Chih-Hung Pan

984 citations

38 papers · 840 indexed · h-index 17

Electrical and Electronic Engineering top 5%
Polymers and Plastics top 5%
Cellular and Molecular Neuroscience top 10%
Materials Chemistry
Cognitive Neuroscience

Co-authors: Kuan‐Chang Chang Tsung‐Ming Tsai Ting‐Chang Chang Min-Chen Chen Simon M. Sze Tian-Jian Chu Po‐Hsun Chen Chih‐Cheng Shih
Topics: Advanced Memory and Neural Computing (37 papers)Ferroelectric and Negative Capacitance Devices (29 papers)Transition Metal Oxide Nanomaterials (15 papers)
Cited by: Polymers and Plastics Electrical and Electronic Engineering Cellular and Molecular Neuroscience
Journals: Applied Physics Letters ACS Applied Materials & Interfaces Chemosphere
Partner nations: Taiwan China United States

In The Last Decade

Chih-Hung Pan

37 papers receiving 827 citations

Peers

Countries citing papers authored by Chih-Hung Pan

Since Specialization

Citations

This map shows the geographic impact of Chih-Hung Pan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chih-Hung Pan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chih-Hung Pan more than expected).

Fields of papers citing papers by Chih-Hung Pan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chih-Hung Pan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chih-Hung Pan. The network helps show where Chih-Hung Pan may publish in the future.

