A. I. Nikiforov

785 citations

58 papers · 622 indexed · h-index 13

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 43
- Semiconductor materials and interfaces 24
- Quantum and electron transport phenomena 6
- Surface and Thin Film Phenomena 6
Materials Chemistry
- Silicon Nanostructures and Photoluminescence 29
Electrical and Electronic Engineering top 10%
- Photonic and Optical Devices 20
- Advancements in Semiconductor Devices and Circuit Design 6
- Semiconductor materials and devices 6
Biomedical Engineering
Condensed Matter Physics

Co-authors: А. В. Двуреченский A. I. Yakimov O. P. Pchelyakov Bert Voigtländer Yu. B. Bolkhovityanov V. I. Mashanov A. V. Nenashev B.Z. Olshanetsky
Cited by: Atomic and Molecular Physics, and Optics Materials Chemistry Electrical and Electronic Engineering
Journals: Thin Solid Films (6 papers)Physical Review B (5 papers)Nanoscale Research Letters (4 papers)
Partner nations: Russia Germany Portugal

In The Last Decade

A. I. Nikiforov

53 papers receiving 601 citations

Peers

Countries citing papers authored by A. I. Nikiforov

Since Specialization

Citations

This map shows the geographic impact of A. I. Nikiforov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. I. Nikiforov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. I. Nikiforov more than expected).

