N. B. Strokan

863 total citations
82 papers, 590 citations indexed

About

N. B. Strokan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Nuclear and High Energy Physics. According to data from OpenAlex, N. B. Strokan has authored 82 papers receiving a total of 590 indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 21 papers in Nuclear and High Energy Physics. Recurrent topics in N. B. Strokan's work include Silicon Carbide Semiconductor Technologies (41 papers), Silicon and Solar Cell Technologies (31 papers) and Particle Detector Development and Performance (21 papers). N. B. Strokan is often cited by papers focused on Silicon Carbide Semiconductor Technologies (41 papers), Silicon and Solar Cell Technologies (31 papers) and Particle Detector Development and Performance (21 papers). N. B. Strokan collaborates with scholars based in Russia, Sweden and Uzbekistan. N. B. Strokan's co-authors include E. Verbitskaya, V. Eremin, А. В. Иванов, A. А. Lebedev, A. A. Lebedev, E. V. Kalinina, V. V. Kozlovski, N.S. Savkina, G. A. Oganesyan and Anatoly M. Strel’chuk and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

N. B. Strokan

79 papers receiving 557 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
N. B. Strokan Russia	13	514	184	137	121	69	82	590
G. Lindstroem Germany	12	361 0.7×	232 1.3×	64 0.5×	138 1.1×	52 0.8×	25	422
Nick MacDonald United States	12	126 0.2×	164 0.9×	167 1.2×	82 0.7×	52 0.8×	26	439
M. Grisham United States	9	129 0.3×	99 0.5×	138 1.0×	91 0.8×	43 0.6×	15	324
S. Kilpatrick United States	13	248 0.5×	210 1.1×	70 0.5×	36 0.3×	325 4.7×	39	537
Hyuk Jin South Korea	9	215 0.4×	268 1.5×	219 1.6×	46 0.4×	40 0.6×	25	470
S. Lazanu Romania	13	392 0.8×	96 0.5×	88 0.6×	32 0.3×	173 2.5×	61	448
E. Mahner Switzerland	11	160 0.3×	58 0.3×	84 0.6×	48 0.4×	84 1.2×	39	292
G. Stengl Austria	13	251 0.5×	56 0.3×	112 0.8×	110 0.9×	45 0.7×	56	443
R. Sobierajski Poland	12	140 0.3×	85 0.5×	74 0.5×	202 1.7×	92 1.3×	37	383
M. Schürmann Germany	11	198 0.4×	61 0.3×	82 0.6×	29 0.2×	110 1.6×	40	364

Countries citing papers authored by N. B. Strokan

Since Specialization

Citations

This map shows the geographic impact of N. B. Strokan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. B. Strokan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. B. Strokan more than expected).

Fields of papers citing papers by N. B. Strokan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. B. Strokan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. B. Strokan. The network helps show where N. B. Strokan may publish in the future.

Co-authorship network of co-authors of N. B. Strokan

This figure shows the co-authorship network connecting the top 25 collaborators of N. B. Strokan. A scholar is included among the top collaborators of N. B. Strokan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. B. Strokan. N. B. Strokan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Emtsev, V. V., V. V. Kozlovski, A. А. Lebedev, et al.. (2012). Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type. Semiconductors. 46(4). 456–465. 30 indexed citations

Strokan, N. B., et al.. (2009). 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C. Materials science forum. 615-617. 849–852. 4 indexed citations

Emtsev, V. V., et al.. (2009). Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation. Physica B Condensed Matter. 404(23-24). 4752–4754. 13 indexed citations

Strokan, N. B., et al.. (2007). 4H-SiC High Temperature Spectrometers. Materials science forum. 556-557. 941–944. 3 indexed citations

Иванов, А. В., A. A. Lebedev, & N. B. Strokan. (2006). Carrier transport in a SiC detector subjected to extreme radiation doses. Semiconductors. 40(7). 864–867. 4 indexed citations

Strokan, N. B., et al.. (2005). Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation. Materials science forum. 483-485. 1025–1028. 4 indexed citations

Strokan, N. B.. (2005). The Limiting Energy Resolution of SiC Detectors in Ion Spectrometry. Semiconductors. 39(12). 1420–1420. 6 indexed citations

Iwanczyk, Jan S., Bradley E. Patt, V. Eremin, et al.. (2003). New high sensitivity silicon photodetectors for medical imaging applications. IEEE Transactions on Nuclear Science. 50(4). 1225–1228. 4 indexed citations

Lebedev, A. А., V. V. Kozlovski, N. B. Strokan, et al.. (2002). Radiation hardness of wide-gap semiconductors (using the example of silicon carbide). Semiconductors. 36(11). 1270–1275. 33 indexed citations

10.

Strokan, N. B., et al.. (2002). N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors. Materials science forum. 389-393. 1439–1444. 1 indexed citations

11.

Strokan, N. B., et al.. (2000). The investigation of noise in hard radiation detectors by pulse-amplitude analysis. Technical Physics. 45(2). 281–284. 1 indexed citations

12.

Strokan, N. B., et al.. (1998). Properties of p +-n structures with a buried layer of radiation-induced defects. Semiconductors. 32(3). 325–331. 5 indexed citations

13.

Eremin, V., et al.. (1996). Development of transient current and charge techniques for the measurement of effective net concentration of ionized charges (Neff) in the space charge region of p-n junction detectors. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 372(3). 388–398. 135 indexed citations

14.

Verbitskaya, E., V. Eremin, N. B. Strokan, et al.. (1994). Physical aspects of precise spectrometry of α-particles with silicon pn-junction detectors. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 84(1). 51–61. 7 indexed citations

15.

Verbitskaya, E., et al.. (1993). Characteristic features of the generation current in α-irradiated p + -n junctions made from high-resistivity silicon. Semiconductors. 27(2). 115–119. 3 indexed citations

16.

Verbitskaya, E., A. M. Malyarenko, N. B. Strokan, et al.. (1993). Precision semiconductor spectrometry of ions. Semiconductors. 27(11). 1127–1136. 2 indexed citations

17.

Лебедев, В. М., et al.. (1993). Quantitative analysis of the depth distribution of oxygen by the use of nuclear reactions with deuterons. Technical Physics. 38(9). 821–825. 1 indexed citations

18.

Strokan, N. B., et al.. (1985). Lineshape and resolution of radiation detectors in current pulse spectrometry. 30. 1130–1135. 1 indexed citations

19.

Ryvkin, S.M., et al.. (1966). A Gamma-Ray Spectrometry Counter Based on Germanium with Radiation Defects. Soviet physics. Doklady. 10. 1116. 1 indexed citations

20.

Ryvkin, S.M., et al.. (1965). SPECTROMETRIC GAMMA-QUANTUM COUNTER BASED ON GERMANIUM WITH RADIATION DEFECTS.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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