Qing Luo

4.5k total citations · 2 hit papers
142 papers, 3.2k citations indexed

About

Qing Luo is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Qing Luo has authored 142 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 121 papers in Electrical and Electronic Engineering, 35 papers in Materials Chemistry and 16 papers in Cellular and Molecular Neuroscience. Recurrent topics in Qing Luo's work include Ferroelectric and Negative Capacitance Devices (94 papers), Advanced Memory and Neural Computing (86 papers) and Semiconductor materials and devices (67 papers). Qing Luo is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (94 papers), Advanced Memory and Neural Computing (86 papers) and Semiconductor materials and devices (67 papers). Qing Luo collaborates with scholars based in China, United States and Singapore. Qing Luo's co-authors include Qi Liu, Ming Liu, Hangbing Lv, Xiaoxin Xu, Tiancheng Gong, Peng Yuan, Otto J. Gregory, Xumeng Zhang, Pengfei Jiang and Yuan Wang and has published in prestigious journals such as Science, Advanced Materials and Nature Communications.

In The Last Decade

Qing Luo

140 papers receiving 3.1k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

An artificial spiking afferent nerve based on Mott memristors for neurorobotics

2020 321 citations Xumeng Zhang, Ye Zhuo et al. Nature Communications profile →
A stable rhombohedral phase in ferroelectric Hf(Zr) ₁₊ _x O ₂ capacitor with ultralow coercive field

2023 127 citations Yuan Wang, Qing Luo et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Qing Luo China	30	2.7k	927	624	343	298	142	3.2k
Elisa Vianello France	31	2.9k 1.1×	494 0.5×	739 1.2×	248 0.7×	78 0.3×	168	3.4k
Yuhui He China	31	2.2k 0.8×	746 0.8×	558 0.9×	246 0.7×	1.4k 4.5×	113	3.1k
Yao‐Feng Chang United States	33	2.6k 1.0×	483 0.5×	992 1.6×	592 1.7×	340 1.1×	121	3.4k
J.B. Roldán Spain	32	3.5k 1.3×	496 0.5×	932 1.5×	253 0.7×	243 0.8×	212	3.9k
Kentaro Kinoshita Japan	23	2.0k 0.7×	607 0.7×	233 0.4×	506 1.5×	131 0.4×	176	2.5k
Chenhsin Lien Taiwan	28	2.9k 1.1×	1.3k 1.5×	384 0.6×	412 1.2×	284 1.0×	127	3.4k
A. I. Belov Russia	20	1.0k 0.4×	332 0.4×	495 0.8×	104 0.3×	127 0.4×	110	1.5k
Alexey Mikhaylov Russia	21	1.6k 0.6×	503 0.5×	729 1.2×	160 0.5×	173 0.6×	165	2.2k
Hugh Barnaby United States	34	4.3k 1.6×	430 0.5×	410 0.7×	216 0.6×	166 0.6×	223	4.5k
Warren B. Jackson United States	21	2.3k 0.9×	1.1k 1.2×	207 0.3×	613 1.8×	423 1.4×	67	2.9k

Countries citing papers authored by Qing Luo

Since Specialization

Citations

This map shows the geographic impact of Qing Luo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Qing Luo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Qing Luo more than expected).

Fields of papers citing papers by Qing Luo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Qing Luo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Qing Luo. The network helps show where Qing Luo may publish in the future.

Co-authorship network of co-authors of Qing Luo

This figure shows the co-authorship network connecting the top 25 collaborators of Qing Luo. A scholar is included among the top collaborators of Qing Luo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Qing Luo. Qing Luo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Long, Xiao, Yuanxiang Chen, Hong Xie, et al.. (2024). Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf_0.5Zr_0.5O₂ Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer. Advanced Electronic Materials. 11(3). 2 indexed citations

Li, Xufan, Zhenhua Wu, G. Rzepa, et al.. (2024). Overview of emerging semiconductor device model methodologies: From device physics to machine learning engines. Fundamental Research. 5(5). 2149–2160. 13 indexed citations

Wang, Di, Dandan Wang, Yan Sun, et al.. (2024). Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware. Nature Communications. 15(1). 4534–4534. 37 indexed citations

