Gaobo Xu

1.1k total citations
89 papers, 677 citations indexed

About

Gaobo Xu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Gaobo Xu has authored 89 papers receiving a total of 677 indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 12 papers in Biomedical Engineering. Recurrent topics in Gaobo Xu's work include Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). Gaobo Xu is often cited by papers focused on Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). Gaobo Xu collaborates with scholars based in China, Singapore and United States. Gaobo Xu's co-authors include Huaxiang Yin, Jinshun Bi, Qingzhu Zhang, Zhaohao Zhang, Zhenhua Wu, Jun Luo, Qiuxia Xu, Tianchun Ye, Jinjuan Xiang and Junjie Li and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Gaobo Xu

83 papers receiving 646 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Gaobo Xu China 13 648 157 91 33 27 89 677
C. Jahan France 14 687 1.1× 151 1.0× 43 0.5× 49 1.5× 39 1.4× 41 728
Shaoan Yan China 12 266 0.4× 173 1.1× 28 0.3× 20 0.6× 28 1.0× 49 342
Yuye Kang Singapore 16 657 1.0× 216 1.4× 105 1.2× 67 2.0× 16 0.6× 68 706
Zhaowu Tang China 11 284 0.4× 303 1.9× 73 0.8× 24 0.7× 17 0.6× 12 553
Jongmin Kim South Korea 13 432 0.7× 192 1.2× 40 0.4× 72 2.2× 73 2.7× 66 524
Chengru Gu China 14 381 0.6× 203 1.3× 65 0.7× 26 0.8× 35 1.3× 24 446
D. V. Negrov Russia 10 356 0.5× 227 1.4× 61 0.7× 44 1.3× 12 0.4× 22 430
Qiangxiang Peng China 14 501 0.8× 391 2.5× 114 1.3× 32 1.0× 24 0.9× 39 600
Qiwen Kong Singapore 12 396 0.6× 122 0.8× 39 0.4× 21 0.6× 12 0.4× 61 424
Edward J. Bawolek United States 10 296 0.5× 107 0.7× 105 1.2× 22 0.7× 35 1.3× 28 367

Countries citing papers authored by Gaobo Xu

Since Specialization
Citations

This map shows the geographic impact of Gaobo Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gaobo Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gaobo Xu more than expected).

Fields of papers citing papers by Gaobo Xu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gaobo Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gaobo Xu. The network helps show where Gaobo Xu may publish in the future.

Co-authorship network of co-authors of Gaobo Xu

This figure shows the co-authorship network connecting the top 25 collaborators of Gaobo Xu. A scholar is included among the top collaborators of Gaobo Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Gaobo Xu. Gaobo Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Guilei, et al.. (2025). The Investigation of the Hysteresis and Reliability Mechanism of Amorphous Oxide Semiconductor Thin-Film Transistors Applied in Dynamic Random Access Memory. IEEE Transactions on Electron Devices. 72(4). 1763–1768. 2 indexed citations
2.
Yang, Yanyu, Guilei Wang, Gaobo Xu, et al.. (2024). The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors. IEEE Journal of the Electron Devices Society. 12. 613–618. 1 indexed citations
3.
Yang, Hong, Qingzhu Zhang, Yue Peng, et al.. (2024). Unique Consecutive RTN Characteristics Coupled With Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs. IEEE Electron Device Letters. 45(4). 566–569. 2 indexed citations
4.
Ma, Xueli, Jinjuan Xiang, Gaobo Xu, et al.. (2024). Unveiling the Unique Region Dependence of Bias Stability in Sub-μm IGZO TFTs Using Floating Channel Effect for 3D DRAM. IEEE Electron Device Letters. 46(2). 290–293. 1 indexed citations
5.
Zhang, Zhaohao, Qingzhu Zhang, Genquan Han, et al.. (2024). Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C). IEEE Electron Device Letters. 45(7). 1193–1196.
6.
Zhang, Yongkui, Yangyang Li, Huilong Zhu, et al.. (2023). First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions. ECS Journal of Solid State Science and Technology. 12(7). 74009–74009. 1 indexed citations
7.
Li, Mengzhao, Z. Liang, Mei Zhao, et al.. (2023). The Performance of Large-Pitch AC-LGAD With Different N+ Dose. IEEE Transactions on Nuclear Science. 70(8). 2134–2138. 1 indexed citations
8.
Zhang, Zhaohao, Shujuan Mao, Gaobo Xu, et al.. (2023). An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors. IEEE Transactions on Electron Devices. 70(3). 1029–1033. 10 indexed citations
9.
Xu, Gaobo, Huaxiang Yin, Zhaohao Zhang, et al.. (2022). Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology. Advanced Materials Interfaces. 9(24). 10 indexed citations
10.
Zhao, B.R., et al.. (2022). Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing. Nanomaterials. 12(17). 3001–3001. 9 indexed citations
11.
Yin, Huaxiang, Yadong Zhang, Xiaosi Tan, et al.. (2022). Quasi-Volatile MoS2 Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation. ACS Applied Materials & Interfaces. 14(51). 57440–57448. 8 indexed citations
12.
Gu, Jie, Qingzhu Zhang, Zhenhua Wu, et al.. (2021). Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors. IEEE Journal of the Electron Devices Society. 10. 35–39. 21 indexed citations
13.
Gu, Jie, Qingzhu Zhang, Zhenhua Wu, et al.. (2021). Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs. Nanomaterials. 11(2). 309–309. 19 indexed citations
14.
Xu, Qiuxia, Gaobo Xu, Jinjuan Xiang, et al.. (2021). Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs. IEEE Transactions on Electron Devices. 68(7). 3696–3701. 5 indexed citations
15.
Zhang, Qingzhu, Jie Gu, Lei Cao, et al.. (2021). Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices. Nanomaterials. 11(3). 646–646. 48 indexed citations
16.
Xi, Kai, Jinshun Bi, Gaobo Xu, et al.. (2020). Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction. Applied Physics A. 126(6). 9 indexed citations
17.
Gu, Jie, Zhenhua Wu, Qingzhu Zhang, et al.. (2020). Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate. IEEE Transactions on Electron Devices. 68(1). 405–410. 5 indexed citations
18.
Li, Yongliang, Guilei Wang, Anyan Du, et al.. (2019). Process optimization of the Si 0.7 Ge 0.3 Fin Formation for the STI first scheme. Semiconductor Science and Technology. 34(12). 125008–125008. 7 indexed citations
19.
Li, Yongliang, Haoyan Liu, Guilei Wang, et al.. (2019). Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device. Journal of Materials Science Materials in Electronics. 31(8). 5854–5860. 1 indexed citations
20.
Chang, Yao‐Feng, Burt Fowler, Ying‐Chen Chen, et al.. (2018). Beyond SiOx: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria. Journal of Materials Chemistry C. 6(47). 12788–12799. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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