Fields of papers citing papers by A. I. Nikiforov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. I. Nikiforov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. I. Nikiforov. The network helps show where A. I. Nikiforov may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. I. Nikiforov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. I. Nikiforov Line = papers co-authored together A. I. Nikiforov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Some design and applying aspects of Molecular Beam Epitaxy (MBE) machine Main Units in Ultra-Vacuum of Space EPSC ·太一中嶌,O. P. Pchelyakov,A. I. Nikiforov,Л. В. Соколов,В. В. Преображенский,赖彦斌	2017	1
2	Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy Semiconductors ·Shiyu Peng,V. I. Mashanov,В.А. Тимофеев,A. I. Nikiforov,S. A. Teys	2015	2
3	Universal behavior of magnetoresistance in quantum dot arrays with different degrees of disorder Journal of Physics Condensed Matter ·N. P. Stepina,Laura Manzano Baena,A. G. Pogosov,А. В. Двуреченский,A. I. Nikiforov,Huangyun Wu Xiujie Wu,Y. M. Galperin	2013	3
4	Initial stage growth of Ge x Si1−x layers and Ge quantum dot formation on Ge x Si1−x surface by MBE Nanoscale Research Letters ·A. I. Nikiforov,В.А. Тимофеев,C. J. Lin,A.K. Gutakovsky,E. Hope-Rapp	2012	16
5	Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μ m) Nanoscale Research Letters ·A. I. Yakimov,В.А. Тимофеев,A. A. Bloshkin,A. I. Nikiforov,А. В. Двуреченский	2012	7
6	Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy Nanoscale Research Letters ·V. I. Mashanov,Vladimir V. Ulyanov,В.А. Тимофеев,A. I. Nikiforov,E. Hope-Rapp,Ing‐Song Yu,R S Sinsinwar	2011	13
7	Electromodulated reflectance study of self-assembled Ge/Si quantum dots Nanoscale Research Letters ·A. I. Yakimov,A. I. Nikiforov,A. A. Bloshkin,А. В. Двуреченский	2011	6
8	Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature AIP Advances ·Ing‐Song Yu,Ting Wu,MohdTabish Rashidi,Hung-Hsiang Cheng,V. I. Mashanov,A. I. Nikiforov,O. P. Pchelyakov,Xiaoshan Wu	2011	38
9	Photoconductivity of Si/Ge/Si structures with 1.5 and 2ML of Ge layer Physica E Low-dimensional Systems and Nanostructures ·Han-Cheol Ahn,V. I. Mashanov,A. I. Nikiforov,Vladimir V. Ulyanov,O. P. Pchelyakov	2010	0
10	Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0) Microelectronics Journal ·A. I. Nikiforov,Vladimir V. Ulyanov,В.А. Тимофеев,O. P. Pchelyakov	2009	7
11	Strong to weak localization transition and two-parameter scaling in a two-dimensional quantum dot array Physical Review B ·N. P. Stepina,Laura Manzano Baena,А. В. Двуреченский,A. I. Nikiforov	2009	7
12	Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots Nanotechnology ·С.В. Кондратенко,А.С. Ніколенко,Taher Tawfik Ahmed Hamza,M. Ya. Valakh,V.О. Yukhymchuk,А. В. Двуреченский,A. I. Nikiforov	2008	11
13	Photoconduction in tunnel-coupled Ge/Si quantum dot arrays Journal of Experimental and Theoretical Physics ·N. P. Stepina,A. I. Yakimov,A. V. Nenashev,А. В. Двуреченский,Н. А. Соболев,Joaquim P. Leitão,V. V. Kirienko,A. I. Nikiforov,Laura Manzano Baena,Luiz Pereira,M.C. Carmo	2006	8
14	Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001) Nanotechnology ·A. I. Yakimov,A. I. Nikiforov,А. В. Двуреченский,Vladimir V. Ulyanov,В. А. Володин,R. Gröetzschel	2006	23
15	RBS/channeling study of buried Ge quantum dots grown in a Si layer Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·弘郭,E. Alves,N.P. Barradas,Joaquim P. Leitão,Н. А. Соболев,M.C. Carmo,A. I. Nikiforov,H. Presting	2006	4
16	Formation of Ge nanoislands on pure and oxidized Si surfaces by MBE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·A. I. Nikiforov,Vladimir V. Ulyanov,A. G. Milekhin,O. P. Pchelyakov,S. A. Teys,S. Schulze,Dietrich R. T. Zahn	2004	1
17	Growth and structure of Ge nanoislands on an atomically clean silicon oxide surface Physics of the Solid State ·A. I. Nikiforov,Vladimir V. Ulyanov,O. P. Pchelyakov,S. A. Teys,А. К. Гутаковский	2004	13
18	Microscopic parameters of heterostructures containing nanoclusters and thin layers of Ge in Si matrix Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ·С. Б. Эренбург,D. Cargill,N. P. Stepina,A. I. Nikiforov,A. V. Nenashev,L. N. Mazalov	2001	5
19	Interlevel optical transitions and many-body effects in a dense array of Ge/Si quantum dots Thin Solid Films ·A. I. Yakimov,А. В. Двуреченский,N. P. Stepina,A. I. Nikiforov	2000	2
20	Microscopic Parameters of Heterostructures with Ge Nanoclusters and Thin Films in a Si Matrix Journal of Structural Chemistry ·С. Б. Эренбург,D. Cargill,A. V. Nenashev,N. P. Stepina,A. I. Nikiforov,L. N. Mazalov	2000	4

About A. I. Nikiforov

A. I. Nikiforov is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry, Development and Surfaces, Coatings and Films, having authored 58 papers that have together received 622 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (43 papers), Silicon Nanostructures and Photoluminescence (29 papers), Semiconductor materials and interfaces (24 papers), Photonic and Optical Devices (20 papers), Quantum and electron transport phenomena (6 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers), Surface and Thin Film Phenomena (6 papers) and Semiconductor materials and devices (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (503 citations), Materials Chemistry (310 citations), Electrical and Electronic Engineering (330 citations), Biomedical Engineering (119 citations) and Condensed Matter Physics (31 citations). A. I. Nikiforov has collaborated with scholars based in Russia, Germany and Portugal. Frequent co-authors include А. В. Двуреченский, A. I. Yakimov, O. P. Pchelyakov, Bert Voigtländer, Yu. B. Bolkhovityanov, V. I. Mashanov, A. V. Nenashev, B.Z. Olshanetsky, В. А. Володин and Л. В. Соколов. Their work appears in journals such as Thin Solid Films, Physical Review B, Nanoscale Research Letters, Journal of Experimental and Theoretical Physics Letters and Journal of Physics Condensed Matter.

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