Wei Ke

18.5k total citations
509 papers, 15.5k citations indexed

About

Wei Ke is a scholar working on Materials Chemistry, Metals and Alloys and Mechanical Engineering. According to data from OpenAlex, Wei Ke has authored 509 papers receiving a total of 15.5k indexed citations (citations by other indexed papers that have themselves been cited), including 299 papers in Materials Chemistry, 169 papers in Metals and Alloys and 120 papers in Mechanical Engineering. Recurrent topics in Wei Ke's work include Corrosion Behavior and Inhibition (215 papers), Hydrogen embrittlement and corrosion behaviors in metals (169 papers) and GaN-based semiconductor devices and materials (103 papers). Wei Ke is often cited by papers focused on Corrosion Behavior and Inhibition (215 papers), Hydrogen embrittlement and corrosion behaviors in metals (169 papers) and GaN-based semiconductor devices and materials (103 papers). Wei Ke collaborates with scholars based in China, Hong Kong and Nigeria. Wei Ke's co-authors include En‐Hou Han, Junhua Dong, Jianqiu Wang, Yugui Zheng, Long Hao, Zhenyu Wang, Cheng Sun, Maocheng Yan, Xinyu Liu and Jian Chen and has published in prestigious journals such as Environmental Science & Technology, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Wei Ke

484 papers receiving 14.8k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Wei Ke 10.0k 5.5k 5.5k 3.0k 2.7k 509 15.5k
Jerzy A. Szpunar 13.1k 1.3× 10.5k 1.9× 3.9k 0.7× 699 0.2× 1.0k 0.4× 719 19.7k
M.G.S. Ferreira 18.4k 1.8× 3.2k 0.6× 4.1k 0.8× 7.2k 2.4× 3.2k 1.2× 361 22.6k
John R. Scully 12.6k 1.3× 6.8k 1.2× 5.9k 1.1× 3.1k 1.0× 2.4k 0.9× 431 17.1k
G. S. Frankel 13.9k 1.4× 7.1k 1.3× 5.5k 1.0× 3.1k 1.1× 3.7k 1.4× 373 18.4k
Fuhui Wang 20.7k 2.1× 11.6k 2.1× 5.6k 1.0× 4.2k 1.4× 5.6k 2.1× 1.0k 30.2k
Mikhail L. Zheludkevich 18.4k 1.8× 4.3k 0.8× 1.4k 0.3× 4.0k 1.3× 8.3k 3.1× 410 22.1k
H. Habazaki 11.2k 1.1× 3.4k 0.6× 1.2k 0.2× 2.0k 0.7× 1.3k 0.5× 641 16.2k
Jing‐Li Luo 15.5k 1.5× 3.2k 0.6× 4.0k 0.7× 1.8k 0.6× 399 0.1× 673 25.3k
P. Skeldon 15.1k 1.5× 4.0k 0.7× 1.0k 0.2× 3.6k 1.2× 4.0k 1.5× 485 18.1k
Ingrid Milošev 7.1k 0.7× 1.6k 0.3× 1.7k 0.3× 2.0k 0.7× 406 0.2× 221 9.8k

Countries citing papers authored by Wei Ke

Since Specialization
Citations

This map shows the geographic impact of Wei Ke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wei Ke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wei Ke more than expected).

Fields of papers citing papers by Wei Ke

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wei Ke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wei Ke. The network helps show where Wei Ke may publish in the future.

Co-authorship network of co-authors of Wei Ke

This figure shows the co-authorship network connecting the top 25 collaborators of Wei Ke. A scholar is included among the top collaborators of Wei Ke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wei Ke. Wei Ke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Kaiyu, Sheng Zhang, Jiebin Niu, et al.. (2025). AlN/GaN MIS-HEMT With GeN Gate Dielectric for mm-Wave Applications. IEEE Microwave and Wireless Technology Letters. 35(6). 896–899.
2.
Ming, Hongliang, et al.. (2024). Hydrogen permeation behavior at different positions in the normal direction of X42 and X52 pipeline steels. International Journal of Hydrogen Energy. 72. 1105–1115. 17 indexed citations
3.
Gao, Runhua, Xinhua Wang, Fengwen Mu, et al.. (2024). Heterogeneous integration of thick GaN and polycrystalline diamond at room temperature through dynamic plasma polishing and surface-activated bonding. Journal of Alloys and Compounds. 985. 174075–174075. 3 indexed citations
4.
Ke, Wei, et al.. (2024). Virtual design of woven fabrics based on parametric modeling and physically based rendering. Computer-Aided Design. 173. 103717–103717. 9 indexed citations
5.
Ding, Jianhua, Jibo Tan, Ziyu Zhang, et al.. (2023). Low cycle fatigue behavior of 316LN stainless steel hollow specimen in air and liquid lead–bismuth eutectic. International Journal of Fatigue. 175. 107812–107812. 7 indexed citations
6.
Ke, Wei, Shengli Zhang, Yan Zhang, et al.. (2023). Low damage atomic layer etching technology for gate recessed fabrication. Vacuum. 217. 112591–112591. 2 indexed citations
7.
Qiao, Chuang, Qiong Wu, Long Hao, et al.. (2023). Material selection in making electrochemical impedance spectroscopy sensor for electrolyte thickness measurement in marine atmosphere. Corrosion Science. 221. 111373–111373. 19 indexed citations
8.
Liu, Xinyu, Sheng Zhang, Wei Ke, et al.. (2023). 0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer. IEEE Electron Device Letters. 44(7). 1080–1083. 4 indexed citations
10.
Zhang, Sheng, et al.. (2022). Improved breakdown characteristic of AlGaN/GaN HEMTs with a width gradient recessed dual-gate structure. Semiconductor Science and Technology. 37(11). 115012–115012. 2 indexed citations
11.
Jin, Hao, Qimeng Jiang, Sen Huang, et al.. (2022). An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage. IEEE Electron Device Letters. 43(8). 1191–1194. 41 indexed citations
12.
13.
Zhang, Sheng, Wei Ke, Xiaojuan Chen, et al.. (2021). 7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer. IEEE Electron Device Letters. 42(10). 1436–1439. 13 indexed citations
14.
Huang, Sen, Xinhua Wang, Wen Shi, et al.. (2021). Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments. Applied Physics Letters. 118(9). 30 indexed citations
16.
Zhang, Sheng, Xinyu Liu, Wei Ke, et al.. (2020). Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD. IEEE Transactions on Electron Devices. 68(1). 49–52. 32 indexed citations
17.
Huang, Sen, Wei Ke, Sheng Zhang, et al.. (2020). Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess. IEEE Electron Device Letters. 41(5). 701–704. 46 indexed citations
18.
Huang, Sen, Xinhua Wang, Xuanwu Kang, et al.. (2019). Effects of Fluorine Plasma Treatment on Au-Free Ohmic Contacts to Ultrathin-Barrier AlGaN/GaN Heterostructure. IEEE Transactions on Electron Devices. 66(7). 2932–2936. 13 indexed citations
19.
Zhang, Jinhan, Xuanwu Kang, Xinhua Wang, et al.. (2018). Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures. IEEE Electron Device Letters. 39(6). 847–850. 49 indexed citations
20.
Dong, Junhua, et al.. (2013). INFLUENCE OF MICROSTRUCTURE OF AH32 CORROSION RESISTANT STEEL ON CORROSION BEHAVIOR. ACTA METALLURGICA SINICA. 48(5). 534–540. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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