Weiping Bai

973 total citations
36 papers, 745 citations indexed

About

Weiping Bai is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Weiping Bai has authored 36 papers receiving a total of 745 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in Weiping Bai's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Ferroelectric and Negative Capacitance Devices (10 papers). Weiping Bai is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Ferroelectric and Negative Capacitance Devices (10 papers). Weiping Bai collaborates with scholars based in United States, China and Singapore. Weiping Bai's co-authors include N. Lu, D. L. Kwong, D.A. Antoniadis, D. L. Kwong, Andrew Ritenour, Minjoo Larry Lee, Dim‐Lee Kwong, J. Liu, Nan Lü and Xiaogang Wang and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

Weiping Bai

33 papers receiving 707 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Weiping Bai United States 13 710 206 161 70 22 36 745
C. D’Emic United States 11 605 0.9× 197 1.0× 115 0.7× 49 0.7× 39 1.8× 15 630
E. Kiewra United States 14 684 1.0× 85 0.4× 206 1.3× 66 0.9× 33 1.5× 37 704
Ganesh Samudra Singapore 15 546 0.8× 165 0.8× 118 0.7× 64 0.9× 18 0.8× 33 567
S.-H. Lo United States 7 909 1.3× 234 1.1× 111 0.7× 44 0.6× 52 2.4× 16 933
Hiroaki Arimura Belgium 15 620 0.9× 95 0.5× 82 0.5× 95 1.4× 20 0.9× 96 651
J. Siegert Austria 10 271 0.4× 114 0.6× 189 1.2× 68 1.0× 21 1.0× 33 328
Dawei Heh United States 21 1.1k 1.5× 226 1.1× 91 0.6× 59 0.8× 62 2.8× 73 1.1k
A. St. Amour United States 10 460 0.6× 106 0.5× 196 1.2× 44 0.6× 10 0.5× 16 478
C.H. Ling Singapore 14 585 0.8× 124 0.6× 95 0.6× 27 0.4× 32 1.5× 77 614
M.F. Li Singapore 11 598 0.8× 110 0.5× 69 0.4× 45 0.6× 29 1.3× 20 612

Countries citing papers authored by Weiping Bai

Since Specialization
Citations

This map shows the geographic impact of Weiping Bai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Weiping Bai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Weiping Bai more than expected).

Fields of papers citing papers by Weiping Bai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Weiping Bai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Weiping Bai. The network helps show where Weiping Bai may publish in the future.

Co-authorship network of co-authors of Weiping Bai

This figure shows the co-authorship network connecting the top 25 collaborators of Weiping Bai. A scholar is included among the top collaborators of Weiping Bai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Weiping Bai. Weiping Bai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ma, Cheng, XU Shi-ying, Jin Wang, et al.. (2024). The effect of prescribed burning on the growth and regeneration of Pinus yunnanensis. Forest Ecology and Management. 578. 122460–122460.
2.
Zhang, Ling, Weiping Bai, & Chunxia Xiao. (2024). Density‐Aware Diffusion Model for Efficient Image Dehazing. Computer Graphics Forum. 43(7). 1 indexed citations
3.
Peng, Jinlan, Guangwei Xu, Xianqin Hu, et al.. (2024). Improved Dielectric Constant and Leakage Current of ZrO₂-Based Metal–Insulator–Metal Capacitors by Si Doping. IEEE Transactions on Electron Devices. 71(8). 4914–4919. 4 indexed citations
5.
Xu, Guangwei, Song He, Xianqin Hu, et al.. (2022). The Effects of Postdeposition Anneal and Postmetallization Anneal on Electrical Properties of TiN/ZrO 2 /TiN Capacitors. IEEE Transactions on Electron Devices. 70(1). 59–64. 10 indexed citations
6.
Su, Xingsong, et al.. (2021). High density V-GAA transistor structure array based on self-aligned double patterning. 1–3. 1 indexed citations
7.
Bai, Weiping, N. Lu, & D. L. Kwong. (2005). Si interlayer passivation on germanium MOS capacitors with high-/spl kappa/ dielectric and metal gate. IEEE Electron Device Letters. 26(6). 378–380. 61 indexed citations
8.
Bai, Weiping, H.C. Wen, S. Mathew, et al.. (2004). Laminated metal gate electrode with tunable work function for advanced CMOS. 188–189. 13 indexed citations
10.
Wang, Xiaogang, J. Liu, Weiping Bai, & D. L. Kwong. (2004). A Novel MONOS-Type Nonvolatile Memory Using High-<tex>$kappa$</tex>Dielectrics for Improved Data Retention and Programming Speed. IEEE Transactions on Electron Devices. 51(4). 597–602. 82 indexed citations
11.
Lee, Jong Jin, Xuguang Wang, Weiping Bai, Nan Lü, & Dim-Lee Kwong. (2003). Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric. IEEE Transactions on Electron Devices. 50(10). 2067–2072. 89 indexed citations
12.
Luan, H.F., T.S. Jeon, Weiping Bai, et al.. (2002). Performance and reliability of ultra thin CVD HfO/sub 2/ gate dielectrics with dual poly-Si gate electrodes. 133–134. 31 indexed citations
13.
Luan, H.F., Weiping Bai, T.S. Jeon, et al.. (2002). High quality ultra thin CVD HfO/sub 2/ gate stack with poly-Si gate electrode. 31–34. 37 indexed citations
14.
Jeon, T.S., et al.. (2002). High quality CVD TaN gate electrode for sub-100 nm MOS devices. 30.5.1–30.5.4. 10 indexed citations
15.
Luan, H.F., et al.. (2002). High-k gate dielectrics for sub-100 nm CMOS technology. 1. 303–308. 4 indexed citations
16.
Wang, Yang, et al.. (2000). Scaling of vortex transport properties and nonlinear ac response of high-temperature superconductors. The European Physical Journal B. 15(2). 221–225. 5 indexed citations
17.
Bai, Weiping, et al.. (1999). Nonlinear I∼V characteristic and magnetic relaxation in high-T/sub c/ superconductors. IEEE Transactions on Applied Superconductivity. 9(2). 2647–2650. 2 indexed citations
18.
Bai, Weiping, et al.. (1998). Nonlinear Flux Diffusion and ac Susceptibility in High- T c Superconductors. Chinese Physics Letters. 15(9). 677–679. 5 indexed citations
19.
Li, Chuanyi, et al.. (1997). The materials equation and scaling law of flux pinning in high Tc superconductors. Applied Superconductivity. 5(1-6). 147–150. 6 indexed citations
20.
Chen, Kaixuan, Guoxing Lu, Lian Xue, et al.. (1997). Amplitude dependence of AC response in high Tc superconductors. Physica C Superconductivity. 282-287. 2381–2382. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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