В.А. Тимофеев

657 total citations
71 papers, 472 citations indexed

About

В.А. Тимофеев is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, В.А. Тимофеев has authored 71 papers receiving a total of 472 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Atomic and Molecular Physics, and Optics, 46 papers in Electrical and Electronic Engineering and 24 papers in Materials Chemistry. Recurrent topics in В.А. Тимофеев's work include Photonic and Optical Devices (36 papers), Semiconductor Quantum Structures and Devices (26 papers) and Silicon Nanostructures and Photoluminescence (20 papers). В.А. Тимофеев is often cited by papers focused on Photonic and Optical Devices (36 papers), Semiconductor Quantum Structures and Devices (26 papers) and Silicon Nanostructures and Photoluminescence (20 papers). В.А. Тимофеев collaborates with scholars based in Russia, Taiwan and Austria. В.А. Тимофеев's co-authors include А. И. Никифоров, V. I. Mashanov, A. A. Bloshkin, А. В. Двуреченский, A. I. Yakimov, A. I. Nikiforov, V. Z. Goldberg, В. А. Володин, V. V. Kirienko and O. P. Pchelyakov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

В.А. Тимофеев

62 papers receiving 458 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
В.А. Тимофеев Russia	13	289	263	182	127	72	71	472
V. Donchev Bulgaria	11	306 1.1×	371 1.4×	243 1.3×	109 0.9×	14 0.2×	63	572
B. Equer France	14	105 0.4×	414 1.6×	294 1.6×	48 0.4×	73 1.0×	57	520
Martin Schäfer Germany	12	120 0.4×	153 0.6×	173 1.0×	43 0.3×	69 1.0×	53	432
Y.L. Lam Singapore	12	239 0.8×	291 1.1×	225 1.2×	186 1.5×	13 0.2×	26	524
P. Jayavel India	11	232 0.8×	322 1.2×	225 1.2×	107 0.8×	8 0.1×	46	472
Patrick W. Granitzka United States	5	269 0.9×	157 0.6×	66 0.4×	44 0.3×	15 0.2×	5	380
Hamed Tarawneh Sweden	8	74 0.3×	152 0.6×	95 0.5×	56 0.4×	21 0.3×	29	284
D. Steiner Israel	12	135 0.5×	529 2.0×	582 3.2×	107 0.8×	49 0.7×	22	738
Patrick Martin France	8	159 0.6×	327 1.2×	69 0.4×	33 0.3×	12 0.2×	19	405
Z G Wang China	10	124 0.4×	163 0.6×	182 1.0×	51 0.4×	12 0.2×	23	326

Countries citing papers authored by В.А. Тимофеев

Since Specialization

Citations

This map shows the geographic impact of В.А. Тимофеев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by В.А. Тимофеев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites В.А. Тимофеев more than expected).

Fields of papers citing papers by В.А. Тимофеев

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by В.А. Тимофеев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by В.А. Тимофеев. The network helps show where В.А. Тимофеев may publish in the future.

Co-authorship network of co-authors of В.А. Тимофеев

This figure shows the co-authorship network connecting the top 25 collaborators of В.А. Тимофеев. A scholar is included among the top collaborators of В.А. Тимофеев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with В.А. Тимофеев. В.А. Тимофеев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Тимофеев, В.А., et al.. (2025). Infrared photoresponse of GeSiSn p–i–n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers. Nanotechnology. 36(13). 135201–135201.

Тимофеев, В.А., et al.. (2024). Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots. IEEE Journal of Selected Topics in Quantum Electronics. 31(1: SiGeSn Infrared Photon. and). 1–8. 2 indexed citations

Тимофеев, В.А.. (2024). Positive properties of a biological preparation based on the consortium genus bacillus. IOP Conference Series Earth and Environmental Science. 1405(1). 12017–12017.

Тимофеев, В.А., V. I. Mashanov, A. A. Bloshkin, et al.. (2024). Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range. Applied Surface Science. 659. 159852–159852. 3 indexed citations

Kumar, Harshvardhan, В.А. Тимофеев, & Rikmantra Basu. (2023). Mid-Infrared Photodetectors Based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor With an i-GeSn Absorber Layer. IEEE Sensors Journal. 23(23). 28759–28768. 2 indexed citations

Deryabin, A. S., А. Е. Dolbak, V. I. Mashanov, et al.. (2020). Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn. Optoelectronics Instrumentation and Data Processing. 56(5). 470–477.

Никифоров, А. И., et al.. (2020). Influence of the Preliminary Annealing Conditions on Step Motion at the Homoepitaxy on the Si(100) Surface. 277. 36–41. 1 indexed citations

Тимофеев, В.А., et al.. (2019). КОЛЕБАТЕЛЬНЫЕ И СВЕТОИЗЛУЧАЮЩИЕ СВОЙСТВА ГЕТЕРОСТРУКТУР SI/SI(1-X)SNX. Письма в Журнал экспериментальной и теоретической физики. 109(5-6). 371–374. 1 indexed citations

Тимофеев, В.А., A. I. Yakimov, V. I. Mashanov, et al.. (2018). Studying the morphology, structure and band diagram of thin GeSiSn films and their mid-infrared photoresponse. Semiconductor Science and Technology. 34(1). 14001–14001. 12 indexed citations

10.

Тимофеев, В.А., et al.. (2018). Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers. Nanoscale Research Letters. 13(1). 29–29. 16 indexed citations

11.

Тимофеев, В.А., et al.. (2018). Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures. Nanotechnology. 29(15). 154002–154002. 20 indexed citations

12.

Никифоров, А. И., et al.. (2018). Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands. Russian Physics Journal. 60(11). 1864–1870. 1 indexed citations

13.

Zinovyev, V. A., А. И. Никифоров, В.А. Тимофеев, et al.. (2016). Photoluminescence enhancement in double Ge/Si quantum dot structures. Journal of Experimental and Theoretical Physics Letters. 104(12). 823–826. 10 indexed citations

14.

Yakimov, A. I., V. V. Kirienko, В.А. Тимофеев, A. A. Bloshkin, & А. В. Двуреченский. (2014). Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors. Nanoscale Research Letters. 9(1). 504–504. 5 indexed citations

15.

Nikiforov, A. I., et al.. (2012). Initial stage growth of Ge x Si1−x layers and Ge quantum dot formation on Ge x Si1−x surface by MBE. Nanoscale Research Letters. 7(1). 561–561. 16 indexed citations

16.

Yakimov, A. I., A. A. Bloshkin, В.А. Тимофеев, А. И. Никифоров, & А. В. Двуреченский. (2012). Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots. Applied Physics Letters. 100(5). 13 indexed citations

17.

Yakimov, A. I., A. A. Bloshkin, В.А. Тимофеев, A. Yu. Nikiforov, & А. В. Двуреченский. (2012). Ge/Si quantum dot photodetectors for midinfrared applications. 1–2. 1 indexed citations

18.

Mashanov, V. I., et al.. (2011). Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy. Nanoscale Research Letters. 6(1). 85–85. 13 indexed citations

19.

Nikiforov, A. I., Vladimir V. Ulyanov, В.А. Тимофеев, & O. P. Pchelyakov. (2009). Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0). Microelectronics Journal. 40(4-5). 782–784. 7 indexed citations

20.

Goldberg, V. Z., В.А. Тимофеев, Michael B. Brenner, et al.. (1997). Highly lying α-cluster states in the light nuclei 16O, 20Ne, 22Ne, and 24Mg. Physics of Atomic Nuclei. 60(7). 1061–1068. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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