B. Holländer

1.5k citations

52 papers · 1.3k indexed · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Atomic and Molecular Physics, and Optics 24
- Semiconductor materials and interfaces 14
- Semiconductor Quantum Structures and Devices 10
Electrical and Electronic Engineering 44
- Semiconductor materials and devices 26
- Silicon and Solar Cell Technologies 16
- Advancements in Semiconductor Devices and Circuit Design 11
- Thin-Film Transistor Technologies 8
- Integrated Circuits and Semiconductor Failure Analysis 6

Co-authors: H.-J. Herzog G. Abstreiter F. Schäffler D. Többen S. Mantl Darrell G. Schlom J. Schubert L. F. Edge
Journals: Applied Physics Letters (11 papers)Solid-State Electronics (3 papers)Materials Science and Engineering B (3 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (3 papers)Applied Surface Science (2 papers)
Partner nations: Germany United States France

In The Last Decade

B. Holländer

52 papers receiving 1.2k citations

Peers

Countries citing papers authored by B. Holländer

Since Specialization

Citations

This map shows the geographic impact of B. Holländer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Holländer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Holländer more than expected).

Fields of papers citing papers by B. Holländer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Holländer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Holländer. The network helps show where B. Holländer may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Holländer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Holländer Line = papers co-authored together B. Holländer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures ECS Transactions ·Stephan Wirths, Z. Ikonić, Nils von den Driesch, Gregor Mußler, U. Breuer, A. T. Tiedemann, Li Baqiang, B. Holländer, T. Stoïca, Jean‐Michel Hartmann, Detlev Grützmacher, S. Mantl, Dan Buca	2014	7
2	Amorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivity Journal of Materials Chemistry A ·Thomas Leichtweiß, 正路森井, Julius Koettgen, Rüdiger Schmidt, B. Holländer, Manfred Martin, Matthias Wuttig, Jürgen Janek	2014	61
3	Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors Applied Physics Letters ·Stephan Wirths, A. T. Tiedemann, Z. Ikonić, P. Harrison, B. Holländer, T. Stoïca, Gregor Mußler, M. Myronov, Jean‐Michel Hartmann, Detlev Grützmacher, Dan Buca, S. Mantl	2013	124
4	Epitaxial growth of europium monoxide on diamond Applied Physics Letters ·Alexander Melville, 孝夫江東, A. Schmehl, Martin C. Fischer, S. Gsell, M. Schreck, D. D. Awschalom, T. Heeg, B. Holländer, J. Schubert, Darrell G. Schlom	2013	7
5	Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacts by C+ Pre-Implantation Electrochemical and Solid-State Letters ·Lloyd John Schmaltz, Yu Wang, Qing‐Tai Zhao, Dan Buca, B. Holländer, Jean‐Michel Hartmann, Miaomiao Zhang, Xin Wang, S. Mantl	2011	11
6	Characterization of non-stoichiometric co-sputtered Ba0.6Sr0.4(Ti1 − x Fe x )1 + x O3 − δ thin films for tunable passive microwave applications Analytical and Bioanalytical Chemistry ·C. Neil Strait, Holger Geßwein, Jose Eduardo Barcelon, B. Holländer, Carlos Azucena, Joachim R. Binder, Rüdiger‐A. Eichel, J. Haußelt, Michael Brüns	2011	6
7	Wet Chemical Etching of Si, Si[sub 1−x]Ge[sub x], and Ge in HF:H[sub 2]O[sub 2]:CH[sub 3]COOH Journal of The Electrochemical Society ·B. Holländer, Dan Buca, S. Mantl, Jean‐Michel Hartmann	2010	23
8	Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates Applied Physics Letters ·Dan Buca, Renato Amaral Minamisawa, H. Trinkaus, B. Holländer, Ngoc Duy Nguyen, Roger Loo, S. Mantl	2009	4
9	Addition of yttrium into HfO2 films: Microstructure and electrical properties Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·C. Dubourdieu, Erwan Rauwel, Hervé Roussel, F. Ducroquet, B. Holländer, Marta D. Rossell, G. Van Tendeloo, S. Lhostis, S. Rushworth	2009	39
