Abdullah I. Alhassan

1.1k total citations
23 papers, 937 citations indexed

About

Abdullah I. Alhassan is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Abdullah I. Alhassan has authored 23 papers receiving a total of 937 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Abdullah I. Alhassan's work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (8 papers). Abdullah I. Alhassan is often cited by papers focused on GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (11 papers) and Semiconductor Quantum Structures and Devices (8 papers). Abdullah I. Alhassan collaborates with scholars based in United States, Saudi Arabia and France. Abdullah I. Alhassan's co-authors include Shuji Nakamura, Steven P. DenBaars, Matthew S. Wong, David Hwang, Ryan Ley, Changmin Lee, James S. Speck, Asad J. Mughal, Mahdi Alqahtani and Claude Weisbuch and has published in prestigious journals such as Physical Review Letters, Nature Communications and Applied Physics Letters.

In The Last Decade

Abdullah I. Alhassan

23 papers receiving 888 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Abdullah I. Alhassan United States 14 594 422 349 320 319 23 937
Benjamin Leung United States 21 933 1.6× 469 1.1× 682 2.0× 319 1.0× 598 1.9× 40 1.3k
Biplab Sarkar India 20 665 1.1× 517 1.2× 350 1.0× 168 0.5× 498 1.6× 75 1.0k
Debdeep Jena United States 12 375 0.6× 745 1.8× 652 1.9× 247 0.8× 285 0.9× 29 1.2k
Kanglin Xiong United States 15 298 0.5× 359 0.9× 254 0.7× 191 0.6× 170 0.5× 42 652
Guoqing Miao China 16 528 0.9× 493 1.2× 594 1.7× 155 0.5× 599 1.9× 57 1.1k
Joshua S. Harris United States 12 258 0.4× 316 0.7× 362 1.0× 121 0.4× 270 0.8× 14 734
Chengqun Gui China 17 491 0.8× 391 0.9× 335 1.0× 212 0.7× 246 0.8× 43 845
Guillaume Lheureux France 13 235 0.4× 452 1.1× 243 0.7× 472 1.5× 230 0.7× 19 825
K. Hazu Japan 15 550 0.9× 258 0.6× 318 0.9× 167 0.5× 376 1.2× 48 724
Ricky W. Chuang Taiwan 21 754 1.3× 762 1.8× 633 1.8× 395 1.2× 417 1.3× 117 1.4k

Countries citing papers authored by Abdullah I. Alhassan

Since Specialization
Citations

This map shows the geographic impact of Abdullah I. Alhassan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Abdullah I. Alhassan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Abdullah I. Alhassan more than expected).

Fields of papers citing papers by Abdullah I. Alhassan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Abdullah I. Alhassan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Abdullah I. Alhassan. The network helps show where Abdullah I. Alhassan may publish in the future.

Co-authorship network of co-authors of Abdullah I. Alhassan

This figure shows the co-authorship network connecting the top 25 collaborators of Abdullah I. Alhassan. A scholar is included among the top collaborators of Abdullah I. Alhassan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Abdullah I. Alhassan. Abdullah I. Alhassan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Alhassan, Abdullah I., Cheyenne Lynsky, Daniel J. Myers, et al.. (2023). Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy. Physical review. B.. 107(3). 4 indexed citations
2.
Ahmad, Muhammad Ashfaq, Abdullah I. Alhassan, Idris A. Ajia, et al.. (2023). Growth modification via indium surfactant for InGaN/GaN green LED. Semiconductor Science and Technology. 38(3). 35025–35025. 9 indexed citations
3.
Lassailly, Y., Lucio Martinelli, Abdullah I. Alhassan, et al.. (2022). Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds. Physical Review Letters. 129(21). 216602–216602. 8 indexed citations
4.
Mohtashami, Yahya, Ryan A. DeCrescent, Abdullah I. Alhassan, et al.. (2022). Designing Highly Directional Luminescent Phased-Array Metasurfaces with Reciprocity-Based Simulations. ACS Omega. 7(26). 22477–22483. 5 indexed citations
5.
Bouzidi, Mohamed, Ziaul Raza Khan, Mohamed Gandouzi, et al.. (2022). Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures. Optical Engineering. 61(10). 2 indexed citations
6.
Mohtashami, Yahya, Ryan A. DeCrescent, Prasad P. Iyer, et al.. (2021). Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission. Nature Communications. 12(1). 3591–3591. 49 indexed citations
7.
Luo, Lingzhi, Yixuan Huang, Abdullah I. Alhassan, et al.. (2021). MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors. Light Science & Applications. 10(1). 177–177. 113 indexed citations
8.
Iyer, Prasad P., Ryan A. DeCrescent, Yahya Mohtashami, et al.. (2020). Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces. Nature Photonics. 14(9). 543–548. 84 indexed citations
9.
Alonizan, N., K. Omri, M.A. Gondal, et al.. (2020). Photocatalytic Activity, Microstructures and Luminescent Study of Ti-ZS:M Nano-composites Materials. Journal of Inorganic and Organometallic Polymers and Materials. 30(11). 4372–4381. 15 indexed citations
10.
Myers, Daniel J., Abdullah I. Alhassan, Lucio Martinelli, et al.. (2019). Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop. Physical review. B.. 100(12). 16 indexed citations
11.
Young, Erin C., et al.. (2019). Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. Optics Express. 27(6). 8327–8327. 14 indexed citations
12.
Alhassan, Abdullah I., et al.. (2018). Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes. Applied Physics Letters. 112(14). 9 indexed citations
13.
Wong, Matthew S., David Hwang, Abdullah I. Alhassan, et al.. (2018). High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Optics Express. 26(16). 21324–21324. 284 indexed citations
14.
Alqahtani, Mahdi, Sanjayan Sathasivam, Abdullah I. Alhassan, et al.. (2018). InGaN/GaN Multiple Quantum Well Photoanode Modified with Cobalt Oxide for Water Oxidation. ACS Applied Energy Materials. 1(11). 6417–6424. 28 indexed citations
15.
Alhassan, Abdullah I., Nathan G. Young, Robert M. Farrell, et al.. (2018). Development of high performance green c-plane III-nitride light-emitting diodes. Optics Express. 26(5). 5591–5591. 45 indexed citations
16.
Mughal, Asad J., Erin C. Young, Abdullah I. Alhassan, et al.. (2017). Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs. Applied Physics Express. 10(12). 121006–121006. 9 indexed citations
17.
Agarwal, Anchal, Chirag Gupta, Abdullah I. Alhassan, et al.. (2017). Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition. Applied Physics Express. 10(11). 111002–111002. 5 indexed citations
18.
Li, Hongjian, Bastien Bonef, Abdullah I. Alhassan, et al.. (2017). Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates. ACS Applied Materials & Interfaces. 9(41). 36417–36422. 49 indexed citations
19.
Hwang, David, Asad J. Mughal, Matthew S. Wong, et al.. (2017). Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition. Applied Physics Express. 11(1). 12102–12102. 60 indexed citations
20.
Alhassan, Abdullah I., Robert M. Farrell, Asad J. Mughal, et al.. (2016). High luminous efficacy green light-emitting diodes with AlGaN cap layer. Optics Express. 24(16). 17868–17868. 77 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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