D. V. Lang

1.0k total citations
25 papers, 876 citations indexed

About

D. V. Lang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, D. V. Lang has authored 25 papers receiving a total of 876 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 9 papers in Materials Chemistry. Recurrent topics in D. V. Lang's work include Semiconductor materials and devices (14 papers), GaN-based semiconductor devices and materials (10 papers) and Metal and Thin Film Mechanics (5 papers). D. V. Lang is often cited by papers focused on Semiconductor materials and devices (14 papers), GaN-based semiconductor devices and materials (10 papers) and Metal and Thin Film Mechanics (5 papers). D. V. Lang collaborates with scholars based in United States, Germany and Austria. D. V. Lang's co-authors include A. M. Sergent, Julia W. P. Hsu, R. J. Molnar, Michael J. Manfra, L. N. Pfeiffer, Shachar Richter, R. N. Kleiman, S. N. G. Chu, M. L. Steigerwald and R. B. van Dover and has published in prestigious journals such as Reviews of Modern Physics, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. V. Lang

24 papers receiving 845 citations

Peers

D. V. Lang
Sg. Fujita Japan
Shinji Fujieda Japan
P. H. Jefferson United Kingdom
L. Görgens Germany
S.J. Chang Taiwan
А. В. Мудрый Belarus
Z.-Q. Fang United States
P. M. Bridger United States
Ziguang Ma China
S. Nagai Japan
Sg. Fujita Japan
D. V. Lang
Citations per year, relative to D. V. Lang D. V. Lang (= 1×) peers Sg. Fujita

Countries citing papers authored by D. V. Lang

Since Specialization
Citations

This map shows the geographic impact of D. V. Lang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. V. Lang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. V. Lang more than expected).

Fields of papers citing papers by D. V. Lang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. V. Lang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. V. Lang. The network helps show where D. V. Lang may publish in the future.

Co-authorship network of co-authors of D. V. Lang

This figure shows the co-authorship network connecting the top 25 collaborators of D. V. Lang. A scholar is included among the top collaborators of D. V. Lang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. V. Lang. D. V. Lang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Qian, Yali Ma, Ting Yang, et al.. (2025). Triggered new active sites and fast charge transfer in TiO2@N-doped MoS2 for ppb-level ethanol detection at low temperatures via heterogeneous interface construction. Ceramics International. 51(25). 43836–43847. 1 indexed citations
2.
Hsu, Julia W. P., Nils Weimann, Michael J. Manfra, et al.. (2003). Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy. Applied Physics Letters. 83(22). 4559–4561. 5 indexed citations
3.
Weimann, Nils, Michael J. Manfra, Julia W. P. Hsu, et al.. (2003). AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates. 33–33. 3 indexed citations
4.
Manfra, Michael J., Nils Weimann, Julia W. P. Hsu, et al.. (2002). High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy. Journal of Applied Physics. 92(1). 338–345. 72 indexed citations
5.
Chang, Jane P., M. L. Steigerwald, R. M. Fleming, et al.. (2002). Material and electrical characterization of carbon-doped Ta2O5 films for embedded dynamic random access memory applications. Journal of Applied Physics. 91(1). 308–316. 39 indexed citations
6.
Hsu, Julia W. P., D. V. Lang, Shachar Richter, et al.. (2001). Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy. Journal of Electronic Materials. 30(3). 115–122. 9 indexed citations
7.
Hsu, Julia W. P., Manyalibo J. Matthews, David Abusch-Magder, et al.. (2001). Spatial variation of electrical properties in lateral epitaxially overgrown GaN. Applied Physics Letters. 79(6). 761–763. 12 indexed citations
8.
Fleming, R. M., C. M. Varma, D. V. Lang, et al.. (2001). Coulomb glass origin of defect-induced dielectric loss in thin-film oxides. Applied Physics Letters. 78(25). 4016–4018. 2 indexed citations
9.
Cho, Byeong‐Ok, Jane P. Chang, M. L. Steigerwald, et al.. (2001). Material and Electrical Characterization of Carbon-Doped Ta2O5 Films for Embedded DRAM Applications. MRS Proceedings. 672. 1 indexed citations
10.
Hsu, Julia W. P., Michael J. Manfra, D. V. Lang, et al.. (2001). Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes. Applied Physics Letters. 78(12). 1685–1687. 250 indexed citations
11.
Hsu, Julia W. P., Michael J. Manfra, D. V. Lang, et al.. (2001). Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures. Journal of Electronic Materials. 30(3). 110–114. 15 indexed citations
12.
Fleming, R. M., D. V. Lang, Chris Jones, et al.. (2000). Defect dominated charge transport in amorphous Ta2O5 thin films. Journal of Applied Physics. 88(2). 850–862. 201 indexed citations
13.
Wang, W. I., et al.. (2000). Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1472–1475. 3 indexed citations
14.
Hsu, Julia W. P., D. V. Lang, Shachar Richter, et al.. (2000). Nature of the highly conducting interfacial layer in GaN films. Applied Physics Letters. 77(18). 2873–2875. 32 indexed citations
15.
Brinkman, W. F. & D. V. Lang. (1999). Physics and the communications industry. Reviews of Modern Physics. 71(2). S480–S488. 4 indexed citations
16.
Alam, M. Afshar, R. People, E. D. Isaacs, et al.. (1999). Simulation and characterization of the selective area growth process. Applied Physics Letters. 74(18). 2617–2619. 42 indexed citations
17.
Kopf, R. F., R. A. Hamm, R. J. Malik, et al.. (1998). Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications. Solid-State Electronics. 42(12). 2239–2250. 9 indexed citations
18.
Hénaff-Gardin, C., et al.. (1994). Influence sur l'endommagement de stratifiés carbone-époxyde d'un radio-opacifiant à base d'iodure de zinc. Matériaux & Techniques. 82(8-9). 20–24. 2 indexed citations
19.
Chand, Naresh, T.D. Harris, S. N. G. Chu, et al.. (1991). Variation of background impurities in AlxGa1−xAs (0.3 ≤ χ ≤ 0.4) with growth temperature: implications for device leakage current and surface/heterointerface roughness. Journal of Crystal Growth. 111(1-4). 20–25. 14 indexed citations
20.
People, R., J. C. Bean, & D. V. Lang. (1985). Modulation doping in Ge(x)Si(1−x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 3(3). 846–850. 38 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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