H. Bleichner

754 total citations
34 papers, 606 citations indexed

About

H. Bleichner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, H. Bleichner has authored 34 papers receiving a total of 606 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 3 papers in Mechanical Engineering. Recurrent topics in H. Bleichner's work include Silicon Carbide Semiconductor Technologies (20 papers), Semiconductor materials and devices (17 papers) and Silicon and Solar Cell Technologies (12 papers). H. Bleichner is often cited by papers focused on Silicon Carbide Semiconductor Technologies (20 papers), Semiconductor materials and devices (17 papers) and Silicon and Solar Cell Technologies (12 papers). H. Bleichner collaborates with scholars based in Sweden, Czechia and Switzerland. H. Bleichner's co-authors include C. Hallin, H. Lendenmann, Fanny Dahlquist, Per Jönsson, Peder Bergman, Andrey O. Konstantinov, Jan Linnros, Augustinas Galeckas, S. Berg and Martin S. Janson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Power Electronics.

In The Last Decade

H. Bleichner

32 papers receiving 569 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Bleichner Sweden 14 586 176 71 49 34 34 606
Anatoly M. Strel’chuk Russia 14 672 1.1× 244 1.4× 103 1.5× 54 1.1× 42 1.2× 95 712
N.S. Savkina Russia 13 502 0.9× 175 1.0× 92 1.3× 50 1.0× 57 1.7× 76 538
H. Mitlehner Germany 14 882 1.5× 141 0.8× 83 1.2× 69 1.4× 29 0.9× 43 923
V. V. Kozlovski Russia 12 508 0.9× 209 1.2× 71 1.0× 27 0.6× 24 0.7× 56 548
K. Tone United States 14 478 0.8× 170 1.0× 96 1.4× 48 1.0× 15 0.4× 39 545
P. E. R. Nordquist United States 7 261 0.4× 130 0.7× 67 0.9× 37 0.8× 18 0.5× 21 301
Véronique Soulière France 11 312 0.5× 153 0.9× 122 1.7× 68 1.4× 25 0.7× 74 388
T. Dalibor Germany 9 665 1.1× 231 1.3× 57 0.8× 88 1.8× 31 0.9× 17 679
M. K. Linnarsson Sweden 10 341 0.6× 115 0.7× 73 1.0× 49 1.0× 41 1.2× 17 408
Mitsuhiro Shigeta Japan 10 384 0.7× 204 1.2× 97 1.4× 70 1.4× 32 0.9× 28 460

Countries citing papers authored by H. Bleichner

Since Specialization
Citations

This map shows the geographic impact of H. Bleichner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Bleichner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Bleichner more than expected).

Fields of papers citing papers by H. Bleichner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Bleichner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Bleichner. The network helps show where H. Bleichner may publish in the future.

Co-authorship network of co-authors of H. Bleichner

This figure shows the co-authorship network connecting the top 25 collaborators of H. Bleichner. A scholar is included among the top collaborators of H. Bleichner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Bleichner. H. Bleichner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Asplund, C., et al.. (2007). Recent advances of QWIP development in Sweden. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6542. 65420V–65420V. 5 indexed citations
2.
3.
Bleichner, H., et al.. (2003). The influence of gate-metallization potential drop on transient GTO characteristics. 13. 614–617. 1 indexed citations
4.
Lendenmann, H., et al.. (2002). 4.5 kV 4H-SiC diodes with ideal forward characteristic. 31–34. 22 indexed citations
5.
Linnarsson, Margareta K., Per O. Å. Persson, H. Bleichner, et al.. (2001). Precipitate Formation in Heavily Al-Doped 4H-SiC Layers. Materials science forum. 353-356. 583–586. 3 indexed citations
6.
Galeckas, Augustinas, et al.. (2001). Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes. Journal of Applied Physics. 90(2). 980–984. 38 indexed citations
7.
Linnarsson, M. K., Martin S. Janson, U. Zimmermann, et al.. (2001). Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material. Applied Physics Letters. 79(13). 2016–2018. 42 indexed citations
8.
Galeckas, Augustinas, et al.. (2001). Investigation of Electroluminescence across 4H-SiC p<sup>+</sup>/n<sup>-</sup>/n<sup>+</sup> Structures Using Optical Emission Microscopy. Materials science forum. 353-356. 389–392. 11 indexed citations
9.
Janson, Martin S., M. K. Linnarsson, Anders Hallén, et al.. (2000). Transient enhanced diffusion of implanted boron in 4H-silicon carbide. Applied Physics Letters. 76(11). 1434–1436. 39 indexed citations
10.
Konstantinov, Andrey O. & H. Bleichner. (1997). Bright-line defect formation in silicon carbide injection diodes. Applied Physics Letters. 71(25). 3700–3702. 45 indexed citations
11.
Galeckas, Augustinas, V. Grivickas, Jan Linnros, H. Bleichner, & C. Hallin. (1997). Free carrier absorption and lifetime mapping in 4H SiC epilayers. Journal of Applied Physics. 81(8). 3522–3525. 20 indexed citations
12.
Bleichner, H., et al.. (1996). Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiated n-type silicon. Journal of Applied Physics. 79(12). 9142–9148. 43 indexed citations
13.
Bleichner, H., et al.. (1994). The ambipolar diffusion coefficient in silicon: Dependence on excess-carrier concentration and temperature. Journal of Applied Physics. 76(5). 2855–2859. 54 indexed citations
14.
Bleichner, H., et al.. (1992). A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements. Solid-State Electronics. 35(11). 1683–1695. 22 indexed citations
15.
Bleichner, H., et al.. (1992). A novel technique for the simultaneous measurement of ambipolar carrier lifetime and diffusion coefficient in silicon. Solid-State Electronics. 35(9). 1223–1227. 25 indexed citations
16.
Bleichner, H., et al.. (1991). A position-sensitive method for the determination of high-level carrier lifetimes in power devices. 59–64.
17.
Lundqvist, Maria, et al.. (1991). An optical system for bilateral recombination-radiation diagnostics of the carrier redistribution in switching power devices. IEEE Transactions on Instrumentation and Measurement. 40(6). 956–961. 8 indexed citations
18.
Bleichner, H., et al.. (1990). A time-resolved optical system for spatial characterization of the carrier distribution in a gate turn-off thyristor (GTO). IEEE Transactions on Instrumentation and Measurement. 39(3). 473–478. 20 indexed citations
19.
Vobecký, J., et al.. (1990). Multi-cathode influences on the internal excess-carrier distribution during the GTO turn-off process. 1 indexed citations
20.
Tirén, J, et al.. (1989). An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate. Solid-State Electronics. 32(11). 993–996. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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