Toshiya Tabuchi

580 total citations
35 papers, 498 citations indexed

About

Toshiya Tabuchi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Toshiya Tabuchi has authored 35 papers receiving a total of 498 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 20 papers in Electrical and Electronic Engineering and 19 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Toshiya Tabuchi's work include GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (18 papers) and Semiconductor materials and devices (14 papers). Toshiya Tabuchi is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (18 papers) and Semiconductor materials and devices (14 papers). Toshiya Tabuchi collaborates with scholars based in Japan, United States and Taiwan. Toshiya Tabuchi's co-authors include Koh Matsumoto, Yoshiki Yano, Akinori Ubukata, Yuya Yamaoka, Takashi Egawa, Akira Mishima, Joseph J. Freedsman, Kiminori Itoh, Yasuo Tarui and Mayank T. Bulsara and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

Toshiya Tabuchi

33 papers receiving 470 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Toshiya Tabuchi Japan 13 401 335 245 164 85 35 498
Kamal Hussain United States 12 307 0.8× 279 0.8× 208 0.8× 137 0.8× 99 1.2× 48 463
B. Peres United States 12 347 0.9× 282 0.8× 209 0.9× 100 0.6× 51 0.6× 21 401
P. Kruszewski Poland 12 214 0.5× 324 1.0× 163 0.7× 264 1.6× 105 1.2× 47 480
T.K. Ko Taiwan 14 468 1.2× 262 0.8× 236 1.0× 263 1.6× 139 1.6× 34 561
M. H. Hsieh Taiwan 9 360 0.9× 169 0.5× 132 0.5× 237 1.4× 143 1.7× 15 446
Jinyu Ni China 11 395 1.0× 310 0.9× 230 0.9× 131 0.8× 57 0.7× 32 458
Hiroya Kimura Japan 5 429 1.1× 164 0.5× 232 0.9× 209 1.3× 135 1.6× 6 459
Cory Lund United States 15 619 1.5× 398 1.2× 276 1.1× 195 1.2× 181 2.1× 31 698
Tae Mochizuki Japan 7 506 1.3× 200 0.6× 308 1.3× 260 1.6× 122 1.4× 14 548
Veit Hoffmann Germany 14 441 1.1× 273 0.8× 197 0.8× 222 1.4× 235 2.8× 44 585

Countries citing papers authored by Toshiya Tabuchi

Since Specialization
Citations

This map shows the geographic impact of Toshiya Tabuchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Toshiya Tabuchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Toshiya Tabuchi more than expected).

Fields of papers citing papers by Toshiya Tabuchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Toshiya Tabuchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Toshiya Tabuchi. The network helps show where Toshiya Tabuchi may publish in the future.

Co-authorship network of co-authors of Toshiya Tabuchi

This figure shows the co-authorship network connecting the top 25 collaborators of Toshiya Tabuchi. A scholar is included among the top collaborators of Toshiya Tabuchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Toshiya Tabuchi. Toshiya Tabuchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hitchcock, Collin, R. F. Karlicek, Yoshiki Yano, et al.. (2020). Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits. physica status solidi (a). 217(7). 6 indexed citations
2.
Murotani, Hideaki, Satoshi Kurai, Narihito Okada, et al.. (2019). Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination. Japanese Journal of Applied Physics. 58(SC). SCCB02–SCCB02. 9 indexed citations
3.
Wetzel, Christian, et al.. (2019). Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers. Solid-State Electronics. 162. 107646–107646. 3 indexed citations
4.
Yamaoka, Yuya, Akinori Ubukata, Yoshiki Yano, et al.. (2018). Effect of threading dislocation in an AlN nucleation layer and vertical leakage current in an AlGaN/GaN high-electron mobility transistor structure on a silicon substrate. Semiconductor Science and Technology. 34(3). 35015–35015. 10 indexed citations
5.
Ubukata, Akinori, Hassanet Sodabanlu, Kentaroh Watanabe, et al.. (2018). Accelerated GaAs growth through MOVPE for low-cost PV applications. Journal of Crystal Growth. 489. 63–67. 8 indexed citations
6.
Matsumoto, Koh, Akinori Ubukata, Yoshiki Yano, et al.. (2018). Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V. Journal of Crystal Growth. 507. 134–138. 7 indexed citations
7.
Gao, Jianyi, Wenwen Li, Yuya Yamaoka, et al.. (2018). Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices. IEEE Transactions on Electron Devices. 65(12). 5301–5306. 9 indexed citations
8.
Chen, Junwei, et al.. (2017). Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template. Solid-State Electronics. 138. 84–88. 10 indexed citations
9.
Kurai, Satoshi, Narihito Okada, Kazuyuki Tadatomo, et al.. (2017). Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy. physica status solidi (b). 255(5). 2 indexed citations
10.
Mishima, Akira, et al.. (2016). Growth of silicon-doped Al. Japanese Journal of Applied Physics. 55(5). 2 indexed citations
11.
12.
13.
Freedsman, Joseph J., Takashi Egawa, Yuya Yamaoka, et al.. (2014). Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V). Applied Physics Express. 7(4). 41003–41003. 74 indexed citations
14.
Sakamoto, Tatsuya, Tokio Takahashi, Toshihide Ide, et al.. (2014). Study on AlGaN/GaN growth on carbonized Si substrate. Japanese Journal of Applied Physics. 53(4S). 04EH09–04EH09. 2 indexed citations
15.
Yano, Yoshiki, et al.. (2013). Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool. Japanese Journal of Applied Physics. 52(8S). 08JB06–08JB06. 12 indexed citations
16.
Matsumoto, Koh, et al.. (2008). High growth rate metal organic vapor phase epitaxy GaN. Journal of Crystal Growth. 310(17). 3950–3952. 19 indexed citations
17.
Tabuchi, Toshiya, et al.. (1992). Metal Complexes for Preparing Ferroelectric Thin Films by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics. 31(9S). 2992–2992. 13 indexed citations
18.
Tabuchi, Toshiya, et al.. (1991). Application of Penta-Di-Methyl-Amino-Tantalum to a Tantalum Source in Chemical Vapor Deposition of Tantalum Oxide Films. Japanese Journal of Applied Physics. 30(11B). L1974–L1974. 15 indexed citations
19.
Tabuchi, Toshiya, et al.. (1987). Low-Temperature Growth of Transparent and Conducting Tin Oxide Film by Photo-Chemical Vapor Deposition. Japanese Journal of Applied Physics. 26(3A). L186–L186. 16 indexed citations
20.
Matsumoto, Koh, et al.. (1986). Flow patterns in various vertical reactors and movpe growth. Journal of Crystal Growth. 77(1-3). 151–156. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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