Sen Huang

5.4k citations

216 papers · 4.4k · h-index 37

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 149
- GaN-based semiconductor devices and materials 146
Electrical and Electronic Engineering 145
- Semiconductor materials and devices 88
- Silicon Carbide Semiconductor Technologies 29
- Advancements in Semiconductor Devices and Circuit Design 16
- Radio Frequency Integrated Circuit Design 15

Co-authors: Kevin J. Chen (50 shared papers)Shu Yang (21 shared papers)Qimeng Jiang (60 shared papers)Xinyu Liu (94 shared papers)Xinhua Wang (97 shared papers)Zhikai Tang (14 shared papers)Wei Ke (70 shared papers)Chunhua Zhou (8 shared papers)
Journals: IEEE Electron Device Letters (31 papers)IEEE Transactions on Electron Devices (16 papers)Applied Physics Letters (16 papers)Journal of Semiconductors (7 papers)Semiconductor Science and Technology (5 papers)
Partner nations: China Hong Kong United States

In The Last Decade

Sen Huang

198 papers receiving 4.3k citations

Peers

Countries citing papers authored by Sen Huang

Since Specialization

Citations

This map shows the geographic impact of Sen Huang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sen Huang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sen Huang more than expected).

Fields of papers citing papers by Sen Huang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sen Huang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sen Huang. The network helps show where Sen Huang may publish in the future.

Co-authors

The 25 scholars most cited alongside Sen Huang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Sen Huang Line = papers co-authored together Sen Huang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 216 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse IEEE Electron Device Letters ·Zhikai Tang, Qimeng Jiang, Yunyou Lu, Sen Huang, Shu Yang, Xi Tang, Kevin J. Chen	2013	229
2	Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film IEEE Electron Device Letters ·Sen Huang, Qimeng Jiang, Shu Yang, Chunhua Zhou, Kevin J. Chen	2012	220
3	High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation IEEE Electron Device Letters ·Shu Yang, Zhikai Tang, King‐Yuen Wong, Yu‐Syuan Lin, Cheng Liu, Yunyou Lu, Sen Huang, Kevin J. Chen	2013	171
4	Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices IEEE Electron Device Letters ·Chunhua Zhou, Qimeng Jiang, Sen Huang, Kevin J. Chen	2012	169
5	Threshold Voltage Instability in Al₂O₃/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors Japanese Journal of Applied Physics ·Sen Huang, Shu Yang, J. C. Roberts, Kevin J. Chen	2011	144
6	Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges IEEE Electron Device Letters ·Sen Huang, Qimeng Jiang, Shu Yang, Zhikai Tang, Kevin J. Chen	2013	117
7	High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN_x Passivation IEEE Electron Device Letters ·Zhikai Tang, Sen Huang, Qimeng Jiang, Shenghou Liu, Cheng Liu, Kevin J. Chen	2013	98
8	A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit With Lateral GaN Schottky Diode for Wireless Power Transfer IEEE Transactions on Power Electronics ·Kui Dang, Jincheng Zhang, Hong Zhou, Sen Huang, Tao Zhang, Zhaoke Bian, Yachao Zhang, Xinhua Wang, Shenglei Zhao, Wei Ke, Yue Hao	2019	92
9	Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN_x Passivation and High-Temperature Gate Recess IEEE Transactions on Electron Devices ·(unknown), Sen Huang, Qilong Bao, Xinhua Wang, Wei Ke, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang, Xinyu Liu	2016	90
10	Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices IEEE Transactions on Electron Devices ·Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Jie Fan, Jingyuan Shi, Wei Ke, Yingkui Zheng, Hongwei Gao, Qian Sun, Maojun Wang, Bo Shen, Kevin J. Chen	2017	89
11	Stochastic optimal sizing of distributed energy resources for a cost-effective and resilient Microgrid Energy ·Di Wu, Xu Ma, Sen Huang, Tao Fu, Patrick Balducci	2020	84
12	High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure IEEE Electron Device Letters ·Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Qilong Bao, Wei Ke, Yingkui Zheng, Chao Zhao, Hongwei Gao, Qian Sun, Zhaofu Zhang, Kevin J. Chen	2016	84
13	High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy Applied Physics Express ·Xinqiang Wang, Shitao Liu, Nan Ma, Feng Li, Guang Chen, Fujun Xu, Ning Tang, Sen Huang, Kevin J. Chen, Shengqiang Zhou, Bo Shen	2012	82
14	High-Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN-on-Si MISFETs With 626 MW/<inline-formula> <tex-math notation="LaTeX">$\mathrm{cm}^{2}$ </tex-math></inline-formula> Figure of Merit IEEE Transactions on Electron Devices ·Qi Zhou, Bowen Chen, Jin Yang, Sen Huang, Wei Ke, Xinyu Liu, Xu Bao, Jinyu Mou, Bo Zhang	2015	75
15	Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy IEEE Electron Device Letters ·Song Yang, Sen Huang, Jin Wei, Zheyang Zheng, Yuru Wang, Jiabei He, Kevin J. Chen	2020	75
16	Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer IEEE Transactions on Electron Devices ·Xinhua Wang, Sen Huang, Yingkui Zheng, Ke Wei, Xiaojuan Chen, Haoxiang Zhang, Xinyu Liu	2014	70
17	Robust SiN<sub><italic>x</italic></sub>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<sub><italic>x</italic></sub> Layer IEEE Electron Device Letters ·Xinhua Wang, Sen Huang, Yingkui Zheng, Wei Ke, Xiaojuan Chen, Guoguo Liu, Tingting Yuan, Weijun Luo, Lei Pang, Haojie Jiang, Junfeng Li, Chao Zhao, Haoxiang Zhang, Xinyu Liu	2015	69
18	Mapping of interface traps in high-performance Al₂O₃/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Shu Yang, Zhikai Tang, King‐Yuen Wong, Yu‐Syuan Lin, Yunyou Lu, Sen Huang, Kevin J. Chen	2013	67
19	O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors Applied Physics Letters ·Sen Huang, Xinyu Liu, Wei Ke, Guoguo Liu, Xinhua Wang, Bing Sun, Xuelin Yang, Bo Shen, Cheng Liu, Shenghou Liu, Mengyuan Hua, Shu Yang, Kevin J. Chen	2015	62
20	Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing Applied Physics Letters ·Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Wei Ke, Yingkui Zheng, Yankui Li, Chao Zhao, Xinyu Liu, Qi Zhou, Wanjun Chen, Bo Zhang	2015	57

About Sen Huang

Sen Huang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 216 papers that have together received 4.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (146 papers), Semiconductor materials and devices (88 papers), Ga2O3 and related materials (83 papers), Silicon Carbide Semiconductor Technologies (29 papers), ZnO doping and properties (29 papers), Semiconductor Quantum Structures and Devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Radio Frequency Integrated Circuit Design (15 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (1.9k citations), Electrical and Electronic Engineering (3.2k citations), Energy Engineering and Power Technology (90 citations) and Atomic and Molecular Physics, and Optics (728 citations). Sen Huang has collaborated with scholars based in China, Hong Kong and United States. Frequent co-authors include Kevin J. Chen, Shu Yang, Qimeng Jiang, Xinyu Liu, Xinhua Wang, Zhikai Tang, Wei Ke, Chunhua Zhou, Yunyou Lu and J. C. Roberts. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Semiconductors and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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