Shang, Dashan, Qing Luo, Junjie An, et al.. (2023). A low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing. Nature Communications. 14(1). 6385–6385. 38 indexed citations

Wang, Yuan, Yang Yang, Pengfei Jiang, et al.. (2023). HfO₂-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications. IEEE Electron Device Letters. 44(6). 943–946. 8 indexed citations

Luo, Qing, Chunmeng Dou, Hangbing Lv, et al.. (2023). A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. IEEE Journal of Solid-State Circuits. 59(1). 208–218. 13 indexed citations

Deng, Shan, Juejian Wu, Zijian Zhao, et al.. (2023). A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance. IEEE Electron Device Letters. 44(7). 1088–1091. 10 indexed citations

Wang, Yiming, Dengyun Lei, Xiaoxin Xu, et al.. (2022). A computing-in-memory macro based on three-dimensional resistive random-access memory. Nature Electronics. 5(7). 469–477. 96 indexed citations

Wang, Yiming, Qiang Huo, Xiaoxin Xu, et al.. (2021). A Homogeneous, Reconfigurable, and Efficient Implementation of PUF in 3-D Selector-Free RRAM. IEEE Transactions on Electron Devices. 68(5). 2577–2581. 6 indexed citations

10.

Gong, Tiancheng, Danian Dong, Qing Luo, et al.. (2021). Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement. IEEE Electron Device Letters. 42(3). 312–314. 4 indexed citations

11.

Zhang, Xumeng, Ye Zhuo, Qing Luo, et al.. (2020). An artificial spiking afferent nerve based on Mott memristors for neurorobotics. Nature Communications. 11(1). 51–51. 321 indexed citations breakdown →

12.

Huo, Qiang, Dengyun Lei, Qing Luo, et al.. (2020). Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory. IEEE Electron Device Letters. 41(3). 497–500. 18 indexed citations

13.

Cao, Rongrong, Qi Liu, Ming Liu, et al.. (2019). Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode. IEEE Electron Device Letters. 40(11). 1744–1747. 117 indexed citations

14.

Luo, Qing, Xumeng Zhang, Jie Yu, et al.. (2019). Memory Switching and Threshold Switching in a 3D Nanoscaled NbO_X System. IEEE Electron Device Letters. 40(5). 718–721. 28 indexed citations

15.

Luo, Qing, Haili Ma, Kan‐Hao Xue, et al.. (2019). Composition-Dependent Ferroelectric Properties in Sputtered Hf_XZr_1−XO₂ Thin Films. IEEE Electron Device Letters. 40(4). 570–573. 41 indexed citations

16.

Zhao, Ying, Xumeng Zhang, Xiaoxin Xu, et al.. (2018). A Compact Model for Drift and Diffusion Memristor Applied in Neuron Circuits Design. IEEE Transactions on Electron Devices. 65(10). 4290–4296. 24 indexed citations

17.

Gong, Tiancheng, Qing Luo, Xiaoxin Xu, et al.. (2018). Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory. IEEE Electron Device Letters. 39(9). 1302–1305. 8 indexed citations

18.

Gong, Tiancheng, Qing Luo, Hangbing Lv, et al.. (2018). Unveiling the Switching Mechanism of a TaO_{<italic>x</italic>}/HfO₂ Self-Selective Cell by Probing the Trap Profiles With RTN Measurements. IEEE Electron Device Letters. 39(8). 1152–1155. 9 indexed citations

19.

Ma, Haili, Xumeng Zhang, Facai Wu, et al.. (2018). A Self-Rectifying Resistive Switching Device Based on HfO₂/TaO<inline-formula> <tex-math notation="LaTeX">$_{{x}}$ </tex-math> </inline-formula> Bilayer Structure. IEEE Transactions on Electron Devices. 66(2). 924–928. 31 indexed citations

20.

Gong, Tiancheng, Qing Luo, Xiaoxin Xu, et al.. (2017). Uniformity and Retention Improvement of TaO_x-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering. IEEE Electron Device Letters. 38(9). 1232–1235. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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