Yi‐Ting Tseng

754 total citations
42 papers, 627 citations indexed

About

Yi‐Ting Tseng is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, Yi‐Ting Tseng has authored 42 papers receiving a total of 627 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 12 papers in Polymers and Plastics and 7 papers in Materials Chemistry. Recurrent topics in Yi‐Ting Tseng's work include Advanced Memory and Neural Computing (27 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Semiconductor materials and devices (13 papers). Yi‐Ting Tseng is often cited by papers focused on Advanced Memory and Neural Computing (27 papers), Ferroelectric and Negative Capacitance Devices (22 papers) and Semiconductor materials and devices (13 papers). Yi‐Ting Tseng collaborates with scholars based in Taiwan, China and United States. Yi‐Ting Tseng's co-authors include Ting‐Chang Chang, Simon M. Sze, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih‐Cheng Shih, Po‐Hsun Chen, Min-Chen Chen, Haimei Zheng, Chih‐Yang Lin and Shigeto Kawashima and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and The Science of The Total Environment.

In The Last Decade

Yi‐Ting Tseng

39 papers receiving 619 citations

Peers

Countries citing papers authored by Yi‐Ting Tseng

Since Specialization

Citations

This map shows the geographic impact of Yi‐Ting Tseng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yi‐Ting Tseng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yi‐Ting Tseng more than expected).

Fields of papers citing papers by Yi‐Ting Tseng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yi‐Ting Tseng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yi‐Ting Tseng. The network helps show where Yi‐Ting Tseng may publish in the future.

