Gaobo Xu

1.1k total citations
89 papers, 677 citations indexed

About

Gaobo Xu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Gaobo Xu has authored 89 papers receiving a total of 677 indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 21 papers in Materials Chemistry and 12 papers in Biomedical Engineering. Recurrent topics in Gaobo Xu's work include Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). Gaobo Xu is often cited by papers focused on Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers) and Ferroelectric and Negative Capacitance Devices (39 papers). Gaobo Xu collaborates with scholars based in China, Singapore and United States. Gaobo Xu's co-authors include Huaxiang Yin, Jinshun Bi, Qingzhu Zhang, Zhaohao Zhang, Zhenhua Wu, Jun Luo, Qiuxia Xu, Tianchun Ye, Jinjuan Xiang and Junjie Li and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and ACS Applied Materials & Interfaces.

In The Last Decade

Gaobo Xu

83 papers receiving 646 citations

Peers

Countries citing papers authored by Gaobo Xu

Since Specialization

Citations

This map shows the geographic impact of Gaobo Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gaobo Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gaobo Xu more than expected).

Fields of papers citing papers by Gaobo Xu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gaobo Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gaobo Xu. The network helps show where Gaobo Xu may publish in the future.

Co-authorship network of co-authors of Gaobo Xu

This figure shows the co-authorship network connecting the top 25 collaborators of Gaobo Xu. A scholar is included among the top collaborators of Gaobo Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Gaobo Xu. Gaobo Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	The Investigation of the Hysteresis and Reliability Mechanism of Amorphous Oxide Semiconductor Thin-Film Transistors Applied in Dynamic Random Access Memory 2025 ·IEEE Transactions on Electron Devices ·(unknown), (unknown), (unknown), (unknown), Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao, Jun Luo	2
2	The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors 2024 ·IEEE Journal of the Electron Devices Society ·(unknown), Yanyu Yang, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao, Jun Luo	1
3	Unique Consecutive RTN Characteristics Coupled With Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs 2024 ·IEEE Electron Device Letters ·(unknown), Hong Yang, Qingzhu Zhang, Yue Peng, Jiahui Duan, Hao Xu, (unknown), Xiaolei Wang, Gaobo Xu, Zhaohao Zhang, Zhenhua Wu, Genquan Han, Huaxiang Yin, Yan Liu	2
4	Unveiling the Unique Region Dependence of Bias Stability in Sub-μm IGZO TFTs Using Floating Channel Effect for 3D DRAM 2024 ·IEEE Electron Device Letters ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Xueli Ma, Jinjuan Xiang, Gaobo Xu, Guilei Wang, Chao Zhao, Huaxiang Yin	1
5	Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C) 2024 ·IEEE Electron Device Letters ·(unknown), (unknown), Zhaohao Zhang, Qingzhu Zhang, (unknown), (unknown), Genquan Han, Gaobo Xu, Junfeng Li, Yan Liu, (unknown), Huaxiang Yin	0
6	First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions 2023 ·ECS Journal of Solid State Science and Technology ·Yongkui Zhang, Yangyang Li, Huilong Zhu, Qi Wang, Yong Du, (unknown), Junjie Li, Zhenzhen Kong, Xiaobin He, Jinbiao Liu, Chen Li, Weixing Huang, (unknown), (unknown), Gaobo Xu, Guilei Wang, Chao Zhao, Jun Luo	1
7	The Performance of Large-Pitch AC-LGAD With Different N+ Dose 2023 ·IEEE Transactions on Nuclear Science ·Mengzhao Li, (unknown), Z. Liang, Mei Zhao, (unknown), (unknown), (unknown), (unknown), W. Wang, (unknown), Bo Liu, (unknown), C. Yu, Xinhui Huang, Y. K. Heng, Gaobo Xu	1
