Qing Luo

4.5k citations

142 papers · 3.2k indexed · 2 hit papers · h-index 30

Electrical and Electronic Engineering top 1%
- Ferroelectric and Negative Capacitance Devices 94
- Advanced Memory and Neural Computing 86
- Semiconductor materials and devices 67
Cellular and Molecular Neuroscience top 5%
- Neuroscience and Neural Engineering 12
- Photoreceptor and optogenetics research 7
Polymers and Plastics top 5%
Materials Chemistry top 5%
- MXene and MAX Phase Materials 20
- Ferroelectric and Piezoelectric Materials 8
Cognitive Neuroscience top 5%
Nuclear and High Energy Physics
- Nuclear physics research studies 7

Co-authors: Qi Liu Ming Liu Hangbing Lv Xiaoxin Xu Tiancheng Gong Peng Yuan Otto J. Gregory Xumeng Zhang
Cited by: Electrical and Electronic Engineering Cellular and Molecular Neuroscience Polymers and Plastics
Journals: Science (1 paper)Advanced Materials (1 paper)Nature Communications (4 papers)
Partner nations: China United States Singapore

In The Last Decade

Qing Luo

140 papers receiving 3.1k citations

Hit Papers

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Peers

Countries citing papers authored by Qing Luo

Since Specialization

Citations

This map shows the geographic impact of Qing Luo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qing Luo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qing Luo more than expected).

