H. Mitlehner

1.2k total citations · 1 hit paper
43 papers, 923 citations indexed

About

H. Mitlehner is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Mitlehner has authored 43 papers receiving a total of 923 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 6 papers in Mechanical Engineering and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Mitlehner's work include Silicon Carbide Semiconductor Technologies (37 papers), Electromagnetic Compatibility and Noise Suppression (14 papers) and Semiconductor materials and devices (12 papers). H. Mitlehner is often cited by papers focused on Silicon Carbide Semiconductor Technologies (37 papers), Electromagnetic Compatibility and Noise Suppression (14 papers) and Semiconductor materials and devices (12 papers). H. Mitlehner collaborates with scholars based in Germany, Canada and Italy. H. Mitlehner's co-authors include R. Helbig, M. Ruff, D. Stephani, Peter Friedrichs, Reinhold Schörner, Karl Otto Dohnke, Ulrich Weinert, Dethard Peters, Rudolf Elpelt and Tobias Erlbacher and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

H. Mitlehner

41 papers receiving 851 citations

Hit Papers

SiC devices: physics and numerical simulation 1994 2026 2004 2015 1994 100 200 300 400
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. SiC devices: physics and numerical simulation
    1994 408 citations H. Mitlehner et al. IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Mitlehner Germany 14 882 141 83 69 49 43 923
Martin Domeij Sweden 19 1.1k 1.3× 171 1.2× 90 1.1× 69 1.0× 62 1.3× 101 1.2k
C.H. Carter United States 8 588 0.7× 157 1.1× 106 1.3× 83 1.2× 70 1.4× 14 644
Takafumi Okuda Japan 14 723 0.8× 158 1.1× 67 0.8× 87 1.3× 30 0.6× 63 758
S.G. Sridhara Sweden 15 918 1.0× 227 1.6× 146 1.8× 131 1.9× 34 0.7× 25 963
A. Powell United Kingdom 13 549 0.6× 225 1.6× 117 1.4× 69 1.0× 38 0.8× 32 639
G. Augustine United States 12 629 0.7× 138 1.0× 104 1.3× 115 1.7× 86 1.8× 36 692
Calvin H. Carter China 16 621 0.7× 148 1.0× 96 1.2× 114 1.7× 79 1.6× 23 671
G. Landis United States 11 312 0.4× 120 0.9× 135 1.6× 72 1.0× 34 0.7× 18 365
K. Tone United States 14 478 0.5× 170 1.2× 96 1.2× 48 0.7× 45 0.9× 39 545
J. R. Flemish United States 15 472 0.5× 134 1.0× 146 1.8× 123 1.8× 62 1.3× 47 575

Countries citing papers authored by H. Mitlehner

Since Specialization
Citations

This map shows the geographic impact of H. Mitlehner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Mitlehner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Mitlehner more than expected).

Fields of papers citing papers by H. Mitlehner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Mitlehner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Mitlehner. The network helps show where H. Mitlehner may publish in the future.

Co-authorship network of co-authors of H. Mitlehner

This figure shows the co-authorship network connecting the top 25 collaborators of H. Mitlehner. A scholar is included among the top collaborators of H. Mitlehner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Mitlehner. H. Mitlehner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Matthus, Christian D., et al.. (2020). RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC. IEEE Transactions on Electron Devices. 67(8). 3278–3284. 24 indexed citations
2.
Krieger, M., et al.. (2019). On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements. Materials science forum. 963. 433–436. 1 indexed citations
3.
Mitlehner, H., et al.. (2019). Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits. Materials science forum. 963. 629–632. 7 indexed citations
4.
Krieger, M., et al.. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. Materials science forum. 924. 184–187. 14 indexed citations
5.
Mitlehner, H., et al.. (2016). Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET). Materials science forum. 858. 917–920. 1 indexed citations
6.
Erlbacher, Tobias, et al.. (2015). Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability. Materials science forum. 821-823. 806–809. 1 indexed citations
7.
Benedetto, Luigi Di, et al.. (2015). Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC. Materials science forum. 821-823. 656–659. 1 indexed citations
8.
Mitlehner, H., et al.. (2014). Experimental analysis of bipolar SiC-devices for future energy distribution systems. Fraunhofer-Publica (Fraunhofer-Gesellschaft). 1–10. 3 indexed citations
9.
Schlegl, Thomas, Benedikt Adelmann, H. Mitlehner, et al.. (2013). Alloying of Ohmic Contacts to n-Type 4H-SiC via Laser Irradiation. Materials science forum. 740-742. 773–776. 5 indexed citations
10.
Haeublein, Volker, et al.. (2013). Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC. Materials science forum. 740-742. 887–890.
11.
Peters, Dethard, et al.. (2003). Electrical performance of triple implanted vertical silicon carbide MOSFETs with low on-resistance. 103–106. 10 indexed citations
12.
Mitlehner, H., Jan-Peter Säck, & H.‐J. Schulze. (2003). High voltage thyristor for HVDC transmission and static VAr compensators. 934–939. 3 indexed citations
13.
Lorenz, K. & H. Mitlehner. (2003). Key power semiconductor device concepts for the next decade. Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344). 1. 564–569. 15 indexed citations
14.
Schörner, Reinhold, et al.. (2003). To Be ''Snappy'' or Not - a Comparison of the Transient Behaviours of Bipolar SiC-Diodes. Materials science forum. 433-436. 895–900. 3 indexed citations
15.
Peters, Dethard, et al.. (2002). Characterization of fast 4.5 kV SiC p-n diodes. 241–244. 8 indexed citations
16.
Friedrichs, Peter, et al.. (2001). Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC. Materials science forum. 353-356. 695–698. 5 indexed citations
17.
Peters, Dethard, Reinhold Schörner, Peter Friedrichs, et al.. (1999). An 1800 V triple implanted vertical 6H-SiC MOSFET. IEEE Transactions on Electron Devices. 46(3). 542–545. 40 indexed citations
18.
Planson, Dominique, et al.. (1997). Periphery protection for silicon carbide devices: state of the art and simulation. Materials Science and Engineering B. 46(1-3). 210–217. 16 indexed citations
19.
Kaufmann, U. & H. Mitlehner. (1979). Annealing behavior of neutron-transmutation doped silicon—As studied by EPR. Journal of Applied Physics. 50(5). 3258–3260. 3 indexed citations
20.
Mitlehner, H., et al.. (1971). Far infrared and Raman investigation of Zn2+ doped MnF2 in the two-magnon region. Solid State Communications. 9(23). 2059–2063. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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