J. E. Van Nostrand

1.6k citations

44 papers · 1.3k · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 24
- Semiconductor materials and devices 10
- Advanced Semiconductor Detectors and Materials 8
Atomic and Molecular Physics, and Optics 21
- Semiconductor Quantum Structures and Devices 13
- Surface and Thin Film Phenomena 5

Co-authors: David G. Cahill (13 shared papers)S. Jay Chey (10 shared papers)D. C. Look (2 shared papers)М. В. Чукичев (1 shared paper)B. M. Ataev (1 shared paper)Ya. I. Alivov (1 shared paper)J. E. Greene (1 shared paper)Qianghua Xie (7 shared papers)
Journals: Applied Physics Letters (6 papers)Journal of Applied Physics (6 papers)Journal of Electronic Materials (4 papers)Journal of Crystal Growth (3 papers)Physical review. B, Condensed matter (3 papers)
Partner nations: United States Russia Taiwan

In The Last Decade

J. E. Van Nostrand

44 papers receiving 1.3k citations

Peers

Countries citing papers authored by J. E. Van Nostrand

Since Specialization

Citations

This map shows the geographic impact of J. E. Van Nostrand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Van Nostrand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Van Nostrand more than expected).

Fields of papers citing papers by J. E. Van Nostrand

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Van Nostrand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Van Nostrand. The network helps show where J. E. Van Nostrand may publish in the future.

Co-authors

The 25 scholars most cited alongside J. E. Van Nostrand, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. E. Van Nostrand Line = papers co-authored together J. E. Van Nostrand links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 44 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes Applied Physics Letters ·Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, М. В. Чукичев, B. M. Ataev	2003	392
2	Surface Morphology during Multilayer Epitaxial Growth of Ge(001) Physical Review Letters ·J. E. Van Nostrand, S. Jay Chey, M-A Hasan, David G. Cahill, J. E. Greene	1995	174
3	Source of the yellow luminescence band in GaN grown by gas-source molecular beam epitaxy and the green luminescence band in single crystal ZnO Solid State Communications ·D. C. Reynolds, D. C. Look, B. Jogai, J. E. Van Nostrand, R. Jones, Jason R. Jenny	1998	129
4	Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates Applied Physics Letters ·Jun Yang, A. Lunev, G. Simin, A. Chitnis, M. Shatalov, M. Asif Khan, J. E. Van Nostrand, R. Gaška	2000	99
5	Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure Journal of Applied Physics ·Qianghua Xie, J. E. Van Nostrand, Jerram L. Brown, C. E. Stutz	1999	61
6	Low-temperature growth morphology of singular and vicinal Ge(001) Physical review. B, Condensed matter ·J. E. Van Nostrand, S. Jay Chey, David G. Cahill	1998	54
7	Surface morphology of Ge(001) during etching by low-energy ions Physical review. B, Condensed matter ·S. Jay Chey, J. E. Van Nostrand, David G. Cahill	1995	44
8	Molecular beam epitaxial growth of high-quality GaN nanocolumns Journal of Crystal Growth ·J. E. Van Nostrand, Kent L. Averett, Rebecca Cortez, John Boeckl, C. E. Stutz, Norman A. Sanford, Albert V. Davydov, John D. Albrecht	2006	32
9	Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy Journal of Applied Physics ·J. E. Van Nostrand, J. S. Solomon, A. Saxler, Q.-H. Xie, D. C. Reynolds, D. C. Look	2000	30
10	Dynamics of Rough Ge(001) Surfaces at Low Temperatures Physical Review Letters ·S. Jay Chey, J. E. Van Nostrand, David G. Cahill	1996	26
11	Surface damage produced by 20 keV Ga bombardment of Ge(001) Surface Science ·Pascal Bellon, S. Jay Chey, J. E. Van Nostrand, Mai Ghaly, David G. Cahill, R. S. Averback	1995	23
12	Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2 Journal of Crystal Growth ·Qianghua Xie, J. E. Van Nostrand, Robert Jones, J. R. Sizelove, D. C. Look	1999	20
13	Growth of vertically self-organized InGaAs quantum dots with narrow inhomogeneous broadening Applied Physics Letters ·Qianghua Xie, Jeff L. Brown, Robert Jones, J. E. Van Nostrand, Kevin Leedy	2000	19
14	The effect of Al on Ga desorption during gas source-molecular beam epitaxial growth of AlGaN Applied Physics Letters ·Jason R. Jenny, J. E. Van Nostrand, R. Kaspi	1998	19
15	Compositional ordering in SiGe alloy thin films Physical review. B, Condensed matter ·K.L. Whiteaker, Ian Robinson, J. E. Van Nostrand, David G. Cahill	1998	15
16	Epitaxial overgrowth of GaN nanocolumns Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Kent L. Averett, J. E. Van Nostrand, John D. Albrecht, Y. S. Chen, C. C. Yang	2007	15
17	Growth of II-IV-V2 chalcopyrite nitrides by molecular beam epitaxy Journal of Electronic Materials ·J. E. Van Nostrand, John D. Albrecht, Rebecca Cortez, Kevin Leedy, Benedict Johnson, Matthew J. O’Keefe	2005	14
18	Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films Journal of Applied Physics ·J. E. Van Nostrand, David G. Cahill, I. Petrov, J. E. Greene	1998	13
19	Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy Surface Science ·J. E. Van Nostrand, S. Jay Chey, David G. Cahill, A. Botchkarev, H. Morkoç̌	1996	13
20	Fabrication and analysis of GaN nanorods grown by MBE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Norman A. Sanford, Lawrence H. Robins, Matthew H. Gray, Youn‐Seon Kang, J. E. Van Nostrand, C. E. Stutz, Rebecca Cortez, Albert V. Davydov, A. J. Shapiro, Igor Levin, Alexana Roshko	2005	12

About J. E. Van Nostrand

J. E. Van Nostrand is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 44 papers that have together received 1.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (18 papers), Semiconductor Quantum Structures and Devices (13 papers), ZnO doping and properties (13 papers), Ga2O3 and related materials (12 papers), Semiconductor materials and devices (10 papers), Advanced Semiconductor Detectors and Materials (8 papers), Surface and Thin Film Phenomena (5 papers) and Electron and X-Ray Spectroscopy Techniques (4 papers). The work is most often cited by research in Condensed Matter Physics (595 citations), Electronic, Optical and Magnetic Materials (524 citations), Materials Chemistry (813 citations), Atomic and Molecular Physics, and Optics (382 citations) and Electrical and Electronic Engineering (605 citations). J. E. Van Nostrand has collaborated with scholars based in United States, Russia and Taiwan. Frequent co-authors include David G. Cahill, S. Jay Chey, D. C. Look, М. В. Чукичев, B. M. Ataev, Ya. I. Alivov, J. E. Greene, Qianghua Xie, Jason R. Jenny and D. C. Look. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, Journal of Crystal Growth and Physical review. B, Condensed matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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J. E. Van Nostrand

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