Po‐Hsun Chen

2.3k total citations
129 papers, 1.8k citations indexed

About

Po‐Hsun Chen is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, Po‐Hsun Chen has authored 129 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 104 papers in Electrical and Electronic Engineering, 31 papers in Polymers and Plastics and 29 papers in Materials Chemistry. Recurrent topics in Po‐Hsun Chen's work include Advanced Memory and Neural Computing (53 papers), Semiconductor materials and devices (42 papers) and Ferroelectric and Negative Capacitance Devices (38 papers). Po‐Hsun Chen is often cited by papers focused on Advanced Memory and Neural Computing (53 papers), Semiconductor materials and devices (42 papers) and Ferroelectric and Negative Capacitance Devices (38 papers). Po‐Hsun Chen collaborates with scholars based in Taiwan, China and United States. Po‐Hsun Chen's co-authors include Ting‐Chang Chang, Tsung‐Ming Tsai, Simon M. Sze, Eric Jein‐Wein Liou, Kuan‐Chang Chang, Yu‐Ting Su, Chih-Hung Pan, Min-Chen Chen, Yu‐Chih Wang and Hui‐Chun Huang and has published in prestigious journals such as Applied Physics Letters, Chemical Engineering Journal and ACS Applied Materials & Interfaces.

In The Last Decade

Po‐Hsun Chen

116 papers receiving 1.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Po‐Hsun Chen Taiwan 22 1.3k 330 305 225 204 129 1.8k
Hyun Jung Park South Korea 25 452 0.4× 168 0.5× 69 0.2× 50 0.2× 604 3.0× 75 1.9k
Wenjing Luo China 19 499 0.4× 342 1.0× 134 0.4× 51 0.2× 566 2.8× 44 1.8k
Chen Yang China 23 462 0.4× 250 0.8× 236 0.8× 34 0.2× 1.3k 6.2× 102 2.5k
Peng Zeng China 17 253 0.2× 221 0.7× 81 0.3× 64 0.3× 181 0.9× 49 1.1k
Huihua Yuan China 28 294 0.2× 148 0.4× 325 1.1× 132 0.6× 1.1k 5.2× 68 2.3k
Yaxiong Liu China 30 241 0.2× 169 0.5× 93 0.3× 40 0.2× 1.4k 7.1× 138 2.7k
Arnold Gillner Germany 24 469 0.4× 313 0.9× 67 0.2× 51 0.2× 1.1k 5.2× 184 2.7k
Andrés Díaz Lantada Spain 26 153 0.1× 252 0.8× 224 0.7× 54 0.2× 1.0k 5.0× 159 2.2k
Feng Lin China 28 258 0.2× 341 1.0× 67 0.2× 58 0.3× 1.4k 6.9× 126 2.9k
Yonglin Yu China 26 594 0.5× 476 1.4× 39 0.1× 21 0.1× 1.4k 6.7× 125 2.6k

Countries citing papers authored by Po‐Hsun Chen

Since Specialization
Citations

This map shows the geographic impact of Po‐Hsun Chen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Po‐Hsun Chen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Po‐Hsun Chen more than expected).

Fields of papers citing papers by Po‐Hsun Chen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Po‐Hsun Chen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Po‐Hsun Chen. The network helps show where Po‐Hsun Chen may publish in the future.

