Shu Yang

5.4k total citations
126 papers, 3.5k citations indexed

About

Shu Yang is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shu Yang has authored 126 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 96 papers in Electrical and Electronic Engineering, 92 papers in Condensed Matter Physics and 62 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shu Yang's work include GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (62 papers) and Semiconductor materials and devices (58 papers). Shu Yang is often cited by papers focused on GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (62 papers) and Semiconductor materials and devices (58 papers). Shu Yang collaborates with scholars based in China, Hong Kong and United States. Shu Yang's co-authors include Kevin J. Chen, Kuang Sheng, Sen Huang, Qimeng Jiang, Zhikai Tang, Shaowen Han, Cheng Liu, Yunyou Lu, Shenghou Liu and Chunhua Zhou and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

In The Last Decade

Shu Yang

114 papers receiving 3.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Shu Yang China	33	3.0k	2.8k	1.8k	692	494	126	3.5k
Farid Medjdoub France	28	2.3k 0.8×	1.8k 0.6×	1.1k 0.6×	492 0.7×	575 1.2×	113	2.5k
Mengyuan Hua Hong Kong	31	1.8k 0.6×	1.8k 0.6×	1.1k 0.6×	756 1.1×	318 0.6×	104	2.4k
M. Ťapajna Slovakia	24	1.3k 0.4×	1.3k 0.5×	711 0.4×	557 0.8×	262 0.5×	90	1.8k
Maojun Wang China	26	2.1k 0.7×	1.8k 0.6×	1.1k 0.6×	395 0.6×	421 0.9×	154	2.3k
Yasuhiro Uemoto Japan	26	3.1k 1.1×	3.0k 1.1×	1.4k 0.8×	830 1.2×	554 1.1×	64	3.8k
Wataru Saito Japan	24	2.1k 0.7×	2.4k 0.9×	908 0.5×	417 0.6×	473 1.0×	147	3.0k
Xuanwu Kang China	28	1.5k 0.5×	1.3k 0.5×	1.1k 0.6×	718 1.0×	308 0.6×	85	2.1k
Alessandro Chini Italy	32	3.8k 1.3×	3.2k 1.1×	1.3k 0.8×	686 1.0×	1.1k 2.2×	142	4.1k
Digbijoy N. Nath India	28	1.3k 0.5×	1.3k 0.5×	1.5k 0.8×	1.8k 2.6×	380 0.8×	96	2.9k
Xuelin Yang China	26	1.6k 0.5×	1.1k 0.4×	991 0.6×	847 1.2×	440 0.9×	174	2.3k

Countries citing papers authored by Shu Yang

Since Specialization

Citations

This map shows the geographic impact of Shu Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shu Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shu Yang more than expected).

Fields of papers citing papers by Shu Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shu Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shu Yang. The network helps show where Shu Yang may publish in the future.

Co-authorship network of co-authors of Shu Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Shu Yang. A scholar is included among the top collaborators of Shu Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shu Yang. Shu Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Liu, Xiaoyu, et al.. (2024). Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs. Applied Physics Letters. 125(17). 1 indexed citations

Zhou, Xuanze, et al.. (2024). Enhanced Gate Breakdown in β-Ga₂O₃HJFET through a NiO_x/GaO_xp-n Junction Gate Stack. 212–215. 2 indexed citations

Yang, Shu, et al.. (2024). Time-/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation. IEEE Journal of Emerging and Selected Topics in Power Electronics. 12(6). 5884–5891. 3 indexed citations

Hao, Weibing, Xuanze Zhou, Tianqi Wang, et al.. (2024). The mechanism of degradation and failure in NiO/ β -Ga2O3 heterojunction diodes induced by the high-energy ion irradiation. Applied Physics Letters. 125(16). 6 indexed citations

Wu, Xinke, et al.. (2024). An Efficient Switching Transient Analytical Model for P-GaN Gate HEMTs With Dynamic C _G(V _DS, V _GS). IEEE Transactions on Power Electronics. 40(1). 2139–2148.

Yu, Shunjie, Xi Tang, Rui Chen, et al.. (2024). kV-Class Vertical GaN PiN Diode Under Proton Irradiation: Impact on Conductivity Modulation. IEEE Electron Device Letters. 46(3). 353–356.

Hao, Weibing, Feihong Wu, Wenshen Li, et al.. (2023). Improved Vertical β-Ga₂O₃ Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension. IEEE Transactions on Electron Devices. 70(4). 2129–2134. 52 indexed citations

Chang, Jie, Haoran Li, Changhui Zhao, et al.. (2023). On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure. IEEE Electron Device Letters. 44(4). 594–597. 16 indexed citations

Han, Zhao, X. Yang, Guangwei Xu, et al.. (2023). Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β -Ga2O3 power diodes. Applied Physics Letters. 123(11). 9 indexed citations

10.

Zhou, Xuanze, Qi Liu, Man Hoi Wong, et al.. (2023). Vertical β-Ga₂O₃ Power Transistors: Fundamentals, Designs, and Opportunities. IEEE Transactions on Electron Devices. 71(3). 1513–1522. 11 indexed citations

11.

Yang, Shu, et al.. (2023). Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density. Applied Physics Letters. 122(9). 4 indexed citations

12.

Yang, Shu, et al.. (2023). Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs. 135–138. 2 indexed citations

13.

Xu, Guangwei, Feihong Wu, Qi Liu, et al.. (2023). Vertical β-Ga₂O₃ power electronics. Journal of Semiconductors. 44(7). 70301–70301. 10 indexed citations

14.

Yang, Shu, Shaowen Han, & Kuang Sheng. (2020). Vertical GaN power rectifiers: interface effects and switching performance. Semiconductor Science and Technology. 36(2). 24005–24005. 8 indexed citations

15.

Sun, Jiahui, Shu Yang, Hongyi Xu, et al.. (2019). High-Temperature Characterization of a 1.2-kV SiC MOSFET Using Dynamic Short-Circuit Measurement Technique. IEEE Journal of Emerging and Selected Topics in Power Electronics. 8(1). 215–222. 26 indexed citations

16.

Cao, Zhen, Yu Zhu, Yang Liu, et al.. (2019). High-resolution separation of DNA/proteins through nanorod sieving matrix. Biosensors and Bioelectronics. 137. 8–14. 3 indexed citations

17.

Tu, Jiawei, et al.. (2019). Optimization of gate geometry towards high-sensitivity AlGaN/GaN pH sensor. Talanta. 205. 120134–120134. 27 indexed citations

18.

Sun, Jiahui, Hongyi Xu, Shu Yang, & Kuang Sheng. (2018). Electrical characterization of 1.2kV SiC MOSFET at extremely high junction temperature. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 387–390. 11 indexed citations

19.

Lu, Yunyou, Baikui Li, Xi Tang, et al.. (2015). Normally off Al<sub>2</sub>O<sub>3</sub>–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation. IEEE Transactions on Electron Devices. 62(3). 821–827. 18 indexed citations

20.

Yang, Shu. (2007). Performance and Applications of Ferrite Electromagnetic Wave Absorbers. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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