Е. В. Спесивцев

431 total citations
34 papers, 312 citations indexed

About

Е. В. Спесивцев is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Е. В. Спесивцев has authored 34 papers receiving a total of 312 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 9 papers in Biomedical Engineering. Recurrent topics in Е. В. Спесивцев's work include Silicon Nanostructures and Photoluminescence (8 papers), Chalcogenide Semiconductor Thin Films (5 papers) and Optical Polarization and Ellipsometry (5 papers). Е. В. Спесивцев is often cited by papers focused on Silicon Nanostructures and Photoluminescence (8 papers), Chalcogenide Semiconductor Thin Films (5 papers) and Optical Polarization and Ellipsometry (5 papers). Е. В. Спесивцев collaborates with scholars based in Russia, United States and Bulgaria. Е. В. Спесивцев's co-authors include V. A. Shvets, Н. Н. Михайлов, S. A. Dvoretsky, Yu. G. Sidorov, В. Н. Кручинин, V. P. Popov, I. V. Antonova, А. В. Калинкин, А. К. Гутаковский and В. Ш. Алиев and has published in prestigious journals such as Thin Solid Films, Applied Physics B and Materials Science and Engineering B.

In The Last Decade

Е. В. Спесивцев

31 papers receiving 302 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Е. В. Спесивцев Russia 10 210 144 112 64 18 34 312
Takanori Suzuki Japan 11 223 1.1× 166 1.2× 188 1.7× 50 0.8× 18 1.0× 39 372
V. G. Mokerov Russia 11 234 1.1× 253 1.8× 89 0.8× 31 0.5× 14 0.8× 76 350
В.А. Тимофеев Russia 13 263 1.3× 289 2.0× 182 1.6× 127 2.0× 14 0.8× 71 472
L. Joulaud France 8 272 1.3× 127 0.9× 137 1.2× 49 0.8× 13 0.7× 10 353
X. Hu United States 9 185 0.9× 281 2.0× 171 1.5× 65 1.0× 42 2.3× 31 413
Z G Wang China 10 163 0.8× 124 0.9× 182 1.6× 51 0.8× 32 1.8× 23 326
R. Gerlach Germany 15 337 1.6× 204 1.4× 161 1.4× 58 0.9× 17 0.9× 26 474
Alain Ranguis France 9 92 0.4× 181 1.3× 218 1.9× 62 1.0× 10 0.6× 27 326
M. Bissiri Italy 13 281 1.3× 394 2.7× 117 1.0× 37 0.6× 15 0.8× 18 466
D. G. Lishan United States 11 255 1.2× 158 1.1× 58 0.5× 48 0.8× 52 2.9× 19 341

Countries citing papers authored by Е. В. Спесивцев

Since Specialization
Citations

This map shows the geographic impact of Е. В. Спесивцев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Е. В. Спесивцев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Е. В. Спесивцев more than expected).

Fields of papers citing papers by Е. В. Спесивцев

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Е. В. Спесивцев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Е. В. Спесивцев. The network helps show where Е. В. Спесивцев may publish in the future.

Co-authorship network of co-authors of Е. В. Спесивцев

This figure shows the co-authorship network connecting the top 25 collaborators of Е. В. Спесивцев. A scholar is included among the top collaborators of Е. В. Спесивцев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Е. В. Спесивцев. Е. В. Спесивцев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Islamov, Damir R., et al.. (2023). Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride. Journal of Experimental and Theoretical Physics. 136(3). 345–352. 1 indexed citations
2.
Кручинин, В. Н., et al.. (2022). Optical and electrochromic properties of thin films of ambipolar polyimides with pendant groups based on thioxanthenone derivatives. Оптика и спектроскопия. 130(14). 2114–2114. 2 indexed citations
3.
Tyschenko, I. E., Е. В. Спесивцев, A. A. Shklyaev, & V. P. Popov. (2022). Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing. Semiconductors. 56(3). 223–229.
4.
Кручинин, В. Н., Timofey V. Perevalov, В. Ш. Алиев, et al.. (2020). Optical Properties of the SiOx (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide. Optics and Spectroscopy. 128(10). 1577–1582. 3 indexed citations
5.
Спесивцев, Е. В., et al.. (2019). Spectral data of refractive index and extinction coefficient for thin films of titanium group metals used for fabrication of optical microstructures. Data in Brief. 28. 104903–104903. 7 indexed citations
6.
Спесивцев, Е. В., et al.. (2019). RECORDING TECHNIQUE OF MASKS ON MULTILAYERED COATINGS (Part 1). Interexpo GEO-Siberia. 8. 47–51.
8.
Кручинин, В. Н., et al.. (2018). Optical Properties of Thin Films of Zinc Phthalocyanines Determined by Spectroscopic Ellipsometry. Optics and Spectroscopy. 125(6). 1019–1024. 5 indexed citations
9.
Кручинин, В. Н., Victor V. Atuchin∥⊥, O. V. Naumova, et al.. (2017). ELLIPSOMETRY, RAMAN SPECTROSCOPY AND SOI- NANOWIRE BIOSENSOR IN DIAGNOSIS OF COLORECTALCANCER. Siberian Journal of Oncology. 16(4). 32–41. 2 indexed citations
10.
11.
Shvets, V. A., Е. В. Спесивцев, M. V. Yakushev, et al.. (2016). Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy. Instruments and Experimental Techniques. 59(6). 857–864. 4 indexed citations
12.
Спесивцев, Е. В., et al.. (2011). Anodization of nanoscale Si layers in silicon-on-insulator structures. Semiconductors. 45(8). 1089–1093. 2 indexed citations
13.
Atuchin∥⊥, Victor V., et al.. (2009). Optical properties of the HfO2 − x N x and TiO2 − x N x films prepared by ion beam sputtering. Optics and Spectroscopy. 106(1). 72–77. 18 indexed citations
14.
Shvets, V. A., et al.. (2004). Analysis of a static scheme of ellipsometric measurements. Optics and Spectroscopy. 97(3). 483–494. 12 indexed citations
15.
Спесивцев, Е. В., et al.. (2004). Time-resolved microellipsometry for rapid thermal processes monitoring. Thin Solid Films. 455-456. 700–704. 4 indexed citations
16.
Naumova, O. V., I. V. Antonova, V. P. Popov, et al.. (2003). Conductance oscillations near bonded interface in the ultra thin silicon-on-insulator layers at room temperature. Microelectronic Engineering. 66(1-4). 457–462. 1 indexed citations
17.
Shvets, V. A., Н. Н. Михайлов, M. V. Yakushev, & Е. В. Спесивцев. (2002). <title>Ellipsometric measurements of the optical constants of solids under impulse heating</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4900. 46–52. 8 indexed citations
18.
Atuchin∥⊥, Victor V., et al.. (2001). Metastable phases in HxLi1-xTaO3 waveguide layers and pure LiTaO3. Applied Physics B. 73(5-6). 559–563. 1 indexed citations
19.
Popov, V. P., et al.. (2000). Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology. Materials Science and Engineering B. 73(1-3). 82–86. 28 indexed citations
20.
Popov, V. P., et al.. (2000). Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon. Materials Science and Engineering B. 73(1-3). 120–123. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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