Co-authorship network of co-authors of Po‐Hsun Chen

This figure shows the co-authorship network connecting the top 25 collaborators of Po‐Hsun Chen. A scholar is included among the top collaborators of Po‐Hsun Chen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Po‐Hsun Chen. Po‐Hsun Chen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wong, Joyce, Pu Hu, Hongta Yang, et al.. (2025). Viologen Salt Bridge‐Equipped Ionic Covalent Organic Polymers Directed toward Anionic Adsorption. Advanced Engineering Materials. 28(1).
2.
Chen, Po‐Hsun, et al.. (2023). Improving High Resistance State in One-Transistor-One-Resistor (1T1R) Structure Resistance Random Access Memory With a Body-Biased Method. IEEE Transactions on Electron Devices. 70(3). 1014–1018. 7 indexed citations
3.
Huynh, Thanh Anh, Po‐Hsun Chen, & Min‐Fu Hsieh. (2022). Analysis and Comparison of Operational Characteristics of Electric Vehicle Traction Units Combining Two Different Types of Motors. IEEE Transactions on Vehicular Technology. 71(6). 5727–5742. 20 indexed citations
4.
Chen, Po‐Hsun, et al.. (2022). A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM). IEEE Transactions on Electron Devices. 69(4). 1811–1815. 5 indexed citations
5.
Chen, Po‐Hsun, et al.. (2022). Analysis of the buffer trap-induced kink effect in AlGaN/GaN HEMT on SiC substrate. Semiconductor Science and Technology. 37(8). 85022–85022. 3 indexed citations
6.
Chen, Po‐Hsun, Ting‐Chang Chang, Tsung‐Ming Tsai, et al.. (2022). Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs. IEEE Transactions on Electron Devices. 69(5). 2423–2429. 3 indexed citations
7.
8.
Hsieh, Min‐Fu, et al.. (2021). Development of Supercapacitor-Aided Hybrid Energy Storage System to Enhance Battery Life Cycle of Electric Vehicles. Sustainability. 13(14). 7682–7682. 14 indexed citations
9.
Lin, Chih-Yang, Yi‐Ting Tseng, Po‐Hsun Chen, et al.. (2020). A high-speed MIM resistive memory cell with an inherent vanadium selector. Applied Materials Today. 21. 100848–100848. 15 indexed citations
10.
Chen, Hong-Chih, Po‐Hsun Chen, Ann‐Kuo Chu, et al.. (2020). Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors. IEEE Transactions on Electron Devices. 67(8). 3163–3166. 12 indexed citations
11.
Lin, Chien-Yu, Min-Chen Chen, Wei‐Chun Hung, et al.. (2020). Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs. IEEE Transactions on Electron Devices. 67(12). 5403–5407. 14 indexed citations
12.
Lin, Chih‐Yang, Po‐Hsun Chen, Wei‐Chen Huang, et al.. (2020). A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices. Materials Today Physics. 13. 100201–100201. 10 indexed citations
13.
Chen, Po‐Hsun, et al.. (2020). Fully-transparent resistance switching memristor based on indium-tin-oxide material. Journal of Micromechanics and Microengineering. 30(4). 45003–45003. 6 indexed citations
14.
Chen, Hong-Chih, Ting‐Chang Chang, Wei‐Chih Lai, et al.. (2019). Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment. ACS Applied Materials & Interfaces. 11(43). 40196–40203. 37 indexed citations
15.
Chen, Po‐Hsun, Min-Chen Chen, Ting‐Chang Chang, et al.. (2019). Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory. IEEE Transactions on Electron Devices. 66(6). 2595–2599. 7 indexed citations
16.
Lin, Chih‐Yang, Po‐Hsun Chen, Ting‐Chang Chang, et al.. (2018). The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector. IEEE Transactions on Electron Devices. 65(10). 4622–4627. 31 indexed citations
17.
Yang, Chih-Cheng, Po‐Hsun Chen, Yu‐Ting Su, et al.. (2018). Integrating a Charge Trapping Layer in Passivated Emitter Rear Contact Cell to Enhance Efficiency. IEEE Electron Device Letters. 39(7). 983–986. 2 indexed citations
18.
Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2017). Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications. Applied Surface Science. 414. 224–229. 19 indexed citations
19.
Lin, Chih-Yang, Po‐Hsun Chen, Ting‐Chang Chang, et al.. (2017). Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode. Nanoscale. 9(25). 8586–8590. 58 indexed citations
20.
Chen, Po‐Hsun, Ting‐Chang Chang, Kuan‐Chang Chang, et al.. (2016). Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory. IEEE Transactions on Electron Devices. 63(12). 4769–4775. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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