B. Holländer

2.0k total citations
81 papers, 1.7k citations indexed

About

B. Holländer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. Holländer has authored 81 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 70 papers in Electrical and Electronic Engineering, 34 papers in Atomic and Molecular Physics, and Optics and 20 papers in Materials Chemistry. Recurrent topics in B. Holländer's work include Semiconductor materials and devices (32 papers), Silicon and Solar Cell Technologies (31 papers) and Advancements in Semiconductor Devices and Circuit Design (21 papers). B. Holländer is often cited by papers focused on Semiconductor materials and devices (32 papers), Silicon and Solar Cell Technologies (31 papers) and Advancements in Semiconductor Devices and Circuit Design (21 papers). B. Holländer collaborates with scholars based in Germany, France and United Kingdom. B. Holländer's co-authors include S. Mantl, Dan Buca, H.-J. Herzog, T. Hackbarth, T. Stoïca, E. Kasper, Stephan Wirths, H. Trinkaus, Gregor Mußler and Detlev Grützmacher and has published in prestigious journals such as The Journal of Chemical Physics, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

B. Holländer

79 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Holländer Germany 23 1.4k 667 510 278 213 81 1.7k
H. Cerva Germany 23 994 0.7× 590 0.9× 613 1.2× 252 0.9× 193 0.9× 91 1.5k
Y. K. Yeo United States 19 808 0.6× 460 0.7× 402 0.8× 132 0.5× 252 1.2× 95 1.0k
Gernot S. Pomrenke United States 15 970 0.7× 595 0.9× 1.0k 2.0× 258 0.9× 249 1.2× 32 1.4k
T. Tuomi Finland 16 814 0.6× 422 0.6× 382 0.7× 172 0.6× 211 1.0× 128 1.1k
H. Tanoue Japan 22 1.1k 0.8× 640 1.0× 551 1.1× 227 0.8× 84 0.4× 128 1.6k
P.N. Favennec France 17 1.1k 0.7× 576 0.9× 629 1.2× 116 0.4× 298 1.4× 67 1.4k
L. J. Guido United States 20 1.1k 0.8× 1.0k 1.5× 307 0.6× 139 0.5× 419 2.0× 77 1.4k
M. Hanke Germany 19 513 0.4× 632 0.9× 633 1.2× 285 1.0× 215 1.0× 85 1.2k
K. C. Hsieh United States 24 1.7k 1.2× 1.6k 2.3× 406 0.8× 164 0.6× 360 1.7× 126 2.0k
Junji Saraie Japan 21 1.3k 0.9× 814 1.2× 864 1.7× 92 0.3× 225 1.1× 93 1.6k

Countries citing papers authored by B. Holländer

Since Specialization
Citations

This map shows the geographic impact of B. Holländer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Holländer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Holländer more than expected).

Fields of papers citing papers by B. Holländer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Holländer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Holländer. The network helps show where B. Holländer may publish in the future.

Co-authorship network of co-authors of B. Holländer

This figure shows the co-authorship network connecting the top 25 collaborators of B. Holländer. A scholar is included among the top collaborators of B. Holländer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Holländer. B. Holländer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Linjie, Lei Jin, Lars Knoll, et al.. (2014). Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers. Microelectronic Engineering. 137. 88–91. 2 indexed citations
2.
Zhang, Chao, M. Meier, Andreas Lambertz, et al.. (2014). Optical and Electrical Effects of p-typeμc-SiOx:H in Thin-Film Silicon Solar Cells on Various Front Textures. International Journal of Photoenergy. 2014. 1–10. 7 indexed citations
3.
Oehme, Michael, Dan Buca, Konrad Kostecki, et al.. (2013). Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn. Journal of Crystal Growth. 384. 71–76. 65 indexed citations
4.
Wirths, Stephan, Dan Buca, A. T. Tiedemann, et al.. (2013). Epitaxial Growth of Ge1-xSnx by Reduced Pressure CVD Using SnCl4 and Ge2H6. ECS Transactions. 50(9). 885–893. 26 indexed citations
5.
Wirths, Stephan, Dan Buca, Gregor Mußler, et al.. (2013). Reduced Pressure CVD Growth of Ge and Ge1−xSnxAlloys. ECS Journal of Solid State Science and Technology. 2(5). N99–N102. 65 indexed citations
6.
Reuters, B., N. Ketteniss, H. Hahn, et al.. (2013). Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers. Journal of Electronic Materials. 42(5). 826–832. 31 indexed citations
7.
Wang, Yu, Qing‐Tai Zhao, Dan Buca, et al.. (2013). Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 307. 408–411. 2 indexed citations
8.
Ketteniss, N., Abdelrahman M. Askar, B. Reuters, et al.. (2012). Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices. Semiconductor Science and Technology. 27(5). 55012–55012. 11 indexed citations
9.
Wirths, Stephan, Dan Buca, A. T. Tiedemann, et al.. (2012). Low Temperature RPCVD Epitaxial Growth of Si1-xGex and Ge Using Si2H6 and Ge2H6. 1–2. 1 indexed citations
10.
Reuters, B., et al.. (2012). Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy. Journal of Applied Physics. 112(9). 18 indexed citations
11.
Raïssi, Mahfoudh, G. Regula, S. Nitsche, et al.. (2007). Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers. MRS Proceedings. 994. 2 indexed citations
12.
Stangl, J., G. Bauer, Dan Buca, et al.. (2006). Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique. Semiconductor Science and Technology. 22(1). S212–S215. 8 indexed citations
13.
Buca, Dan, S. Feste, B. Holländer, et al.. (2005). Growth of strained Si on He ion implanted Si/SiGe heterostructures. Solid-State Electronics. 50(1). 32–37. 20 indexed citations
14.
Luysberg, M., H. Trinkaus, B. Holländer, et al.. (2002). Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates. Journal of Applied Physics. 92(8). 4290–4295. 58 indexed citations
15.
Mantl, S., B. Holländer, R. Liedtke, et al.. (1999). Strain relaxation of epitaxial SiGe layers on Si(1 0 0) improved by hydrogen implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 29–34. 45 indexed citations
16.
Paul, Douglas J., Gareth Redmond, B. O'Neill, et al.. (1998). Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques. Thin Solid Films. 336(1-2). 130–136. 13 indexed citations
17.
Rüdiger, U., P. Fumagalli, Thomas R. Roos, B. Holländer, & G. Güntherodt. (1997). Magneto-optic study of the high-temperature coercivity of MnBiAl and MnBiPt films. IEEE Transactions on Magnetics. 33(5). 3241–3243. 3 indexed citations
18.
Holländer, B., et al.. (1996). Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces. Thin Solid Films. 287(1-2). 93–100. 13 indexed citations
19.
Kasper, E., Alexander Schuh, G. Bauer, B. Holländer, & H. Kibbel. (1995). Test of Vegard's law in thin epitaxial SiGe layers. Journal of Crystal Growth. 157(1-4). 68–72. 76 indexed citations
20.
Mantl, S., B. Holländer, W. Jäger, et al.. (1989). Ion implantation in Si/Si1−xGex epitaxial layers and superlattices. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 39(1-4). 405–408. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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