J. E. Van Nostrand

1.6k total citations
44 papers, 1.3k citations indexed

About

J. E. Van Nostrand is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, J. E. Van Nostrand has authored 44 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 20 papers in Condensed Matter Physics. Recurrent topics in J. E. Van Nostrand's work include GaN-based semiconductor devices and materials (18 papers), ZnO doping and properties (13 papers) and Semiconductor Quantum Structures and Devices (13 papers). J. E. Van Nostrand is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), ZnO doping and properties (13 papers) and Semiconductor Quantum Structures and Devices (13 papers). J. E. Van Nostrand collaborates with scholars based in United States, Russia and Taiwan. J. E. Van Nostrand's co-authors include David G. Cahill, S. Jay Chey, D. C. Look, М. В. Чукичев, Ya. I. Alivov, B. M. Ataev, J. E. Greene, Qianghua Xie, Jason R. Jenny and D. C. Reynolds and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. E. Van Nostrand

44 papers receiving 1.3k citations

Peers

J. E. Van Nostrand
B. A. Davidson United States
S.E. Babcock United States
J.‐T. Zettler Germany
M. Hanke Germany
R. M. Biefeld United States
J. Walker United States
Hisao Saito Japan
N. N. Faleev United States
E. Carpene Germany
Markus Pristovsek Germany
B. A. Davidson United States
J. E. Van Nostrand
Citations per year, relative to J. E. Van Nostrand J. E. Van Nostrand (= 1×) peers B. A. Davidson

Countries citing papers authored by J. E. Van Nostrand

Since Specialization
Citations

This map shows the geographic impact of J. E. Van Nostrand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Van Nostrand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Van Nostrand more than expected).

Fields of papers citing papers by J. E. Van Nostrand

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Van Nostrand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Van Nostrand. The network helps show where J. E. Van Nostrand may publish in the future.

Co-authorship network of co-authors of J. E. Van Nostrand

This figure shows the co-authorship network connecting the top 25 collaborators of J. E. Van Nostrand. A scholar is included among the top collaborators of J. E. Van Nostrand based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. E. Van Nostrand. J. E. Van Nostrand is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Nostrand, J. E. Van, et al.. (2010). Local transport properties, morphology and microstructure of ZnO decorated SiO2nanoparticles. Nanotechnology. 21(41). 415602–415602. 9 indexed citations
3.
Albrecht, John D., et al.. (2005). Electrical and Magnetic Characteristics of MBEGrown GaMnN. Journal of Superconductivity. 18(1). 69–73. 6 indexed citations
4.
Hengehold, R. L., et al.. (2001). Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5. Journal of Crystal Growth. 227-228. 458–465. 5 indexed citations
5.
Xie, Qianghua, Jeff L. Brown, Robert Jones, J. E. Van Nostrand, & Kevin Leedy. (2000). Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening. Applied Physics Letters. 76(21). 3082–3084. 19 indexed citations
6.
Nostrand, J. E. Van, et al.. (2000). Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy. Journal of Applied Physics. 87(12). 8766–8772. 30 indexed citations
7.
Xie, Qianghua & J. E. Van Nostrand. (1999). Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(2). 342–346. 8 indexed citations
8.
Xie, Qianghua, J. E. Van Nostrand, Robert Jones, J. R. Sizelove, & D. C. Look. (1999). Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2. Journal of Crystal Growth. 207(4). 255–265. 20 indexed citations
9.
Smith, Gary A., et al.. (1999). UV Schottky-barrier detector development for possible Air Force applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3629. 184–184. 3 indexed citations
10.
Nostrand, J. E. Van, et al.. (1999). Cathodoluminescence, microstructure, and morphology of tensile-strained AlxGa(1−x)N epitaxial films grown by gas source molecular beam epitaxy. Journal of Applied Physics. 86(6). 3120–3128. 4 indexed citations
11.
Xie, Qianghua, Jeff L. Brown, Robert Jones, & J. E. Van Nostrand. (1999). Shape stabilization and size equalization of InGaAs self-organized quantum dots. Journal of Electronic Materials. 28(12). L42–L45. 6 indexed citations
12.
Fang, Z.-Q., et al.. (1999). Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy. Journal of Electronic Materials. 28(8). L13–L16. 8 indexed citations
13.
Xie, Qianghua, J. E. Van Nostrand, Jerram L. Brown, & C. E. Stutz. (1999). Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure. Journal of Applied Physics. 86(1). 329–337. 61 indexed citations
14.
Nostrand, J. E. Van, David G. Cahill, I. Petrov, & J. E. Greene. (1998). Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films. Journal of Applied Physics. 83(2). 1096–1102. 13 indexed citations
15.
Nostrand, J. E. Van, S. Jay Chey, & David G. Cahill. (1998). Low-temperature growth morphology of singular and vicinal Ge(001). Physical review. B, Condensed matter. 57(19). 12536–12543. 54 indexed citations
16.
Reynolds, D. C., D. C. Look, B. Jogai, et al.. (1998). Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO. Solid State Communications. 106(10). 701–704. 129 indexed citations
17.
Jenny, Jason R., J. E. Van Nostrand, & R. Kaspi. (1998). The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN. Applied Physics Letters. 72(1). 85–87. 19 indexed citations
18.
Bellon, Pascal, S. Jay Chey, J. E. Van Nostrand, et al.. (1995). Surface damage produced by 20 keV Ga bombardment of Ge(001). Surface Science. 339(1-2). 135–141. 23 indexed citations
19.
Chey, S. Jay, J. E. Van Nostrand, & David G. Cahill. (1995). Surface morphology of Ge(001) during etching by low-energy ions. Physical review. B, Condensed matter. 52(23). 16696–16701. 44 indexed citations
20.
Tao, Meng, A. Botchkarev, J. Reed, et al.. (1995). Improved Si3N4/Si/GaAs metal-insulator-semiconductor interfaces by in situ anneal of the as-deposited Si. Journal of Applied Physics. 77(8). 4113–4115. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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