B. Ya. Ber

994 total citations
102 papers, 669 citations indexed

About

B. Ya. Ber is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. Ya. Ber has authored 102 papers receiving a total of 669 indexed citations (citations by other indexed papers that have themselves been cited), including 67 papers in Electrical and Electronic Engineering, 45 papers in Atomic and Molecular Physics, and Optics and 36 papers in Materials Chemistry. Recurrent topics in B. Ya. Ber's work include Semiconductor Quantum Structures and Devices (37 papers), GaN-based semiconductor devices and materials (33 papers) and Semiconductor materials and devices (25 papers). B. Ya. Ber is often cited by papers focused on Semiconductor Quantum Structures and Devices (37 papers), GaN-based semiconductor devices and materials (33 papers) and Semiconductor materials and devices (25 papers). B. Ya. Ber collaborates with scholars based in Russia, United Kingdom and Germany. B. Ya. Ber's co-authors include Yu. Kudriavtsev, C. T. Foxon, С. В. Новиков, John Orton, P. N. Brunkov, A. B. Smirnov, A. E. Aleksenskii, T.S. Cheng, G.J. Adriaenssens and Konstantin Iakoubovskii and has published in prestigious journals such as Journal of Applied Physics, Scientific Reports and Chemical Geology.

In The Last Decade

B. Ya. Ber

88 papers receiving 640 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Ya. Ber Russia 14 326 282 229 228 148 102 669
P. Specht United States 18 515 1.6× 390 1.4× 568 2.5× 269 1.2× 135 0.9× 61 975
R. Cadoret France 18 451 1.4× 331 1.2× 323 1.4× 238 1.0× 112 0.8× 57 763
V. N. Brudnyı̆ Russia 13 522 1.6× 313 1.1× 315 1.4× 119 0.5× 122 0.8× 100 715
M. Sanati United States 17 403 1.2× 632 2.2× 335 1.5× 193 0.8× 94 0.6× 55 1.0k
Martin Letz Germany 14 211 0.6× 417 1.5× 99 0.4× 69 0.3× 145 1.0× 71 654
H. A. van der Vegt Netherlands 12 280 0.9× 323 1.1× 758 3.3× 188 0.8× 106 0.7× 15 1.0k
M. F. Ravet France 14 229 0.7× 181 0.6× 202 0.9× 84 0.4× 87 0.6× 28 546
T.J. Bullough United Kingdom 16 399 1.2× 234 0.8× 405 1.8× 180 0.8× 45 0.3× 66 677
Takeshi Inaoka Japan 17 318 1.0× 373 1.3× 447 2.0× 186 0.8× 95 0.6× 83 855
S. Pecker Israel 10 188 0.6× 534 1.9× 240 1.0× 161 0.7× 354 2.4× 14 827

Countries citing papers authored by B. Ya. Ber

Since Specialization
Citations

This map shows the geographic impact of B. Ya. Ber's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Ya. Ber with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Ya. Ber more than expected).

Fields of papers citing papers by B. Ya. Ber

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Ya. Ber. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Ya. Ber. The network helps show where B. Ya. Ber may publish in the future.

Co-authorship network of co-authors of B. Ya. Ber

This figure shows the co-authorship network connecting the top 25 collaborators of B. Ya. Ber. A scholar is included among the top collaborators of B. Ya. Ber based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Ya. Ber. B. Ya. Ber is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kaminsky, Felix V., et al.. (2025). Halogens (F, Cl) in Natural Diamond: SIMS Study. Geochemistry International. 63(10). 861–871.
2.
Kaminsky, Felix V., et al.. (2024). Hydrogen in natural diamond: Quantification of N3VH defects using SIMS and FTIR data. Chemical Geology. 661. 122185–122185. 2 indexed citations
3.
Ber, B. Ya., et al.. (2024). Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition. Vacuum. 227. 113372–113372. 1 indexed citations
4.
Хвостикова, О. А., et al.. (2024). Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt. Scientific Reports. 14(1). 1334–1334. 1 indexed citations
5.
Burakov, Boris E., et al.. (2023). Self-glowing single crystal diamond activated with carbon-14: First synthesis and characterization. Diamond and Related Materials. 141. 110650–110650. 1 indexed citations
6.
Gladyshev, A. G., A. V. Babichev, I. I. Novikov, et al.. (2021). Investigation of the zinc diffusion process into epitaxial layers of indium phosphide and indium-gallium arsenide grown by molecular beam epitaxy. Journal of Optical Technology. 88(12). 742–742.
7.
Малин, Т. В., et al.. (2020). Donor-acceptor nature of orange photoluminescence in AlN. Semiconductor Science and Technology. 35(12). 125006–125006. 3 indexed citations
8.
Levin, R. V., et al.. (2020). Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD. Technical Physics Letters. 46(10). 961–963. 2 indexed citations
9.
Levin, R. V., et al.. (2018). A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy. Technical Physics Letters. 44(12). 1127–1129. 3 indexed citations
10.
Ber, B. Ya., Petr Bábor, P. N. Brunkov, et al.. (2013). Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques. Thin Solid Films. 540. 96–105. 24 indexed citations
11.
Mamutin, V. V., et al.. (2011). Molecular-beam epitaxy growth and characterization of 5-μm quantum cascade laser. Journal of Physics Conference Series. 291. 12008–12008. 1 indexed citations
12.
Ber, B. Ya., et al.. (2010). Mass transfer in thermo-electric-field modification of glass-metal nanocomposites. Technical Physics. 55(11). 1600–1608. 9 indexed citations
13.
Гусев, В. К., V.Kh. Alimov, Ievgen I. Arkhipov, et al.. (2009). In-vessel surface layer evolution during plasma–wall interaction in the Globus-M spherical tokamak. Nuclear Fusion. 49(9). 95022–95022. 3 indexed citations
14.
Godisov, O. N., et al.. (2002). Separation of Silicon Isotopes by Silicon Tetrafluoride–Silane Technology. Inorganic Materials. 38(6). 539–541. 3 indexed citations
15.
Godisov, O. N., B. Ya. Ber, V. Yu. Davydov, et al.. (2002). Isotope-pure silicon layers grown by MBE. Semiconductors. 36(12). 1400–1402. 1 indexed citations
16.
Foxon, C. T., T.S. Cheng, John Orton, et al.. (1998). Studies of p-GaN grown by MBE on GaAs(1 1 1)B. Journal of Crystal Growth. 189-190. 516–518. 4 indexed citations
17.
Ber, B. Ya., A. Merkulov, С. В. Новиков, et al.. (1996). Implantation of As in GaN epitaxial layers during molecular-beam epitaxy. Semiconductors. 30(3). 293–296. 1 indexed citations
18.
Ber, B. Ya., et al.. (1995). Investigation of the parameters of GaAs and Al x Ga 1 - x As grown by liquid-phase epitaxy with ultrafast cooling of the melt. Technical Physics Letters. 21(2). 103–105. 1 indexed citations
19.
Shapira, Yoram, et al.. (1994). Effect of deposition parameters on the properties of In2O3/InP junctions. Journal of Applied Physics. 75(4). 2264–2269. 19 indexed citations
20.
Ber, B. Ya., et al.. (1993). Redistribution of aluminum in GaAs/AlGaAs quantum-well structures irradiated by protons. Technical Physics Letters. 19(12). 762–763. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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