Tsung-Han Yang

2.1k total citations
64 papers, 1.7k citations indexed

About

Tsung-Han Yang is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, Tsung-Han Yang has authored 64 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 28 papers in Electronic, Optical and Magnetic Materials and 24 papers in Condensed Matter Physics. Recurrent topics in Tsung-Han Yang's work include Ga2O3 and related materials (26 papers), GaN-based semiconductor devices and materials (23 papers) and ZnO doping and properties (19 papers). Tsung-Han Yang is often cited by papers focused on Ga2O3 and related materials (26 papers), GaN-based semiconductor devices and materials (23 papers) and ZnO doping and properties (19 papers). Tsung-Han Yang collaborates with scholars based in United States, Taiwan and China. Tsung-Han Yang's co-authors include J. Narayan, Houqiang Fu, Yuji Zhao, Kai Fu, Xuanqi Huang, Jossue Montes, Hong Chen, Jingan Zhou, Chen Yang and Honghui Zhou and has published in prestigious journals such as Nano Letters, Applied Physics Letters and PLoS ONE.

In The Last Decade

Tsung-Han Yang

63 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tsung-Han Yang United States 25 961 723 593 571 374 64 1.7k
Şuat Pat Türkiye 24 928 1.0× 255 0.4× 1.1k 1.8× 165 0.3× 312 0.8× 167 1.7k
Liann‐Be Chang Taiwan 24 1.3k 1.4× 232 0.3× 788 1.3× 446 0.8× 136 0.4× 172 2.0k
Makram A. Fakhri Iraq 31 1.5k 1.6× 471 0.7× 1.3k 2.1× 217 0.4× 404 1.1× 159 2.6k
Guodong Yuan China 22 855 0.9× 461 0.6× 1.2k 2.0× 311 0.5× 101 0.3× 76 2.2k
Tao Tao China 18 569 0.6× 454 0.6× 656 1.1× 685 1.2× 142 0.4× 137 1.6k
Shaoqiang Chen China 27 1.8k 1.9× 224 0.3× 1.3k 2.1× 222 0.4× 192 0.5× 150 2.3k
D. V. Karpinsky Russia 29 487 0.5× 2.5k 3.5× 2.3k 3.9× 667 1.2× 127 0.3× 172 3.2k
Yicheng Lu United States 22 1.2k 1.2× 354 0.5× 1.3k 2.3× 93 0.2× 169 0.5× 61 2.0k
P. M. Lytvyn Ukraine 19 795 0.8× 330 0.5× 1.1k 1.8× 170 0.3× 114 0.3× 193 1.7k

Countries citing papers authored by Tsung-Han Yang

Since Specialization
Citations

This map shows the geographic impact of Tsung-Han Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsung-Han Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsung-Han Yang more than expected).

Fields of papers citing papers by Tsung-Han Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsung-Han Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsung-Han Yang. The network helps show where Tsung-Han Yang may publish in the future.

Co-authorship network of co-authors of Tsung-Han Yang

This figure shows the co-authorship network connecting the top 25 collaborators of Tsung-Han Yang. A scholar is included among the top collaborators of Tsung-Han Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tsung-Han Yang. Tsung-Han Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, Ging‐Long, et al.. (2023). Experimental verification of seismic vibration control of high-rise buildings with friction-type multiple tuned mass dampers. Engineering Structures. 302. 117401–117401. 3 indexed citations
2.
Fu, Kai, Houqiang Fu, Xuguang Deng, et al.. (2021). The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices. Applied Physics Letters. 118(22). 20 indexed citations
3.
Yang, Chen, Houqiang Fu, Kai Fu, et al.. (2021). Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension. Semiconductor Science and Technology. 36(7). 75009–75009. 8 indexed citations
4.
Chien, Li‐Nien, et al.. (2021). Real-world cost-effectiveness analysis of the fracture liaison services model of care for hip fracture in Taiwan. Journal of the Formosan Medical Association. 121(1). 425–433. 9 indexed citations
5.
Yang, Rong‐Sen, Lo‐Yu Chang, Jen‐Kuei Peng, et al.. (2021). One-year outcomes of an osteoporosis liaison services program initiated within a healthcare system. Osteoporosis International. 32(11). 2163–2172. 8 indexed citations
6.
Chen, Hong, Jingan Zhou, Dongying Li, et al.. (2021). Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides. ACS Photonics. 8(5). 1344–1352. 21 indexed citations
7.
Huang, Xuanqi, Dongying Li, Houqiang Fu, et al.. (2020). Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures. Nano Energy. 76. 105013–105013. 4 indexed citations
8.
Yang, Chen, Houqiang Fu, Hanxiao Liu, et al.. (2020). Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment. Applied Physics Letters. 117(5). 9 indexed citations
9.
Fu, Kai, Xin Qi, Houqiang Fu, et al.. (2020). Characterization of MOCVD regrown p -GaN and the interface properties for vertical GaN power devices. Semiconductor Science and Technology. 36(1). 14005–14005. 6 indexed citations
10.
Huang, Xuanqi, Runchen Fang, Chen Yang, et al.. (2019). Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device. Nanotechnology. 30(21). 215201–215201. 12 indexed citations
11.
Chiou, Lih‐Yih, et al.. (2019). Intelligent Policy Selection for GPU Warp Scheduler. 302–303. 2 indexed citations
12.
Fu, Houqiang, Kai Fu, Hanxiao Liu, et al.. (2019). Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing. Applied Physics Express. 12(5). 51015–51015. 35 indexed citations
13.
Fu, Kai, Houqiang Fu, Hanxiao Liu, et al.. (2018). Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition. Applied Physics Letters. 113(23). 55 indexed citations
14.
Chen, Hong, Houqiang Fu, Xuanqi Huang, et al.. (2017). Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications. Optics Express. 25(25). 31758–31758. 42 indexed citations
15.
Wang, Yiwen, Tingyang Chen, Tsung-Han Yang, et al.. (2016). Thin-Film Transistor-Based Biosensors for Determining Stoichiometry of Biochemical Reactions. PLoS ONE. 11(12). e0169094–e0169094. 9 indexed citations
16.
Yang, Tsung-Han, et al.. (2015). An improved strategic information management plan for medical institutes. Computer Standards & Interfaces. 45. 26–36. 1 indexed citations
17.
Guo, Daoyou, Zhenping Wu, Tsung-Han Yang, et al.. (2015). Abnormal bipolar resistive switching behavior in a Pt/GaO1.3/Pt structure. Applied Physics Letters. 107(3). 58 indexed citations
18.
Yang, Tsung-Han, Chunming Jin, Ravi Aggarwal, & J. Narayan. (2010). On growth of epitaxial vanadium oxide thin film on sapphire (0001). Journal of materials research/Pratt's guide to venture capital sources. 25(3). 422–426. 36 indexed citations
19.
Yang, Tsung-Han, Sudhakar Nori, Honghui Zhou, & J. Narayan. (2009). Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films. Applied Physics Letters. 95(10). 45 indexed citations
20.
Shih, Hsiu‐Ming, et al.. (2007). The type 2 dengue virus envelope protein interacts with small ubiquitin-like modifier-1 (SUMO-1) conjugating enzyme 9 (Ubc9). Journal of Biomedical Science. 14(3). 429–444. 41 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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