Co-authorship network of co-authors of Yi‐Ting Tseng

This figure shows the co-authorship network connecting the top 25 collaborators of Yi‐Ting Tseng. A scholar is included among the top collaborators of Yi‐Ting Tseng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yi‐Ting Tseng. Yi‐Ting Tseng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Single-particle spectra and magnetic susceptibility in the Emery model: A dynamical mean-field perspective 2025 ·SciPost Physics ·Yi‐Ting Tseng, (unknown), Henri Menke, Marcel Klett, Thomas Schäfer, P. Hansmann	0
2	Investigations on TaHf alloys for thin film resistor applications 2022 ·Materials Chemistry and Physics ·(unknown), Ting‐Chang Chang, Wen‐Chung Chen, (unknown), Yi‐Ting Tseng, Chih-Cheng Yang, (unknown), Peiyu Wu, (unknown), Tsung‐Ming Tsai	1
3	Enhanced switching performance of resistance random access memories by an inserted copper tellurium layer 2021 ·Journal of Physics D Applied Physics ·Po‐Hsun Chen, Chih‐Yang Lin, (unknown), Yi‐Ting Tseng, Jen‐Wei Huang	2
4	A high-speed MIM resistive memory cell with an inherent vanadium selector 2020 ·Applied Materials Today ·Chih-Yang Lin, Yi‐Ting Tseng, Po‐Hsun Chen, Ting‐Chang Chang, Jason K. Eshraghian, (unknown), Qi Lin, (unknown), Mao‐Chou Tai, Wei‐Chun Hung, Hui‐Chun Huang, Wei Lü, Simon M. Sze	15
5	Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode 2020 ·IEEE Transactions on Electron Devices ·Tsung‐Han Yeh, Po‐Hsun Chen, Chih-Yang Lin, Yi‐Ting Tseng, Wen‐Chung Chen, (unknown), Ting‐Chang Chang, Ching-Ting Lee, Hsin-Ying Lee	7
6	Investigation on the current conduction mechanism of HfZrO _x ferroelectric memory 2020 ·Journal of Physics D Applied Physics ·Wen‐Chung Chen, (unknown), Po‐Hsun Chen, Yi‐Ting Tseng, (unknown), Chih-Cheng Yang, Peiyu Wu, (unknown), (unknown), (unknown), Hui‐Chun Huang, Tsung‐Ming Tsai, Ting‐Chang Chang	15
7	Impact of electrode thermal conductivity on high resistance state level in HfO ₂ -based RRAM 2020 ·Journal of Physics D Applied Physics ·(unknown), (unknown), Min-Chen Chen, Ting‐Chang Chang, Chenhsin Lien, Youlin Xu, Yi‐Ting Tseng, Peiyu Wu, (unknown), (unknown), (unknown), Jen‐Wei Huang, Simon M. Sze	9
8	Investigation of the forming process under UV illumination in HfO ₂ -based resistance random access memory with a transparent electrode 2019 ·Journal of Physics D Applied Physics ·(unknown), (unknown), Po‐Hsun Chen, Min-Chen Chen, Ting‐Chang Chang, Chih‐Cheng Shih, Yi‐Ting Tseng, Haimei Zheng, (unknown), (unknown), (unknown), Xiaohua Ma, Yue Hao, Simon M. Sze	5
9	Forecasting the seasonal pollen index by using a hidden Markov model combining meteorological and biological factors 2019 ·The Science of The Total Environment ·Yi‐Ting Tseng, Shigeto Kawashima, Satoshi Kobayashi, Shinji Takeuchi, Kimihito Nakamura	23
10	Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO₂/TiN Resistive Random Access Memory 2019 ·IEEE Electron Device Letters ·Kuan‐Ju Zhou, Ting‐Chang Chang, (unknown), (unknown), Yi‐Ting Tseng, Haimei Zheng, Hong-Chih Chen, (unknown), (unknown), (unknown), (unknown), (unknown), Simon M. Sze	15
11	The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector 2018 ·IEEE Transactions on Electron Devices ·(unknown), Chih‐Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang, Chih‐Cheng Shih, Yi‐Ting Tseng, Haimei Zheng, Ying‐Chen Chen, Yao‐Feng Chang, (unknown), Hui‐Chun Huang, (unknown), Hao Wang, Simon M. Sze	31
12	Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory 2018 ·Applied Physics Letters ·Yi‐Ting Tseng, (unknown), Ting‐Chang Chang, J.C. Huang, Chih‐Cheng Shih, Haimei Zheng, Wen‐Chung Chen, Minghui Wang, (unknown), Min-Chen Chen, Xiaohua Ma, Yue Hao, Simon M. Sze	30
13	Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode 2017 ·Nanoscale ·Chih-Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Shengdong Zhang, Tsung‐Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu‐Ting Su, Yi‐Ting Tseng, Yao‐Feng Chang, Ying‐Chen Chen, Hui‐Chun Huang, Simon M. Sze	58
14	Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory 2017 ·ACS Applied Materials & Interfaces ·Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Min-Chen Chen, Yu‐Ting Su, Chih‐Yang Lin, Yi‐Ting Tseng, Hui‐Chun Huang, Huaqiang Wu, Ning Deng, He Qian, Simon M. Sze	31
15	Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment 2017 ·Nanoscale Research Letters ·Fang-Yuan Yuan, Ning Deng, Chih‐Cheng Shih, Yi‐Ting Tseng, Ting‐Chang Chang, Kuan‐Chang Chang, Minghui Wang, Wen‐Chung Chen, Haimei Zheng, Huaqiang Wu, He Qian, Simon M. Sze	60
16	Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory 2016 ·IEEE Transactions on Electron Devices ·Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang, Tsung‐Ming Tsai, Chih-Hung Pan, Chih‐Cheng Shih, (unknown), (unknown), Yu‐Ting Su, Chih‐Yang Lin, Yi‐Ting Tseng, Min-Chen Chen, Ruey‐Chi Wang, Ching‐Chich Leu, Kai-Huang Chen, Ikai Lo, Jin‐Cheng Zheng, Simon M. Sze	10
17	Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO<sub>2</sub> Fluid 2015 ·IEEE Electron Device Letters ·Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, (unknown), Kai-Huang Chen, Jung‐Hui Chen, Min-Chen Chen, Hui‐Chun Huang, Wei Zhang, Chih‐Yang Lin, Yi‐Ting Tseng, (unknown), Jin‐Cheng Zheng, Simon M. Sze	25
18	Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory 2015 ·Applied Physics Letters ·Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang, Chih‐Cheng Shih, Kuan‐Chang Chang, (unknown), Kai-Huang Chen, Jung‐Hui Chen, (unknown), Chih‐Yang Lin, Ya-Chi Hung, Yong-En Syu, Jin‐Cheng Zheng, Simon M. Sze	51
19	Rates of Smoke Leakage through Firestops 2013 ·SHILAP Revista de lepidopterología ·(unknown), (unknown), Yi‐Ting Tseng, (unknown), (unknown), Ching‐Yuan Lin	6
20	Closeness and Turnout: Evidence from Election of Taiwan 2011 ·Economics bulletin ·(unknown), Yi‐Ting Tseng, (unknown)	0

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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