Co-authorship network of co-authors of Chih-Hung Pan

This figure shows the co-authorship network connecting the top 25 collaborators of Chih-Hung Pan. A scholar is included among the top collaborators of Chih-Hung Pan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chih-Hung Pan. Chih-Hung Pan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Avatar-like body imaging of dermal exposure to melamine in factory workers analyzed by ambient mass spectrometry 2022 ·Chemosphere ·Yu‐Ming Hsu,Chia‐Fang Wu,Min‐Zong Huang,Jentaie Shiea,Chih-Hung Pan,Chia‐Chu Liu,Chu‐Chih Chen,(unknown),(unknown),Ming‐Tsang Wu	4
2	A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory 2019 ·Journal of Alloys and Compounds ·Chih‐Yang Lin,Ting‐Chang Chang,Chih-Hung Pan,Min-Chen Chen,Youlin Xu,(unknown),Peiyu Wu,(unknown),(unknown),(unknown),(unknown),(unknown),Xiaohua Ma,Yue Hao,Simon M. Sze	3
3	Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM 2018 ·IEEE Electron Device Letters ·(unknown),(unknown),Chih-Hung Pan,Po‐Hsun Chen,(unknown),Ting‐Chang Chang,Tsung‐Ming Tsai,Youlin Xu,Chih‐Cheng Shih,(unknown),Wen‐Chung Chen,Minghui Wang,Shengdong Zhang,Simon M. Sze	18
4	Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications 2017 ·Applied Surface Science ·Po‐Hsun Chen,Ting‐Chang Chang,Kuan‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Chih‐Cheng Shih,(unknown),Chih-Cheng Yang,Wen‐Chung Chen,(unknown),Minghui Wang,Haimei Zheng,Min-Chen Chen,Simon M. Sze	19
5	Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode 2017 ·Nanoscale ·Chih-Yang Lin,Po‐Hsun Chen,Ting‐Chang Chang,Kuan‐Chang Chang,Shengdong Zhang,Tsung‐Ming Tsai,Chih-Hung Pan,Min-Chen Chen,Yu‐Ting Su,Yi‐Ting Tseng,Yao‐Feng Chang,Ying‐Chen Chen,Hui‐Chun Huang,Simon M. Sze	58
6	Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory 2017 ·IEEE Electron Device Letters ·Tsung‐Ming Tsai,(unknown),Kuan‐Chang Chang,Chih-Hung Pan,Po‐Hsun Chen,(unknown),(unknown),(unknown),Wen‐Chung Chen,Huaqiang Wu,Ning Deng,He Qian	8
7	Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory 2017 ·ACS Applied Materials & Interfaces ·Po‐Hsun Chen,Ting‐Chang Chang,Kuan‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Min-Chen Chen,Yu‐Ting Su,Chih‐Yang Lin,Yi‐Ting Tseng,Hui‐Chun Huang,Huaqiang Wu,Ning Deng,He Qian,Simon M. Sze	31
8	Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation 2017 ·RSC Advances ·Cong Ye,Jiaji Wu,Chih-Hung Pan,Tsung‐Ming Tsai,Kuan‐Chang Chang,Huaqiang Wu,Ning Deng,He Qian	25
9	Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory 2017 ·Applied Physics Express ·(unknown),Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Chang Chang,Tian-Jian Chu,Chih-Hung Pan,Yu‐Ting Su,Po‐Hsun Chen,(unknown),(unknown),Simon M. Sze	12
10	Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory 2016 ·IEEE Transactions on Electron Devices ·Po‐Hsun Chen,Ting‐Chang Chang,Kuan‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Chih‐Cheng Shih,(unknown),(unknown),Yu‐Ting Su,Chih‐Yang Lin,Yi‐Ting Tseng,Min-Chen Chen,Ruey‐Chi Wang,Ching‐Chich Leu,Kai-Huang Chen,Ikai Lo,Jin‐Cheng Zheng,Simon M. Sze	10
11	A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiO _x -based resistive switching memory 2016 ·Physical Sciences Reviews ·Yao‐Feng Chang,Burt Fowler,Ying‐Chen Chen,Fei Zhou,Chih-Hung Pan,Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,Simon M. Sze,Jack C. Lee	1
12	Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence 2016 ·Applied Physics Letters ·Chih-Hung Pan,Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Chang Chang,Po‐Hsun Chen,(unknown),Min-Chen Chen,Hui‐Chun Huang,Huaqiang Wu,Ning Deng,He Qian,Simon M. Sze	23
13	Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage ( 2V) operation 2016 ·Ying‐Chen Chen,Yao‐Feng Chang,Burt Fowler,Fei Zhou,Xiaohan Wu,Cheng‐Chih Hsieh,(unknown),Chih-Hung Pan,Min-Chen Chen,Kuan‐Chang Chang,Tsung‐Ming Tsai,Ting‐Chang Chang,Jack C. Lee	1
14	Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM 2016 ·Applied Physics Letters ·Chih-Hung Pan,Ting‐Chang Chang,Tsung‐Ming Tsai,Kuan‐Chang Chang,Tian-Jian Chu,(unknown),Min-Chen Chen,Simon M. Sze	12
15	Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO₂-Based Resistive Random Access Memory 2016 ·IEEE Electron Device Letters ·Po‐Hsun Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,Chih‐Yang Lin,(unknown),Min-Chen Chen,Hui‐Chun Huang,Minghui Wang,Ikai Lo,Jin‐Cheng Zheng,Simon M. Sze	28
16	Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH₃ Treatment 2015 ·IEEE Electron Device Letters ·Ji Chen,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,(unknown),Jen-Chung Lou,Tian-Jian Chu,(unknown),Min-Chen Chen,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Simon M. Sze	13
17	Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory 2015 ·IEEE Electron Device Letters ·Chih‐Yang Lin,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Chih-Hung Pan,(unknown),Kuan-Hsien Liu,Hua-Mao Chen,Yi‐Ting Tseng,Ya-Chi Hung,Yong-En Syu,Jin‐Cheng Zheng,Ying-Lang Wang,Wei Zhang,Simon M. Sze	42
18	Physical and chemical mechanisms in oxide-based resistance random access memory 2015 ·Nanoscale Research Letters ·Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,(unknown),Ya-Chi Hung,Yong-En Syu,Yao‐Feng Chang,Min-Chen Chen,Tian-Jian Chu,Hsin-Lu Chen,Chih-Hung Pan,Chih‐Cheng Shih,Jin‐Cheng Zheng,Simon M. Sze	128
19	High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure 2014 ·Kuan‐Chang Chang,(unknown),Ting‐Chang Chang,Tsung‐Ming Tsai,Tian-Jian Chu,Hsin-Lu Chen,Chih‐Cheng Shih,Chih-Hung Pan,Yu‐Ting Su,Pei-Jung Wu,Simon M. Sze	15
20	High performance of graphene oxide-doped silicon oxide-based resistance random access memory 2013 ·Nanoscale Research Letters ·Rui Zhang,Kuan‐Chang Chang,Ting‐Chang Chang,Tsung‐Ming Tsai,Kai-Huang Chen,Jen-Chung Lou,Jung‐Hui Chen,Tai-Fa Young,Chih‐Cheng Shih,Ya‐Liang Yang,(unknown),Tian-Jian Chu,(unknown),Chih-Hung Pan,Yu‐Ting Su,Yong-En Syu,Simon M. Sze	18

About Chih-Hung Pan

Chih-Hung Pan is a scholar working on Polymers and Plastics, Electrical and Electronic Engineering and Toxicology, having authored 38 papers that have together received 840 indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (37 papers), Ferroelectric and Negative Capacitance Devices (29 papers) and Transition Metal Oxide Nanomaterials (15 papers). The work is most often cited by research in Polymers and Plastics (276 citations), Electrical and Electronic Engineering (816 citations) and Cellular and Molecular Neuroscience (205 citations). Chih-Hung Pan has collaborated with scholars based in Taiwan, China and United States. Frequent co-authors include Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang, Min-Chen Chen, Simon M. Sze, Tian-Jian Chu, Po‐Hsun Chen, Chih‐Cheng Shih, Jin‐Cheng Zheng and Yong-En Syu. Their work appears in journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and Chemosphere.

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