8	An Ultra-Dense One-Transistor Ternary-Content-Addressable Memory Array Based on Non-Volatile and Ambipolar Fin Field-Effect Transistors 2023 ·IEEE Transactions on Electron Devices ·Zhaohao Zhang, Shujuan Mao, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Huaxiang Yin, Tianchun Ye	10
9	Improved Ferroelectricity and Endurance of Hf_0.5Zr_0.5O₂ Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology 2022 ·Advanced Materials Interfaces ·(unknown), Gaobo Xu, Huaxiang Yin, (unknown), Zhaohao Zhang, Lianlian Li, (unknown), Jia Chen, Yadong Zhang, Jinshun Bi, Jinjuan Xiang, Jinbiao Liu, Zhenhua Wu, Jun Luo, (unknown)	10
10	Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing 2022 ·Nanomaterials ·B.R. Zhao, (unknown), Jinshun Bi, Gaobo Xu, Yannan Xu, (unknown), (unknown), Mengxin Liu	9
11	Quasi-Volatile MoS₂ Barristor Memory for 1T Compact Neuron by Correlative Charges Trapping and Schottky Barrier Modulation 2022 ·ACS Applied Materials & Interfaces ·(unknown), Huaxiang Yin, Yadong Zhang, Xiaosi Tan, Yunwei Mao, Chuan Zhang, (unknown), (unknown), Zhaohao Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu	8
12	Narrow Sub-Fin Technique for Suppressing Parasitic-Channel Effect in Stacked Nanosheet Transistors 2021 ·IEEE Journal of the Electron Devices Society ·Jie Gu, Qingzhu Zhang, Zhenhua Wu, (unknown), Lei Cao, (unknown), Jiaxin Yao, Zhaohao Zhang, Gaobo Xu, Huaxiang Yin, Jun Luo, (unknown)	21
13	Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs 2021 ·Nanomaterials ·Jie Gu, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, (unknown), (unknown), Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Jun Luo, Wenwu Wang, Tianchun Ye	19
14	Physical Thickness 1.5-nm HfZrO Negative Capacitance NMOSFETs 2021 ·IEEE Transactions on Electron Devices ·Qiuxia Xu, (unknown), Gaobo Xu, Jinjuan Xiang, Jianfeng Gao, Xiaolei Wang, Junjie Li, Xiaobin He, Junfeng Li, Wenwu Wang, Dapeng Chen	5
15	Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices 2021 ·Nanomaterials ·Qingzhu Zhang, Jie Gu, (unknown), Lei Cao, Junjie Li, Zhenhua Wu, Guilei Wang, Jiaxin Yao, Zhaohao Zhang, Jinjuan Xiang, Xiaobin He, Zhenzhen Kong, Hong Yang, Jiajia Tian, Gaobo Xu, Shujuan Mao, Henry H. Radamson, Huaxiang Yin, Jun Luo	48
16	Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction 2020 ·Applied Physics A ·Kai Xi, Jinshun Bi, (unknown), Gaobo Xu, Bo Li, Haibin Wang, Ming Liu, (unknown)	9
17	Quantum Dot With a Diamond-Shaped Channel MOSFET on a Bulk Si Substrate 2020 ·IEEE Transactions on Electron Devices ·Jie Gu, Zhenhua Wu, Qingzhu Zhang, Jiaxin Yao, Zhaohao Zhang, Junjie Li, (unknown), (unknown), Gaobo Xu, Huaxiang Yin, Junfeng Li, (unknown), Tianchun Ye	5
18	Process optimization of the Si _0.7 Ge _0.3 Fin Formation for the STI first scheme 2019 ·Semiconductor Science and Technology ·(unknown), Yongliang Li, Guilei Wang, Anyan Du, (unknown), Qingzhu Zhang, Gaobo Xu, Yongkui Zhang, Jun Luo, Junfeng Li, Wenwu Wang	7
19	Investigation on the formation technique of SiGe Fin for the high mobility channel FinFET device 2019 ·Journal of Materials Science Materials in Electronics ·(unknown), (unknown), Yongliang Li, (unknown), Haoyan Liu, Guilei Wang, Anyan Du, Junjie Li, Qingzhu Zhang, Gaobo Xu, Xueli Ma, Xiaolei Wang, Hong Yang, Jing Xu, Jun Luo, Junfeng Li, Huaxiang Yin, (unknown)	1
20	Beyond SiO_x: an active electronics resurgence and biomimetic reactive oxygen species production and regulation from mitochondria 2018 ·Journal of Materials Chemistry C ·Yao‐Feng Chang, Burt Fowler, Ying‐Chen Chen, Chih-Yang Lin, Gaobo Xu, Hui‐Chun Huang, Jia Chen, Sungjun Kim, Yi Li, Jack C. Lee	9

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact