S. A. Dvoretsky

3.5k citations

250 papers · 2.5k indexed · h-index 25

Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 113
- Topological Materials and Phenomena 97
- Quantum and electron transport phenomena 48
Electrical and Electronic Engineering top 5%
- Advanced Semiconductor Detectors and Materials 162
- Chalcogenide Semiconductor Thin Films 67
- Terahertz technology and applications 28
Materials Chemistry top 5%
- Graphene research and applications 39
- Electronic and Structural Properties of Oxides 26
Condensed Matter Physics top 10%
Spectroscopy top 10%

Co-authors: Н. Н. Михайлов Z. D. Kvon E. B. Olshanetsky Yu. G. Sidorov G. M. Gusev В. С. Варавин D. A. Kozlov M. V. Yakushev
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Physical review. B. (17 papers)Journal of Experimental and Theoretical Physics Letters (17 papers)Semiconductor Science and Technology (11 papers)
Partner nations: Russia Ukraine Poland

In The Last Decade

S. A. Dvoretsky

233 papers receiving 2.5k citations

Peers

Countries citing papers authored by S. A. Dvoretsky

Since Specialization

Citations

This map shows the geographic impact of S. A. Dvoretsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. A. Dvoretsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. A. Dvoretsky more than expected).

Fields of papers citing papers by S. A. Dvoretsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. A. Dvoretsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. A. Dvoretsky. The network helps show where S. A. Dvoretsky may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. A. Dvoretsky, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. A. Dvoretsky Line = papers co-authored together S. A. Dvoretsky links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Diffusion limitation of dark current in MBE HgCdTe based nBn MWIR structure with superlattice barrier layer Journal of Physics D Applied Physics ·А. В. Войцеховский,S. М. Dzyadukh,Takashi Teramura,Н. Н. Михайлов,S. A. Dvoretsky,G. Yu. Sidorov,M. V. Yakushev	2025	0
2	Roles of band gap and Kane electronic dispersion in the terahertz-frequency nonlinear optical response in HgCdTe Physical review. B. ·М.В. Малікова,Elsa Abreu,Mathieu Laurin-Gordon,Samuel Ashong,Matteo Savoini,F. Teppe,S. S. Krishtopenko,Н. Н. Михайлов,S. A. Dvoretsky,Steven L. Johnson	2024	3
3	Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range Applied Physics Letters ·V. V. Rumyantsev,F M S Costa,E. Yu. Serebryakov,K. E. Kudryavtsev,А. А. Дубинов,V. Ya. Aleshkin,Eduardo Vicensotti,Carmen de Barros Correia Dhalia,M. A. Fadeev,А. В. Антонов,Н. Н. Михайлов,S. A. Dvoretsky,V. I. Gavrilenko,F. Teppe,S. V. Morozov	2024	6
4	Growth and characterization of nBn structures based on Cd_xHg_1–xTe for photodetectors in the 3–5 µm spectral range Journal of Optical Technology ·Н. Н. Михайлов,В. С. Варавин,S. A. Dvoretsky,Johanna Beukes,Ahmad Alfan,Donald Adamson	2024	1
5	Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under “Optical Gate” Effect Journal of Experimental and Theoretical Physics Letters ·Linan Shan,S. S. Krishtopenko,V. Ya. Aleshkin,Н. Н. Михайлов,S. A. Dvoretsky,F. Teppe,M. Orlita,V. I. Gavrilenko,А. В. Иконников	2023	1
6	Supercurrent interference in HgTe-wire Josephson junctions Physical Review Research ·W. STOSS,R. Fischer,Michael Barth,В. С. Микрюков,D. A. Kozlov,Н. Н. Михайлов,S. A. Dvoretsky,Christoph Strunk,Cosimo Gorini,Klaus Richter,(unknown)	2023	3
7	Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells Applied Physics Letters ·K. E. Kudryavtsev,炜懿马,M. A. Fadeev,V. V. Rumyantsev,А. А. Дубинов,V. Ya. Aleshkin,Н. Н. Михайлов,S. A. Dvoretsky,V. I. Gavrilenko,S. V. Morozov	2023	1
8	Whispering gallery mode HgCdTe laser operating near 4 μm under Peltier cooling Applied Physics Letters ·Eduardo Vicensotti,M. A. Fadeev,V. V. Rumyantsev,E. Yu. Serebryakov,А. А. Дубинов,V. Ya. Aleshkin,Н. Н. Михайлов,S. A. Dvoretsky,N. S. Gusev,Marwah T. G. Al-Ameri,JC Reijneveld,V. I. Gavrilenko,S. V. Morozov	2023	4
9	Cap Layer Effect on Key Features of Persistent Photoconductivity Spectra in HgTe/CdHgTe Double Quantum Well Heterostructures Photonics ·Yandan Zheng,Zivai Machaka Mare,Eleonai dos Santos Pinheiro,Hyuk Sang Sohn,Johanna Beukes,S. A. Dvoretsky,Н. Н. Михайлов,D. R. Khokhlov,А. В. Иконников	2023	2
