Jingan Zhou

1.0k total citations
35 papers, 741 citations indexed

About

Jingan Zhou is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Jingan Zhou has authored 35 papers receiving a total of 741 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 20 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Jingan Zhou's work include GaN-based semiconductor devices and materials (28 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (11 papers). Jingan Zhou is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Ga2O3 and related materials (20 papers) and Semiconductor materials and devices (11 papers). Jingan Zhou collaborates with scholars based in United States, China and Germany. Jingan Zhou's co-authors include Yuji Zhao, Kai Fu, Houqiang Fu, Chen Yang, Tsung-Han Yang, Xuanqi Huang, Jossue Montes, Hong Chen, Xin Qi and Xuguang Deng and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Jingan Zhou

33 papers receiving 706 citations

Peers

Jingan Zhou
Shashwat Rathkanthiwar United States
Mouldi Zouaoui Tunisia
A. Boukortt Algeria
Mingzeng Peng China
Katherine Develos-Bagarinao Japan
A. Wierzbicka Poland
M.H. Pu China
Ł. Kilański Poland
Weifang Lu Japan
Huizhao Zhuang China
Shashwat Rathkanthiwar United States
Jingan Zhou
Citations per year, relative to Jingan Zhou Jingan Zhou (= 1×) peers Shashwat Rathkanthiwar

Countries citing papers authored by Jingan Zhou

Since Specialization
Citations

This map shows the geographic impact of Jingan Zhou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jingan Zhou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jingan Zhou more than expected).

Fields of papers citing papers by Jingan Zhou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jingan Zhou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jingan Zhou. The network helps show where Jingan Zhou may publish in the future.

Co-authorship network of co-authors of Jingan Zhou

This figure shows the co-authorship network connecting the top 25 collaborators of Jingan Zhou. A scholar is included among the top collaborators of Jingan Zhou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jingan Zhou. Jingan Zhou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fu, Kai, Qingyun Xie, Mengyang Yuan, et al.. (2023). Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments. Applied Physics Letters. 123(24). 7 indexed citations
2.
Fu, Kai, et al.. (2023). Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes. Journal of Electronic Materials. 52(5). 3343–3351. 2 indexed citations
3.
Fu, Kai, et al.. (2023). Understanding the Breakdown Behavior of Ultrawide‐Bandgap Boron Nitride Power Diodes Using Device Modeling. physica status solidi (RRL) - Rapid Research Letters. 18(7). 5 indexed citations
4.
Fu, Kai, Houqiang Fu, Hanxiao Liu, et al.. (2023). GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications. IEEE Transactions on Electron Devices. 71(3). 1641–1645. 10 indexed citations
5.
Deng, Bing, Paul A. Advincula, Duy Xuan Luong, et al.. (2022). High-surface-area corundum nanoparticles by resistive hotspot-induced phase transformation. Nature Communications. 13(1). 5027–5027. 39 indexed citations
6.
Fu, Kai, Houqiang Fu, Xuguang Deng, et al.. (2021). The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices. Applied Physics Letters. 118(22). 20 indexed citations
7.
Yang, Chen, Houqiang Fu, Kai Fu, et al.. (2021). Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension. Semiconductor Science and Technology. 36(7). 75009–75009. 8 indexed citations
8.
Chen, Hong, Jingan Zhou, Dongying Li, et al.. (2021). Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides. ACS Photonics. 8(5). 1344–1352. 21 indexed citations
9.
Huang, Xuanqi, Dongying Li, Houqiang Fu, et al.. (2020). Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures. Nano Energy. 76. 105013–105013. 4 indexed citations
10.
Yang, Chen, Houqiang Fu, Hanxiao Liu, et al.. (2020). Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment. Applied Physics Letters. 117(5). 9 indexed citations
11.
Fu, Kai, Xin Qi, Houqiang Fu, et al.. (2020). Characterization of MOCVD regrown p -GaN and the interface properties for vertical GaN power devices. Semiconductor Science and Technology. 36(1). 14005–14005. 6 indexed citations
12.
Chen, Hong, Jingan Zhou, Houqiang Fu, Xuanqi Huang, & Yuji Zhao. (2019). Study of Crystalline Defect Induced Optical Scattering Loss inside AlN Waveguides in UV-Visible Spectral Wavelengths. Conference on Lasers and Electro-Optics. 8749725.
13.
Huang, Xuanqi, Runchen Fang, Chen Yang, et al.. (2019). Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device. Nanotechnology. 30(21). 215201–215201. 12 indexed citations
14.
Fu, Houqiang, Kai Fu, Hanxiao Liu, et al.. (2019). Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing. Applied Physics Express. 12(5). 51015–51015. 35 indexed citations
15.
Fu, Kai, Houqiang Fu, Xuanqi Huang, et al.. (2019). Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical <italic>p</italic>-<italic>n</italic> Diodes With High Temperature Stability. IEEE Electron Device Letters. 40(3). 375–378. 22 indexed citations
16.
Montes, Jossue, Chen Yang, Houqiang Fu, et al.. (2019). Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction. Applied Physics Letters. 114(16). 75 indexed citations
17.
Fu, Kai, Houqiang Fu, Xuanqi Huang, et al.. (2019). Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics. IEEE Electron Device Letters. 40(11). 1728–1731. 51 indexed citations
18.
Chen, Hong, Houqiang Fu, Jingan Zhou, et al.. (2019). Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV–visible spectral wavelengths using volume current method. Optics Express. 27(12). 17262–17262. 5 indexed citations
19.
Yu, Haiming, et al.. (2004). Effects of reactor pressure on GaN-based light-emitting diodes grown on a-plane sapphire substrates. Journal of Crystal Growth. 267(3-4). 395–399. 3 indexed citations
20.
Feng, Wei, Yin Wang, Jiannong Wang, et al.. (1998). Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells. Applied Physics Letters. 72(12). 1463–1465. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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