S. A. Dvoretsky

3.5k total citations
250 papers, 2.5k citations indexed

About

S. A. Dvoretsky is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, S. A. Dvoretsky has authored 250 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 202 papers in Atomic and Molecular Physics, and Optics, 175 papers in Electrical and Electronic Engineering and 77 papers in Materials Chemistry. Recurrent topics in S. A. Dvoretsky's work include Advanced Semiconductor Detectors and Materials (162 papers), Semiconductor Quantum Structures and Devices (113 papers) and Topological Materials and Phenomena (97 papers). S. A. Dvoretsky is often cited by papers focused on Advanced Semiconductor Detectors and Materials (162 papers), Semiconductor Quantum Structures and Devices (113 papers) and Topological Materials and Phenomena (97 papers). S. A. Dvoretsky collaborates with scholars based in Russia, Ukraine and Poland. S. A. Dvoretsky's co-authors include Н. Н. Михайлов, Z. D. Kvon, Н. Н. Михайлов, E. B. Olshanetsky, Yu. G. Sidorov, G. M. Gusev, В. С. Варавин, D. A. Kozlov, Н. Н. Михайлов and M. V. Yakushev and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. A. Dvoretsky

233 papers receiving 2.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. A. Dvoretsky Russia 25 2.2k 1.4k 1.1k 163 130 250 2.5k
Frank Szmulowicz United States 24 1.5k 0.7× 1.4k 1.0× 394 0.4× 105 0.6× 157 1.2× 147 1.9k
D. Lubyshev United States 25 1.6k 0.7× 2.5k 1.8× 572 0.5× 128 0.8× 130 1.0× 136 2.8k
S. N. Danilov Germany 21 1.4k 0.6× 841 0.6× 490 0.5× 252 1.5× 47 0.4× 100 1.7k
T. Ashley United Kingdom 28 1.7k 0.8× 1.8k 1.3× 356 0.3× 366 2.2× 193 1.5× 130 2.3k
Philippe Christol France 16 866 0.4× 674 0.5× 279 0.3× 158 1.0× 59 0.5× 49 1.1k
J. R. Meyer United States 22 966 0.4× 1.0k 0.7× 351 0.3× 149 0.9× 156 1.2× 80 1.4k
J. P. Prineas United States 22 1.4k 0.6× 1.0k 0.7× 185 0.2× 75 0.5× 223 1.7× 90 1.6k
A. Stintz United States 36 3.5k 1.6× 3.5k 2.6× 911 0.9× 134 0.8× 397 3.1× 149 4.1k
B. Brar United States 24 1.3k 0.6× 1.6k 1.2× 431 0.4× 250 1.5× 61 0.5× 100 1.9k
E. H. Aifer United States 26 1.4k 0.7× 1.5k 1.1× 393 0.4× 229 1.4× 433 3.3× 75 2.0k

Countries citing papers authored by S. A. Dvoretsky

Since Specialization
Citations

This map shows the geographic impact of S. A. Dvoretsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. A. Dvoretsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. A. Dvoretsky more than expected).

Fields of papers citing papers by S. A. Dvoretsky

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. A. Dvoretsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. A. Dvoretsky. The network helps show where S. A. Dvoretsky may publish in the future.