10	SmScO 3 thin films as an alternative gate dielectric Applied Physics Letters ·Ronald Germain, J. M. J. Lopes, M. Roeckerath, St. Lenk, B. Holländer, Yufei Jia, Darrell G. Schlom, J. Schubert, S. Mantl	2008	19
11	From Thin Relaxed SiGe Buffer Layers to Strained Silicon Directly on Oxide ECS Transactions ·S. Mantl, Dan Buca, B. Holländer, St. Lenk, Burka Ni, M. Luysberg, امیرحسن حاجی ترخانی, Roger Loo, Matty Caymax, Drago Gajić, Ionut Radu, Manfred Reiche, Silke Christiansen, 曺章煥	2006	5
12	Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon Applied Physics Letters ·L. F. Edge, Darrell G. Schlom, Alexio Clovis Lohanivo, Yves J. Chabal, John R. Williams, Scott A. Chambers, Christopher L. Hinkle, G. Lucovsky, Yue‐De Yang, Susanne Stemmer, M. Copel, B. Holländer, J. Schubert	2004	75
13	Measurement of the band offsets between amorphous LaAlO3 and silicon Applied Physics Letters ·L. F. Edge, Darrell G. Schlom, Scott A. Chambers, Jian-Han Guo, J. L. Freeouf, B. Holländer, J. Schubert	2004	144
14	Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructues Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Christy Willis Robinson, Bergnell Anneli, P.F.P. Fichtner, Erwan Oliviero, M. Behar, F.C. Zawislak, B. Holländer, M. Luysberg, S. Mantl, Roger Loo, Matty Caymax	2004	3
15	Self-assembling of Ge on finite Si(001) areas comparable with the island size Applied Physics Letters ·L. Vescan, T. Stoïca, B. Holländer, A. G. Nassiopoulou, Hong-Chi Lin, I. Raptis, Eli Sutter	2003	33
16	Si/SiGe electron resonant tunneling diodes Applied Physics Letters ·Douglas J. Paul, P. See, Igor Zozoulenko, Karl‐Fredrik Berggren, B. Kabius, B. Holländer, S. Mantl	2000	34
17	Josephson junctions fabricated by oxygen ion irradiation of YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films IEEE Transactions on Applied Superconductivity ·Garman Re, S. Hu, C. R. Becker, Yozar Albar Alhaitami, Bernd Spangenberg, H. Kurz, N. D. Zakharov, D. Hesse, B. Holländer	1997	3
18	Strain and misfit dislocation density in finite lateral size Si1−x Gex films grownby selective epitaxy Thin Solid Films ·B. Holländer, L. Vescan, S. Mesters, Lorena Alba Hernández	1997	11
19	High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer Semiconductor Science and Technology ·F. Schäffler, D. Többen, H.-J. Herzog, G. Abstreiter, B. Holländer	1992	211
20	Ion scattering studies of strained Si/Si1−xGex superlattices Superlattices and Microstructures ·B. Holländer, S. Mantl, B. Stritzker, R. Butz	1991	1

About B. Holländer

B. Holländer is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 52 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (26 papers), Silicon and Solar Cell Technologies (16 papers), Semiconductor materials and interfaces (14 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor Quantum Structures and Devices (10 papers), Thin-Film Transistor Technologies (8 papers), Electronic and Structural Properties of Oxides (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.0k citations), Atomic and Molecular Physics, and Optics (409 citations), Condensed Matter Physics (146 citations), Materials Chemistry (561 citations) and Electronic, Optical and Magnetic Materials (159 citations). B. Holländer has collaborated with scholars based in Germany, United States and France. Frequent co-authors include H.-J. Herzog, G. Abstreiter, F. Schäffler, D. Többen, S. Mantl, Darrell G. Schlom, J. Schubert, L. F. Edge, Scott A. Chambers and Dan Buca. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, Materials Science and Engineering B, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms and Applied Surface Science.

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