Fields of papers citing papers by Qing Luo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qing Luo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qing Luo. The network helps show where Qing Luo may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Qing Luo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Qing Luo Line = papers co-authored together Qing Luo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf_0.5Zr_0.5O₂ Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer Advanced Electronic Materials ·Shuxian Lyu,Xiao Long,Yang Yang,Wei Wei,Yuanxiang Chen,Hong Xie,Bowen Nie,Boping Wang,Yuan Wang,Pengfei Jiang,Tiancheng Gong,Yan Wang,Qing Luo	2024	2
2	Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines Fundamental Research ·Xufan Li,Zhenhua Wu,G. Rzepa,M. Karner,Haoqing Xu,Zhicheng Wu,Wei Wang,Guanhua Yang,Qing Luo,Lingfei Wang,Ling Li	2024	13
3	Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware Nature Communications ·Long Liu,Di Wang,Dandan Wang,Yan Sun,Huai Lin,Xiliang Gong,Yifan Zhang,Ruifeng Tang,Zhihong Mai,Zhipeng Hou,Yumeng Yang,Peng Li,Lan Wang,Qing Luo,Ling Li,Guozhong Xing,Ming Liu	2024	37
4	A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing Nature Communications ·Xu Han,Dashan Shang,Qing Luo,Junjie An,Yue Li,Shuyu Wu,Zhihong Yao,Woyu Zhang,Xiaoxin Xu,Chunmeng Dou,Hao Jiang,Liyang Pan,Xumeng Zhang,Ming Wang,Zhongrui Wang,Jianshi Tang,Qi Liu,Ming Liu	2023	38
5	HfO₂-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications IEEE Electron Device Letters ·Yuan Wang,Yang Yang,Pengfei Jiang,Shuxian Lv,Boping Wang,Yuting Chen,Yaxin Ding,Tiancheng Gong,Bing Chen,Ran Cheng,Xiao Yu,Qing Luo	2023	8
6	A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier IEEE Journal of Solid-State Circuits ·Qiqiao Wu,Yue Cao,Qing Luo,Haijun Jiang,Zhongze Han,Yongkang Han,Chunmeng Dou,Hangbing Lv,Qi Liu,Jianguo Yang,Ming Liu	2023	13
7	A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance IEEE Electron Device Letters ·Xiaoyang Ma,Shan Deng,Juejian Wu,Zijian Zhao,David Lehninger,Tarek Ali,Konrad Seidel,Sourav De,Xiyu He,Yiming Chen,Huazhong Yang,Vijaykrishnan Narayanan,Suman Datta,Thomas Kämpfe,Qing Luo,Kai Ni,Xueqing Li	2023	10
8	A computing-in-memory macro based on three-dimensional resistive random-access memory Nature Electronics ·Qiang Huo,Yang Yi-ming,Yiming Wang,Dengyun Lei,Xiangqu Fu,Qirui Ren,Xiaoxin Xu,Qing Luo,Guozhong Xing,Chengying Chen,Xin Si,Hao Wu,Yiyang Yuan,Qiang Li,Xiaoran Li,Xinghua Wang,Meng‐Fan Chang,Feng Zhang,Ming Liu	2022	96
9	A Homogeneous, Reconfigurable, and Efficient Implementation of PUF in 3-D Selector-Free RRAM IEEE Transactions on Electron Devices ·Yiming Wang,Qiang Huo,Xiaoxin Xu,Fei Tan,Rui Gao,Qing Luo,Yang Yi-ming,Qirui Ren,Xiaojin Zhao,Xinghua Wang,Dengyun Lei,Feng Zhang	2021	6
10	Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement IEEE Electron Device Letters ·Tiancheng Gong,Danian Dong,Qing Luo,Xiaoxin Xu,Jianguo Yang,Jie Yu,Qingting Ding,Hangbing Lv,Ming Liu	2021	4
11	An artificial spiking afferent nerve based on Mott memristors for neuroroboticsbreakdown → Nature Communications ·Xumeng Zhang,Ye Zhuo,Qing Luo,Zuheng Wu,Rivu Midya,Zhongrui Wang,Wenhao Song,Rui Wang,Navnidhi K. Upadhyay,Yilin Fang,Fatemeh Kiani,Mingyi Rao,Yang Yang,Qiangfei Xia,Qi Liu,Ming Liu,J. Joshua Yang	2020	321
12	Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory IEEE Electron Device Letters ·Qiang Huo,Renjun Song,Dengyun Lei,Qing Luo,Zhenhua Wu,Zuheng Wu,Xiaojin Zhao,Feng Zhang,Ling Li,Ming Liu	2020	18
13	Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode IEEE Electron Device Letters ·Rongrong Cao,Qi Liu,Ming Liu,Bing Song,Dashan Shang,Yang Yang,Qing Luo,Shuyu Wu,Yue Li,Yan Wang,Hangbing Lv	2019	117
14	Memory Switching and Threshold Switching in a 3D Nanoscaled NbO_X System IEEE Electron Device Letters ·Qing Luo,Xumeng Zhang,Jie Yu,Wei Wang,Tiancheng Gong,Xiaoxin Xu,Jiahao Yin,Peng Yuan,Lu Tai,Danian Dong,Hangbing Lv,Shibing Long,Qi Liu,Ming Liu	2019	28
15	Composition-Dependent Ferroelectric Properties in Sputtered Hf_XZr_1−XO₂ Thin Films IEEE Electron Device Letters ·Qing Luo,Haili Ma,Hai-Lei Su,Kan‐Hao Xue,Rongrong Cao,Zhaomeng Gao,Jie Yu,Tiancheng Gong,Xiaoxin Xu,Jiahao Yin,Peng Yuan,Lu Tai,Danian Dong,Shibing Long,Qi Liu,Xiangshui Miao,Hangbing Lv,Ming Liu	2019	41
16	A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design IEEE Transactions on Electron Devices ·Ying Zhao,Cong Fang,Xumeng Zhang,Xiaoxin Xu,Tiancheng Gong,Qing Luo,Chengying Chen,Qi Liu,Hangbing Lv,Qiang Li,Feng Zhang,Ling Li,Ming Liu	2018	24
17	Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory IEEE Electron Device Letters ·Tiancheng Gong,Qing Luo,Xiaoxin Xu,Jie Yu,Danian Dong,Hangbing Lv,Peng Yuan,Chuanbing Chen,Jiahao Yin,Lu Tai,Xi Zhu,Qi Liu,Shibing Long,Ming Liu	2018	8
18	Unveiling the Switching Mechanism of a TaO_{<italic>x</italic>}/HfO₂ Self-Selective Cell by Probing the Trap Profiles With RTN Measurements IEEE Electron Device Letters ·Tiancheng Gong,Qing Luo,Hangbing Lv,Xiaoxin Xu,Jie Yu,Peng Yuan,Danian Dong,Chuanbing Chen,Jiahao Yin,Lu Tai,Xi Zhu,Qi Liu,Shibing Long,Ming Liu	2018	9
19	A Self-Rectifying Resistive Switching Device Based on HfO₂/TaO<inline-formula> <tex-math notation="LaTeX">$_{{x}}$ </tex-math> </inline-formula> Bilayer Structure IEEE Transactions on Electron Devices ·Haili Ma,Xumeng Zhang,Facai Wu,Qing Luo,Tiancheng Gong,Peng Yuan,Xiaoxin Xu,Yu Liu,Shengjie Zhao,Kaiping Zhang,Cheng Lu,Peiwen Zhang,Jie Feng,Hangbing Lv,Ming Liu	2018	31
20	Uniformity and Retention Improvement of TaO_x-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering IEEE Electron Device Letters ·Tiancheng Gong,Qing Luo,Xiaoxin Xu,Peng Yuan,Haili Ma,Chuanbing Chen,Qi Liu,Shibing Long,Hangbing Lv,Ming Liu	2017	13

About Qing Luo

Qing Luo is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Cellular and Molecular Neuroscience, having authored 142 papers that have together received 3.2k indexed citations. Recurring topics across this work include Ferroelectric and Negative Capacitance Devices (94 papers), Advanced Memory and Neural Computing (86 papers), Semiconductor materials and devices (67 papers), MXene and MAX Phase Materials (20 papers), Neuroscience and Neural Engineering (12 papers), Ferroelectric and Piezoelectric Materials (8 papers), Photoreceptor and optogenetics research (7 papers) and Nuclear physics research studies (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.7k citations), Cellular and Molecular Neuroscience (624 citations) and Polymers and Plastics (343 citations). Qing Luo has collaborated with scholars based in China, United States and Singapore. Frequent co-authors include Qi Liu, Ming Liu, Hangbing Lv, Xiaoxin Xu, Tiancheng Gong, Peng Yuan, Otto J. Gregory, Xumeng Zhang, Pengfei Jiang and Yuan Wang. Their work appears in journals such as Science, Advanced Materials and Nature Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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