10	Energy Spectrum of the Valence Band in HgTe Quantum Wells on the Way from a Two- to Three-Dimensional Topological Insulator Journal of Experimental and Theoretical Physics Letters ·Trine M. Ready,O. É. Rut,A. A. Sherstobitov,S. A. Dvoretsky,Н. Н. Михайлов,V. Ya. Aleshkin	2023	0
11	Local measurement of weak stresses on the surface of HgCdTe/CdTe/ZnTe/GaAs structures using the null method Journal of Applied Physics ·Masaya Nagai,S. A. Dvoretsky,Н. Н. Михайлов,Kadiri Mercy Cincinsoko,Gou Lian	2023	0
12	Stimulated emission in 24–31 μ m range and «Reststrahlen» waveguide in HgCdTe structures grown on GaAs Applied Physics Letters ·V. V. Rumyantsev,А. А. Дубинов,E. Yu. Serebryakov,M. A. Fadeev,V. Ya. Aleshkin,Eduardo Vicensotti,Н. Н. Михайлов,S. A. Dvoretsky,V. I. Gavrilenko,S. V. Morozov	2022	7
13	Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing Nanomaterials ·M. A. Fadeev,А. А. Дубинов,Eduardo Vicensotti,炜懿马,E. Yu. Serebryakov,V. V. Rumyantsev,V. Ya. Aleshkin,V. I. Gavrilenko,Н. Н. Михайлов,S. A. Dvoretsky,S. V. Morozov	2022	2
14	Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures Journal of Applied Physics ·V. Ya. Aleshkin,U. Schiller,K. E. Kudryavtsev,А. А. Дубинов,E. Yu. Serebryakov,M. A. Fadeev,G. Nervi,Н. Н. Михайлов,S. A. Dvoretsky,F. Teppe,V. I. Gavrilenko,S. V. Morozov	2021	14
15	Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers Nanomaterials ·V. V. Rumyantsev,Eduardo Vicensotti,Linan Shan,Maryam Gharedaghloo,Vladimir Mikhailovskii,Mihaela-Brânduşa Tudose,А. В. Иконников,M.S. Kayacan,M. Bonneau,E. Yu. Serebryakov,M. A. Fadeev,Ahmad Alfan,V. Ya. Aleshkin,Н. Н. Михайлов,S. A. Dvoretsky,M. Potemski,M. Orlita,V. I. Gavrilenko,S. V. Morozov	2021	6
16	Terahertz Emission from HgCdTe QWs under Long-Wavelength Optical Pumping Journal of Infrared Millimeter and Terahertz Waves ·V. V. Rumyantsev,M. A. Fadeev,V. Ya. Aleshkin,А. А. Дубинов,E. Yu. Serebryakov,А. В. Антонов,林叶青,Carmen de Barros Correia Dhalia,V. I. Gavrilenko,Z. F. Krasil’nik,Carlo Sirtori,F. Teppe,Н. Н. Михайлов,S. A. Dvoretsky,S. V. Morozov	2020	5
17	Admittance of metal–insulator–semiconductor devices based on HgCdTe nBn structures Semiconductor Science and Technology ·А. В. Войцеховский,S. N. Nesmelov,S. М. Dzyadukh,S. A. Dvoretsky,Н. Н. Михайлов,G. Yu. Sidorov,M. V. Yakushev	2020	8
18	Electrical and microscopic characterization of p ⁺ - type layers formed in HgCdTe by arsenic implantation Semiconductor Science and Technology ·І. І. Іжнін,K. D. Mynbaev,А. В. Войцеховский,S. N. Nesmelov,S. М. Dzyadukh,Gunilla Eklund,В. С. Варавин,S. A. Dvoretsky,D. V. Marin,M. V. Yakushev,Z. Świątek,J. Morgiel,Seda Çetin	2020	3
19	Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al ₂ O ₃ passivation Journal of Physics D Applied Physics ·А. В. Войцеховский,S. N. Nesmelov,S. М. Dzyadukh,S. A. Dvoretsky,Н. Н. Михайлов,G. Yu. Sidorov,M. V. Yakushev	2019	16
20	<title>HgCdTe epilayers on GaAs: growth and devices</title> Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·В. С. Варавин,H. Miao,S. A. Dvoretsky,Н. Н. Михайлов,Arian Rahimi,Seunghyeok Jeong,М. Вакуленко,M. V. Yakushev,A. L. Aseev	2003	42

About S. A. Dvoretsky

S. A. Dvoretsky is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 250 papers that have together received 2.5k indexed citations. Recurring topics across this work include Advanced Semiconductor Detectors and Materials (162 papers), Semiconductor Quantum Structures and Devices (113 papers), Topological Materials and Phenomena (97 papers), Chalcogenide Semiconductor Thin Films (67 papers), Quantum and electron transport phenomena (48 papers), Graphene research and applications (39 papers), Terahertz technology and applications (28 papers) and Electronic and Structural Properties of Oxides (26 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (2.2k citations), Electrical and Electronic Engineering (1.4k citations) and Materials Chemistry (1.1k citations). S. A. Dvoretsky has collaborated with scholars based in Russia, Ukraine and Poland. Frequent co-authors include Н. Н. Михайлов, Z. D. Kvon, Н. Н. Михайлов, E. B. Olshanetsky, Yu. G. Sidorov, G. M. Gusev, В. С. Варавин, D. A. Kozlov, Н. Н. Михайлов and M. V. Yakushev. Their work appears in journals such as Physical review. B., Journal of Experimental and Theoretical Physics Letters, Semiconductor Science and Technology, Physical Review B and Applied Physics Letters.

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