L. Dózsa

699 total citations
78 papers, 566 citations indexed

About

L. Dózsa is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, L. Dózsa has authored 78 papers receiving a total of 566 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Atomic and Molecular Physics, and Optics, 44 papers in Electrical and Electronic Engineering and 17 papers in Materials Chemistry. Recurrent topics in L. Dózsa's work include Semiconductor materials and interfaces (39 papers), Semiconductor materials and devices (25 papers) and Semiconductor Quantum Structures and Devices (15 papers). L. Dózsa is often cited by papers focused on Semiconductor materials and interfaces (39 papers), Semiconductor materials and devices (25 papers) and Semiconductor Quantum Structures and Devices (15 papers). L. Dózsa collaborates with scholars based in Hungary, Greece and Russia. L. Dózsa's co-authors include C.A. Dimitriadis, Mihály T. Beck, L. Papadimitriou, N. A. Economou, P. A. Coxon, E. Gombia, N. G. Galkin, N. A. Hastas, P. Frigeri and Zs. J. Horváth and has published in prestigious journals such as Journal of the American Chemical Society, Journal of Applied Physics and Inorganic Chemistry.

In The Last Decade

L. Dózsa

72 papers receiving 548 citations

Peers

L. Dózsa

EEE

AMPO

C. V. Reddy India

Charles W. Blackledge United States

Chengjiu Wu United States

Eric B. Lindgren United Kingdom

Charly Mayeux France

Farid Taherkhani Iran

Y. Miyamoto Japan

H. Rhodes United States

Kathryn Lloyd United States

A. Sawada Japan

C. V. Reddy India

L. Dózsa

281 ×0.8

EEE

172 ×0.7

AMPO

202 ×1.2

53 ×0.9

54 ×1.2

Citations per year, relative to L. Dózsa L. Dózsa (= 1×) peers C. V. Reddy

Countries citing papers authored by L. Dózsa

Since Specialization

Citations

This map shows the geographic impact of L. Dózsa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Dózsa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Dózsa more than expected).

Fields of papers citing papers by L. Dózsa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Dózsa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Dózsa. The network helps show where L. Dózsa may publish in the future.

Co-authorship network of co-authors of L. Dózsa

This figure shows the co-authorship network connecting the top 25 collaborators of L. Dózsa. A scholar is included among the top collaborators of L. Dózsa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Dózsa. L. Dózsa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Goroshko, D. L., et al.. (2015). Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites. Electronic Materials Letters. 11(3). 424–428. 4 indexed citations

Galkin, N. G., Konstantin N. Galkin, D. L. Goroshko, et al.. (2015). Non-doped and doped Mg stannide films on Si(111) substrates: Formation, optical, and electrical properties. Japanese Journal of Applied Physics. 54(7S2). 07JC06–07JC06. 6 indexed citations

Galkin, Konstantin N., et al.. (2013). Growth, structure, optical and electrical properties of Si/2D Mg₂Si/Si(111) double heterostructures and Schottky diodes on their base. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(12). 1720–1723. 4 indexed citations

Dózsa, L., et al.. (2011). Scanning tip measurement for identification of point defects. Nanoscale Research Letters. 6(1). 140–140. 4 indexed citations

Dózsa, L., et al.. (2011). Microscopic study of electrical properties of CrSi2 nanocrystals in silicon. Nanoscale Research Letters. 6(1). 209–209. 4 indexed citations

Galkin, N. G., L. Dózsa, E. A. Chusovitin, B. Pécz, & László Dobos. (2010). Migration of CrSi2 nanocrystals through nanopipes in the silicon cap. Applied Surface Science. 256(23). 7331–7334. 8 indexed citations

Basa, P., G. Molnár, László Dobos, et al.. (2008). Formation of Ge Nanocrystals in SiO₂ by Electron Beam Evaporation. Journal of Nanoscience and Nanotechnology. 8(2). 818–822. 8 indexed citations

Galkin, N. G., D. L. Goroshko, E. A. Chusovitin, et al.. (2008). Investigation of Multilayer Silicon Structures with Buried Iron Silicide Nanocrystallites: Growth, Structure, and Properties. Journal of Nanoscience and Nanotechnology. 8(2). 527–534. 3 indexed citations

Dózsa, L., György Molnár, Zs. J. Horváth, et al.. (2004). Investigation of the morphology and electrical characteristics of FeSi2 quantum dots on silicon. Applied Surface Science. 234(1-4). 60–66. 4 indexed citations

10.

Hastas, N. A., C.A. Dimitriadis, L. Dózsa, E. Gombia, & R. Mosca. (2003). Characterization of traps related to InAs quantum-dot growth-induced defects in GaAs by low-frequency noise measurements in reverse-biased Schottky diodes. Journal of Applied Physics. 93(9). 5833–5835. 3 indexed citations

11.

Dózsa, L., et al.. (2002). Point defects generated by direct-wafer bonding of silicon. Journal of Electronic Materials. 31(2). 113–118. 2 indexed citations

12.

Dózsa, L., et al.. (2002). I-V characterisation of resonant tunneling diodes. 2. 653–656. 4 indexed citations

13.

Dózsa, L., Zs. J. Horváth, György Molnár, et al.. (2000). Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si. Semiconductor Science and Technology. 15(7). 653–657. 1 indexed citations

14.

Dózsa, L., et al.. (1997). A Transient Method for Measuring Current–Voltage Characteristics with Negative Differential Resistance Regions. physica status solidi (a). 163(1). R1–R2. 1 indexed citations

15.

Dózsa, L.. (1997). Space charge transients of deep level defects characterised by Auger capture. Solid-State Electronics. 41(4). 585–590. 1 indexed citations

16.

Dózsa, L., et al.. (1995). Homogeneous catalytic reduction of NO in the presence of Co(III) complexes. Reaction Kinetics and Catalysis Letters. 55(1). 121–126. 2 indexed citations

17.

Kathó, Ágnes, et al.. (1984). Kinetics of the reactions of pentacyanonitrosylferrate(II) with mono- and diamino acids. Inorganica Chimica Acta. 83(3). 145–150. 10 indexed citations

18.

Dózsa, L., et al.. (1981). Extended defects in III‐V semiconductor compounds. Kristall und Technik. 16(2). 203–208. 12 indexed citations

19.

Beck, Mihály T., Ágnes Kathó, & L. Dózsa. (1981). Formation of heterocyclic amino acids in the reaction of α,δ- and α,ϵ-diamino acids with nitrosylpentacyanoiron(II). Inorganica Chimica Acta. 55. L55–L56. 12 indexed citations

20.

Dózsa, L., et al.. (1977). Mechanism of the permanganate—nitrite reaction. II. The role of complex formation in the kinetics of the reaction. Inorganica Chimica Acta. 23. 29–34. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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