Yangyuan Wang

4.7k total citations
259 papers, 3.7k citations indexed

About

Yangyuan Wang is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Yangyuan Wang has authored 259 papers receiving a total of 3.7k indexed citations (citations by other indexed papers that have themselves been cited), including 252 papers in Electrical and Electronic Engineering, 56 papers in Biomedical Engineering and 23 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Yangyuan Wang's work include Semiconductor materials and devices (175 papers), Advancements in Semiconductor Devices and Circuit Design (154 papers) and Integrated Circuits and Semiconductor Failure Analysis (46 papers). Yangyuan Wang is often cited by papers focused on Semiconductor materials and devices (175 papers), Advancements in Semiconductor Devices and Circuit Design (154 papers) and Integrated Circuits and Semiconductor Failure Analysis (46 papers). Yangyuan Wang collaborates with scholars based in China, Hong Kong and United States. Yangyuan Wang's co-authors include Ru Huang, Runsheng Wang, Qianqian Huang, Jing Zhuge, Yimao Cai, Chunlei Wu, Le Ye, Huailin Liao, Zongwei Wang and Minghui Yin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Yangyuan Wang

241 papers receiving 3.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yangyuan Wang China 32 3.4k 815 321 315 218 259 3.7k
E. Nowak France 34 5.5k 1.6× 658 0.8× 922 2.9× 198 0.6× 465 2.1× 176 5.8k
Paolo Pavan Italy 29 3.5k 1.0× 267 0.3× 682 2.1× 254 0.8× 276 1.3× 217 3.9k
Lan Wei Canada 24 1.7k 0.5× 243 0.3× 394 1.2× 304 1.0× 146 0.7× 95 2.1k
Ya‐Chin King Taiwan 26 3.1k 0.9× 257 0.3× 516 1.6× 327 1.0× 210 1.0× 230 3.3k
Frank Ellinger Germany 36 5.9k 1.7× 1.4k 1.7× 299 0.9× 77 0.2× 567 2.6× 627 6.4k
Hugh Barnaby United States 34 4.3k 1.3× 166 0.2× 430 1.3× 410 1.3× 105 0.5× 223 4.5k
Jae‐Yoon Sim South Korea 28 2.8k 0.8× 2.2k 2.7× 136 0.4× 202 0.6× 169 0.8× 222 4.0k
Trond Ytterdal Norway 22 1.8k 0.5× 680 0.8× 142 0.4× 90 0.3× 240 1.1× 183 2.1k
Warren B. Jackson United States 21 2.3k 0.7× 423 0.5× 1.1k 3.4× 207 0.7× 283 1.3× 67 2.9k

Countries citing papers authored by Yangyuan Wang

Since Specialization
Citations

This map shows the geographic impact of Yangyuan Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yangyuan Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yangyuan Wang more than expected).

Fields of papers citing papers by Yangyuan Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yangyuan Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yangyuan Wang. The network helps show where Yangyuan Wang may publish in the future.

Co-authorship network of co-authors of Yangyuan Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Yangyuan Wang. A scholar is included among the top collaborators of Yangyuan Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yangyuan Wang. Yangyuan Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wang, Zhixuan, Ying Liu, Peng Zhou, et al.. (2021). A 148-nW Reconfigurable Event-Driven Intelligent Wake-Up System for AIoT Nodes Using an Asynchronous Pulse-Based Feature Extractor and a Convolutional Neural Network. IEEE Journal of Solid-State Circuits. 56(11). 3274–3288. 30 indexed citations
2.
Wang, Zhixuan, Yihan Zhang, Linxiao Shen, et al.. (2021). A Software-Defined Always-On System With 57–75-nW Wake-Up Function Using Asynchronous Clock-Free Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC. IEEE Journal of Solid-State Circuits. 56(9). 2804–2816. 21 indexed citations
3.
Ye, Le, Zhixuan Wang, Ying Liu, et al.. (2021). The Challenges and Emerging Technologies for Low-Power Artificial Intelligence IoT Systems. IEEE Transactions on Circuits and Systems I Regular Papers. 68(12). 4821–4834. 59 indexed citations
4.
Wang, Zhixuan, Le Ye, Ying Liu, et al.. (2021). 12.1 A 148nW General-Purpose Event-Driven Intelligent Wake-Up Chip for AIoT Devices Using Asynchronous Spike-Based Feature Extractor and Convolutional Neural Network. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 436–438. 25 indexed citations
5.
Wang, Zhixuan, Le Ye, Qianqian Huang, et al.. (2020). Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process. IEEE Transactions on Circuits and Systems I Regular Papers. 68(3). 1160–1170. 16 indexed citations
6.
Zhang, Zexuan, Shaofeng Guo, Xiaobo Jiang, et al.. (2017). New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices. 3C–3.1. 18 indexed citations
7.
Guo, Shaofeng, et al.. (2017). Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps. Scientific Reports. 7(1). 6239–6239. 19 indexed citations
8.
Wang, Zongwei, Jian Kang, Zhizhen Yu, et al.. (2016). Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering. Nanotechnology. 28(5). 55204–55204. 37 indexed citations
9.
Wang, Zongwei, Minghui Yin, Teng Zhang, et al.. (2016). Engineering incremental resistive switching in TaOxbased memristors for brain-inspired computing. Nanoscale. 8(29). 14015–14022. 284 indexed citations
10.
Wang, Yangyuan, et al.. (2008). Challenges of Process Technology in 32nm Technology Node. Journal of Semiconductors. 29(9). 1637–1653. 2 indexed citations
11.
He, Jin, Xudong Niu, Ganggang Zhang, et al.. (2006). Benchmark tests on conventional surface potential based charge-sheet models and the advanced PUNSIM development. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 3. 616. 2 indexed citations
12.
Yu, Min, et al.. (2003). Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED( the IEEE International Conference on SISPAD '02). IEICE Transactions on Electronics. 86(3). 295–300. 2 indexed citations
13.
Zhang, Shengdong, A.C.K. Chan, Ruqi Han, et al.. (2003). A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM. IEEE Transactions on Electron Devices. 50(9). 1952–1960. 2 indexed citations
14.
Wang, Yangyuan, Guoying Wu, Yilong Hao, et al.. (2002). Study of silicon-based MEMS technology and its standard process. e+i Elektrotechnik und Informationstechnik. 6 indexed citations
15.
He, Jin, Xing Zhang, Ru Huang, & Yangyuan Wang. (2002). Forward gated-diode method for extracting hot-carrier-stress-induced back interface traps in SOI/NMOSFETs. Journal of Electronics (China). 19(3). 332–336.
16.
Huang, Ru, et al.. (2001). Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. Science in China Series F Information Sciences. 44(1). 60–67. 2 indexed citations
17.
Zhang, Xing, et al.. (1998). Effect of cobalt salicide on SOI CMOS radiation characteristics. e+i Elektrotechnik und Informationstechnik. 2 indexed citations
18.
Wang, Yangyuan, et al.. (1998). Challenges for physical limitations in Si microelectronics. e+i Elektrotechnik und Informationstechnik. 2 indexed citations
19.
Wang, Yangyuan. (1998). Physical Model of Floating Body Effects and Its Suppression Study in Fully Depleted SOI MOSFETs.
20.
Wu, Guoying, Guobing Zhang, Yilong Hao, et al.. (1998). Laterally capacity sensed accelerometer fabricated with the anodic bonding and the high aspect ratio etching. e+i Elektrotechnik und Informationstechnik. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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