Co-authorship network of co-authors of S. A. Dvoretsky

This figure shows the co-authorship network connecting the top 25 collaborators of S. A. Dvoretsky. A scholar is included among the top collaborators of S. A. Dvoretsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. A. Dvoretsky. S. A. Dvoretsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rumyantsev, V. V., K. E. Kudryavtsev, А. А. Дубинов, et al.. (2024). Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range. Applied Physics Letters. 124(16). 6 indexed citations
2.
Михайлов, Н. Н., et al.. (2024). Growth and characterization of nBn structures based on CdxHg1–xTe for photodetectors in the 3–5  µm spectral range. Journal of Optical Technology. 91(2). 105–105. 1 indexed citations
3.
Abreu, Elsa, Matteo Savoini, F. Teppe, et al.. (2024). Roles of band gap and Kane electronic dispersion in the terahertz-frequency nonlinear optical response in HgCdTe. Physical review. B.. 110(9). 3 indexed citations
4.
Dvoretsky, S. A., et al.. (2023). Cap Layer Effect on Key Features of Persistent Photoconductivity Spectra in HgTe/CdHgTe Double Quantum Well Heterostructures. Photonics. 10(8). 877–877. 2 indexed citations
5.
Fadeev, M. A., V. V. Rumyantsev, А. А. Дубинов, et al.. (2023). Whispering gallery mode HgCdTe laser operating near 4 μm under Peltier cooling. Applied Physics Letters. 123(16). 4 indexed citations
6.
Dvoretsky, S. A., et al.. (2023). Local measurement of weak stresses on the surface of HgCdTe/CdTe/ZnTe/GaAs structures using the null method. Journal of Applied Physics. 134(18).
7.
Krishtopenko, S. S., V. Ya. Aleshkin, Н. Н. Михайлов, et al.. (2023). Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under “Optical Gate” Effect. Journal of Experimental and Theoretical Physics Letters. 118(11). 867–874. 1 indexed citations
8.
Fischer, R., Michael Barth, D. A. Kozlov, et al.. (2023). Supercurrent interference in HgTe-wire Josephson junctions. Physical Review Research. 5(4). 3 indexed citations
9.
Kudryavtsev, K. E., M. A. Fadeev, V. V. Rumyantsev, et al.. (2023). Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells. Applied Physics Letters. 123(18). 1 indexed citations
10.
Rumyantsev, V. V., А. А. Дубинов, M. A. Fadeev, et al.. (2023). Generation of Long-Wavelength Stimulated Emission in HgCdTe Quantum Wells with an Increased Auger Recombination Threshold. Journal of Experimental and Theoretical Physics Letters. 118(5). 309–314. 2 indexed citations
11.
Михайлов, Н. Н., et al.. (2023). Interband Electron Transitions Energy in Multiple HgCdTe Quantum Wells at Room Temperature. Photonics. 10(4). 430–430. 2 indexed citations
12.
Kozlov, D. A., et al.. (2023). Transport properties of a 1000 nm HgTe film: the interplay of surface and bulk carriers. Journal of Physics Condensed Matter. 35(34). 345302–345302. 2 indexed citations
13.
Rumyantsev, V. V., А. А. Дубинов, M. A. Fadeev, et al.. (2022). Stimulated emission in 24–31 μ m range and «Reststrahlen» waveguide in HgCdTe structures grown on GaAs. Applied Physics Letters. 121(18). 7 indexed citations
14.
Гудина, С. В., et al.. (2022). Rashba Spin Splitting in HgCdTe Quantum Wells with Inverted and Normal Band Structures. Nanomaterials. 12(7). 1238–1238. 2 indexed citations
15.
Fadeev, M. A., А. А. Дубинов, V. V. Rumyantsev, et al.. (2022). Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing. Nanomaterials. 12(24). 4398–4398. 2 indexed citations
16.
Rumyantsev, V. V., Vladimir Mikhailovskii, А. В. Иконников, et al.. (2021). Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers. Nanomaterials. 11(7). 1855–1855. 6 indexed citations
17.
Aleshkin, V. Ya., K. E. Kudryavtsev, А. А. Дубинов, et al.. (2021). Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures. Journal of Applied Physics. 129(13). 14 indexed citations
18.
Rumyantsev, V. V., M. A. Fadeev, V. Ya. Aleshkin, et al.. (2020). Terahertz Emission from HgCdTe QWs under Long-Wavelength Optical Pumping. Journal of Infrared Millimeter and Terahertz Waves. 41(7). 750–757. 5 indexed citations
19.
Kozlov, D. A., et al.. (2014). Transport Properties of a 3D Topological Insulator based on a Strained High-Mobility HgTe Film. Physical Review Letters. 112(19). 196801–196801. 69 indexed citations
20.
Варавин, В. С., et al.. (2003). <title>HgCdTe epilayers on GaAs: growth and devices</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 381–395. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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