S. I. Stenin

1.3k total citations
55 papers, 1.1k citations indexed

About

S. I. Stenin is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, S. I. Stenin has authored 55 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Atomic and Molecular Physics, and Optics, 22 papers in Electrical and Electronic Engineering and 21 papers in Materials Chemistry. Recurrent topics in S. I. Stenin's work include Semiconductor materials and interfaces (21 papers), Semiconductor Quantum Structures and Devices (15 papers) and Surface and Thin Film Phenomena (13 papers). S. I. Stenin is often cited by papers focused on Semiconductor materials and interfaces (21 papers), Semiconductor Quantum Structures and Devices (15 papers) and Surface and Thin Film Phenomena (13 papers). S. I. Stenin collaborates with scholars based in Russia, Bulgaria and Germany. S. I. Stenin's co-authors include A. L. Aseev, А. В. Латышев, A.B. Krasilnikov, Л. В. Соколов, Е. М. Труханов, O. P. Pchelyakov, B.Z. Olshanetsky, Т. А. Гаврилова, А. Е. Dolbak and S. A. Teys and has published in prestigious journals such as Surface Science, Thin Solid Films and Journal of Crystal Growth.

In The Last Decade

S. I. Stenin

52 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
S. I. Stenin Russia	14	794	373	326	188	172	55	1.1k
P. M. J. Marée Netherlands	9	805 1.0×	599 1.6×	357 1.1×	113 0.6×	192 1.1×	12	1.1k
Y.-N. Yang United States	16	677 0.9×	256 0.7×	194 0.6×	131 0.7×	139 0.8×	31	827
C. W. Snyder United States	13	963 1.2×	642 1.7×	372 1.1×	151 0.8×	137 0.8×	20	1.2k
A.B. Krasilnikov Russia	11	653 0.8×	200 0.5×	203 0.6×	171 0.9×	173 1.0×	21	823
J. Zhang United Kingdom	15	540 0.7×	373 1.0×	248 0.8×	125 0.7×	167 1.0×	35	789
T. Shitara United Kingdom	14	686 0.9×	427 1.1×	260 0.8×	155 0.8×	199 1.2×	25	877
W. Telieps Germany	12	623 0.8×	228 0.6×	177 0.5×	192 1.0×	120 0.7×	15	896
Tsunenori Sakamoto Poland	19	778 1.0×	603 1.6×	274 0.8×	120 0.6×	39 0.2×	44	1.0k
T. Klitsner United States	12	500 0.6×	309 0.8×	539 1.7×	152 0.8×	29 0.2×	18	1.0k
V. P. LaBella United States	19	874 1.1×	560 1.5×	488 1.5×	114 0.6×	67 0.4×	63	1.1k

Countries citing papers authored by S. I. Stenin

Since Specialization

Citations

This map shows the geographic impact of S. I. Stenin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. I. Stenin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. I. Stenin more than expected).

Fields of papers citing papers by S. I. Stenin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. I. Stenin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. I. Stenin. The network helps show where S. I. Stenin may publish in the future.

Co-authorship network of co-authors of S. I. Stenin

This figure shows the co-authorship network connecting the top 25 collaborators of S. I. Stenin. A scholar is included among the top collaborators of S. I. Stenin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. I. Stenin. S. I. Stenin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Krasilnikov, A.B., et al.. (1992). Monoatomic step clustering during superstructural transitions on Si(111) surface. Journal of Crystal Growth. 116(1-2). 178–184. 9 indexed citations

Dolbak, А. Е., B.Z. Olshanetsky, S. I. Stenin, S. A. Teys, & Т. А. Гаврилова. (1991). The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces. Surface Science. 247(1). 32–42. 27 indexed citations

Govorov, A. O., et al.. (1990). Phonon spectrum of GaAs-lnAs superlattices. Journal of Experimental and Theoretical Physics. 71(3). 603.

Никифоров, А. И., et al.. (1990). Investigations of MBE-Grown Superlattices with Sb Delta-Layers in Silicon by Rutherford Backscattering Spectrometry. physica status solidi (a). 121(2). 523–532. 2 indexed citations

Däweritz, L., O. P. Pchelyakov, V. I. Mashanov, et al.. (1990). Combined study of RHEED spot profiles and intensity oscillations during MBE growth of Ge on Ge(111). Surface Science. 230(1-3). L162–L168. 2 indexed citations

Труханов, Е. М., et al.. (1989). X‐ray double crystal topographic measurements of distorted crystals. Crystal Research and Technology. 24(12). 1253–1258. 4 indexed citations

Pchelyakov, O. P., et al.. (1989). On the origin of superstructures observed on surfaces of Ge and GexSi1−x films grown on Si(111)(7 × 7). Surface Science. 207(2-3). 418–426. 16 indexed citations

Латышев, А. В., A.B. Krasilnikov, A. L. Aseev, & S. I. Stenin. (1988). Effect of electric current on the ratio of the areas of the (2X1) and (1X2) domains at the clean (001) surface of silicon during sublimation. ZhETF Pisma Redaktsiiu. 48. 484.

Gutakovsky, A.K., et al.. (1988). Study of the growth mechanism of modulated structures in the InAsGaAs system. Thin Solid Films. 163. 497–502. 7 indexed citations

10.

Pintus, Sandro, et al.. (1987). Morphological transformations of thin heteroepitaxial films. Thin Solid Films. 151(2). 275–288. 16 indexed citations

11.

Соколов, Л. В., et al.. (1986). Oscillations in the optical characteristics of the growth surface on Ge films during molecular beam epitaxy. 44. 278.

12.

Bolkhovityanov, Yu. B., et al.. (1986). The formation of alxGa1-xAs layers by regrowth on the surface of GaAs during its contact with the undersaturated liquid-containing Al. Journal of Crystal Growth. 78(2). 335–341. 5 indexed citations

13.

Stenin, S. I.. (1984). Processes of defect formation in epitaxial semiconductor films. Thin Solid Films. 116(1-3). 99–110. 2 indexed citations

14.

Bolkhovityanov, Yu. B., et al.. (1984). Auger analysis of a GaAs (111) a surface after its contact with the InGaAsP saturated liquid. physica status solidi (a). 84(1). K13–K16. 3 indexed citations

15.

Гутаковский, А. К., S. I. Stenin, & Б. Г. Захаров. (1981). The formation of partial misfit dislocations during heteroepitaxy. physica status solidi (a). 67(1). 299–304. 11 indexed citations

16.

Toropov, A. I., et al.. (1978). Micromorphology and defects of non‐doped gallium arsenide layers. Kristall und Technik. 13(11). 1305–1312. 3 indexed citations

17.

Stenin, S. I., et al.. (1977). Superconductivity of rapidly condensed films. 26(8). 10–269. 1 indexed citations

18.

Sidorov, Yu. G., et al.. (1976). Structural inhomogeneities in gallium arsenide epitaxial layers. Thin Solid Films. 32(2). 343–345. 3 indexed citations

19.

Труханов, Е. М., et al.. (1976). Specific features of the dislocation structure of germanium in the system germanium–pyrolitic silica film. physica status solidi (a). 33(1). 435–442. 13 indexed citations

20.

Pchelyakov, O. P., et al.. (1973). Silicon homoepitaxy with ion sputtering. I. Mechanism of growth. physica status solidi (a). 17(1). 339–351. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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