collaborates with scholars based in Italy, United States and Switzerland. G. Ottaviani's co-authors include C. Canali, A. Alberigi Quaranta, Carlo Jacoboni, F. Nava, G. Majni, R. Minder, J. W. Mayer, K. N. Tu, A. Alberigi-Quaranta and Claudio Canali and has published in prestigious journals such as Science, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

G. Ottaviani

122 papers receiving 5.1k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

A review of some charge transport properties of silicon

1977 817 citations Carlo Jacoboni, C. Canali et al. profile →
Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

1975 441 citations C. Canali, G. Majni et al. profile →
Electron drift velocity in silicon

1975 374 citations C. Canali, Carlo Jacoboni et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
G. Ottaviani	4.0k	2.6k	1.5k	645	463	122	5.5k
F. Nava	3.0k 0.7×	1.7k 0.7×	1.2k 0.8×	271 0.4×	217 0.5×	137	4.1k
A. G. Cullis	3.6k 0.9×	3.4k 1.3×	1.8k 1.2×	833 1.3×	156 0.3×	160	5.9k
J. C. Bourgoin	4.8k 1.2×	3.1k 1.2×	1.9k 1.2×	337 0.5×	115 0.2×	245	6.1k
B. Segall	3.3k 0.8×	3.8k 1.5×	4.3k 2.8×	842 1.3×	551 1.2×	122	8.4k
D. W. Feldman	1.8k 0.4×	1.0k 0.4×	1.2k 0.8×	578 0.9×	109 0.2×	131	3.0k
R. Triboulet	3.5k 0.9×	2.0k 0.8×	2.2k 1.5×	312 0.5×	148 0.3×	253	4.4k
T. E. Schlesinger	3.1k 0.8×	1.8k 0.7×	1.3k 0.9×	903 1.4×	112 0.2×	256	3.9k
H. Bernas	1.5k 0.4×	2.4k 0.9×	2.0k 1.3×	683 1.1×	494 1.1×	200	4.9k
Roy Clarke	1.5k 0.4×	2.2k 0.9×	4.3k 2.8×	970 1.5×	501 1.1×	207	6.7k
C.R. Crowell	3.9k 1.0×	2.9k 1.1×	973 0.6×	458 0.7×	90 0.2×	70	4.7k

Countries citing papers authored by G. Ottaviani

Since Specialization

Citations

This map shows the geographic impact of G. Ottaviani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Ottaviani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Ottaviani more than expected).

Fields of papers citing papers by G. Ottaviani

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Ottaviani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Ottaviani. The network helps show where G. Ottaviani may publish in the future.

Co-authorship network of co-authors of G. Ottaviani

This figure shows the co-authorship network connecting the top 25 collaborators of G. Ottaviani. A scholar is included among the top collaborators of G. Ottaviani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Ottaviani. G. Ottaviani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Frabboni, Stefano, G. C. Gazzadi, L. Felisari, et al.. (2004). Transmission electron microscopy study of blisters in high-temperature annealed He and H co-implanted single-crystal silicon. Applied Physics Letters. 85(10). 1683–1685. 8 indexed citations

Corni, Federico, et al.. (1995). Metallurgical and electrical investigation of Pt5Ni95/silicon interactions. Applied Surface Science. 91(1-4). 107–111. 4 indexed citations

Bisero, D., Federico Corni, C. Nobili, et al.. (1995). Visible photoluminescence from He-implanted silicon. Applied Physics Letters. 67(23). 3447–3449. 7 indexed citations

Pavesi, Lorenzo, Gregor Giebel, R. Tonini, et al.. (1994). Visible luminescence from silicon by hydrogen implantation and annealing treatments. Applied Physics Letters. 65(4). 454–456. 12 indexed citations

Mann, R., et al.. (1993). Silicide Formation in Ti-Si and Co-Si REACTIONS. MRS Proceedings. 311. 2 indexed citations

Rojas, S., L. Zanotti, A. Borghesi, et al.. (1992). Properties of borophosphosilicate glass films deposited by different chemical vapor deposition techniques. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 633–642. 39 indexed citations

Cerofolini, G. F., Paola Manini, L. Meda, et al.. (1985). Damage recovery and dopant activation phenomena in heavily arsenic-implanted silicon. Thin Solid Films. 129(1-2). 111–125. 4 indexed citations

Ottaviani, G., K. N. Tu, R. D. Thompson, J. W. Mayer, & S. S. Lau. (1983). Interaction of Pd–Er alloys with silicon. Journal of Applied Physics. 54(8). 4614–4622. 12 indexed citations

Tromp, R. M., E. J. van Loenen, R.G. Smeenk, et al.. (1983). Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature. Surface Science. 124(1). 1–25. 42 indexed citations

10.

Zheng, L. R., L. S. Hung, J. W. Mayer, G. Majni, & G. Ottaviani. (1982). Lateral diffusion of Ni and Si through Ni2Si in Ni/Si couples. Applied Physics Letters. 41(7). 646–649. 51 indexed citations

11.

Cerofolini, G. F., M. L. Polignano, F. Nava, & G. Ottaviani. (1982). On the mechanism responsible for phosphorus inactivation in heavily doped silicon. Thin Solid Films. 97(4). 363–367. 4 indexed citations

12.

Ottaviani, G. & G. Majni. (1979). The identification of key variables in the solid phase epitaxial growth of silicon. Journal of Applied Physics. 50(11). 6865–6869. 4 indexed citations

13.

Minder, R., G. Ottaviani, & C. Canali. (1976). Charge transport in layer semiconductors. Journal of Physics and Chemistry of Solids. 37(4). 417–424. 102 indexed citations

14.

Canali, Claudio, et al.. (1976). Hot-hole diffusivity in Ge at 77 K. Solid State Communications. 20(1). 57–60. 5 indexed citations

15.

Nava, F., et al.. (1976). Electron drift velocity in high-purity Ge between 8 and 240K. Journal of Physics C Solid State Physics. 9(9). 1685–1689. 13 indexed citations

16.

Canali, C., G. Majni, R. Minder, & G. Ottaviani. (1974). Electron-drift-velocity measurements in silicon at high temperatures and their empirical relation to electric field. Electronics Letters. 10(24). 523–524. 4 indexed citations

17.

Canali, Claudio, F. Nava, G. Ottaviani, & K. Zanio. (1973). Effect of scattering and trapping by ionized centers on the electron drift velocity in CdTe. Solid State Communications. 13(8). 1255–1259. 3 indexed citations

18.

Ottaviani, G., D. Sigurd, V. Marrello, J. O. McCaldin, & J. W. Mayer. (1973). Crystal Growth of Silicon and Germanium in Metal Films. Science. 180(4089). 948–949. 14 indexed citations

19.

Ottaviani, G., C. Canali, Carlo Jacoboni, A. Alberigi Quaranta, & K. Zanio. (1972). Poole-Frenkel effect on holes in CdTe. Solid State Communications. 10(9). 745–748. 6 indexed citations

20.

Canali, C., Mario Martini, G. Ottaviani, & K. Zanio. (1971). Dependence of electron trapping time on the electric field in semi-insulating CdTe. Solid State Communications. 9(2). 163–166. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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