G. A. Kachurin

625 total citations
59 papers, 494 citations indexed

About

G. A. Kachurin is a scholar working on Computational Mechanics, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, G. A. Kachurin has authored 59 papers receiving a total of 494 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Computational Mechanics, 45 papers in Materials Chemistry and 43 papers in Electrical and Electronic Engineering. Recurrent topics in G. A. Kachurin's work include Ion-surface interactions and analysis (47 papers), Silicon Nanostructures and Photoluminescence (44 papers) and Semiconductor materials and devices (16 papers). G. A. Kachurin is often cited by papers focused on Ion-surface interactions and analysis (47 papers), Silicon Nanostructures and Photoluminescence (44 papers) and Semiconductor materials and devices (16 papers). G. A. Kachurin collaborates with scholars based in Russia, Germany and France. G. A. Kachurin's co-authors include В. А. Володин, I. E. Tyschenko, R.A. Yankov, К. С. Журавлев, W. Skorupa, A.K. Gutakovsky, D. V. Marin, D. I. Tetelbaum, M.-O. Ruault and V. G. Kesler and has published in prestigious journals such as Journal of Applied Physics, Nanotechnology and Applied Physics A.

In The Last Decade

G. A. Kachurin

55 papers receiving 471 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. A. Kachurin Russia 13 401 342 227 157 90 59 494
H. Coffin France 10 394 1.0× 396 1.2× 97 0.4× 187 1.2× 83 0.9× 18 504
I. E. Tyschenko Russia 11 558 1.4× 468 1.4× 185 0.8× 250 1.6× 100 1.1× 75 636
R. Madelon France 12 444 1.1× 396 1.2× 75 0.3× 166 1.1× 122 1.4× 39 522
M. D. Efremov Russia 13 325 0.8× 320 0.9× 65 0.3× 146 0.9× 184 2.0× 63 471
J. Margail France 15 193 0.5× 695 2.0× 95 0.4× 76 0.5× 84 0.9× 43 727
Akito Hara Japan 15 451 1.1× 835 2.4× 127 0.6× 176 1.1× 136 1.5× 92 882
B. de Mauduit France 13 198 0.5× 637 1.9× 172 0.8× 57 0.4× 309 3.4× 34 689
P. Danesh Bulgaria 11 218 0.5× 317 0.9× 53 0.2× 78 0.5× 53 0.6× 60 374
Liu Xiangna China 6 421 1.0× 393 1.1× 40 0.2× 161 1.0× 52 0.6× 21 469
K. S. Min United States 6 900 2.2× 666 1.9× 159 0.7× 572 3.6× 163 1.8× 14 950

Countries citing papers authored by G. A. Kachurin

Since Specialization
Citations

This map shows the geographic impact of G. A. Kachurin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. A. Kachurin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. A. Kachurin more than expected).

Fields of papers citing papers by G. A. Kachurin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. A. Kachurin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. A. Kachurin. The network helps show where G. A. Kachurin may publish in the future.

Co-authorship network of co-authors of G. A. Kachurin

This figure shows the co-authorship network connecting the top 25 collaborators of G. A. Kachurin. A scholar is included among the top collaborators of G. A. Kachurin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. A. Kachurin. G. A. Kachurin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kachurin, G. A., et al.. (2014). Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions. Optoelectronics Instrumentation and Data Processing. 50(3). 292–297. 2 indexed citations
2.
Kachurin, G. A., et al.. (2011). Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 282. 68–72. 10 indexed citations
3.
Kachurin, G. A., et al.. (2011). Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions. Semiconductors. 45(10). 1311–1316. 1 indexed citations
4.
Kachurin, G. A., et al.. (2008). Formation of light-emitting Si nanostructures in SiO2by pulsed anneals. Nanotechnology. 19(35). 355305–355305. 18 indexed citations
5.
Kachurin, G. A., et al.. (2008). Effect of high-power nanosecond and femtosecond laser pulses on silicon nanostructures. Semiconductors. 42(2). 183–187. 2 indexed citations
6.
Marin, D. V., В. А. Володин, J. Jędrzejewski, et al.. (2008). SiO x layer formation during plasma sputtering of Si and SiO2 targets. Semiconductors. 42(6). 731–736. 8 indexed citations
7.
Володин, В. А., et al.. (2007). Phase transitions in a-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects. Journal of Experimental and Theoretical Physics Letters. 86(2). 119–122. 11 indexed citations
8.
Kachurin, G. A., et al.. (2002). Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions. Semiconductors. 36(6). 647–651. 5 indexed citations
9.
Kachurin, G. A., M.-O. Ruault, A.K. Gutakovsky, et al.. (1999). Light particle irradiation effects in Si nanocrystals. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 147(1-4). 356–360. 33 indexed citations
10.
Kachurin, G. A., К. С. Журавлев, I. E. Tyschenko, et al.. (1998). Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions. Semiconductors. 32(11). 1222–1228. 10 indexed citations
11.
Kachurin, G. A., I. E. Tyschenko, L. Rebohle, et al.. (1998). Short-wavelength photoluminescence of SiO2 layers implanted with high doses of Si+, Ge+, and Ar+ ions. Semiconductors. 32(4). 392–396. 3 indexed citations
12.
Kachurin, G. A., I. E. Tyschenko, К. С. Журавлев, et al.. (1997). Visible and near-infrared luminescence from silicon nanostructures formed by ion implantation and pulse annealing. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 122(3). 571–574. 56 indexed citations
13.
Antonova, I. V., et al.. (1996). Formation of electrically active centers beyond the stopping ranges of ions implanted in heated silicon. Semiconductors. 30(11). 1051–1054. 1 indexed citations
14.
Kachurin, G. A., et al.. (1994). Neutralization of boron in silicon by high-temperature bombardment with argon ions. Semiconductors. 28(3). 313–316. 1 indexed citations
15.
Kachurin, G. A., I. E. Tyschenko, & A. Tybulewicz. (1993). Behavior of boron and nitrogen in a surface layer of silicon during synthesis of buried layers by implantation of N+ ions. Semiconductors. 27(7). 658–662. 1 indexed citations
16.
Kachurin, G. A., et al.. (1993). Roles of implantation temperature and ion dose rate in ion-beam synthesis of buried Si3N3 layers. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 74(3). 399–404. 5 indexed citations
17.
Kachurin, G. A., I. E. Tyschenko, & Л. И. Федина. (1992). High-temperature ion implantation in silicon. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 68(1-4). 323–330. 7 indexed citations
18.
Kachurin, G. A., et al.. (1990). Large Area SOI Films Crystallized by Nanosecond Laser Pulses. physica status solidi (a). 117(1). K29–K32. 1 indexed citations
19.
Kachurin, G. A., et al.. (1988). Redistribution of boron in silicon by high-temperature irradiation with heavy ions. physica status solidi (a). 109(1). 141–148. 6 indexed citations
20.
Kachurin, G. A., et al.. (1980). Crystallization of ion implanted silicon layers by the nanosecond laser pulses. Radiation Effects. 48(1-4). 191–194. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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