G. A. Oganesyan

611 total citations
101 papers, 474 citations indexed

About

G. A. Oganesyan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. A. Oganesyan has authored 101 papers receiving a total of 474 indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 38 papers in Atomic and Molecular Physics, and Optics and 23 papers in Materials Chemistry. Recurrent topics in G. A. Oganesyan's work include Silicon and Solar Cell Technologies (49 papers), Semiconductor materials and interfaces (34 papers) and Silicon Nanostructures and Photoluminescence (19 papers). G. A. Oganesyan is often cited by papers focused on Silicon and Solar Cell Technologies (49 papers), Semiconductor materials and interfaces (34 papers) and Silicon Nanostructures and Photoluminescence (19 papers). G. A. Oganesyan collaborates with scholars based in Russia, Germany and Greece. G. A. Oganesyan's co-authors include V. V. Emtsev, A. А. Lebedev, D. S. Poloskin, V. V. Emtsev, V. V. Kozlovski, C. A. Londos, R. Krause‐Rehberg, Mohamed Elsayed, N. B. Strokan and H. Ohyama and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Acta Materialia.

In The Last Decade

G. A. Oganesyan

89 papers receiving 455 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. A. Oganesyan Russia	13	351	146	126	57	55	101	474
Jean-François Michaud France	15	601 1.7×	183 1.3×	135 1.1×	84 1.5×	52 0.9×	72	724
М. Л. Занавескин Russia	10	173 0.5×	59 0.4×	148 1.2×	70 1.2×	59 1.1×	50	336
О. Д. Храмова Russia	11	190 0.5×	89 0.6×	215 1.7×	87 1.5×	45 0.8×	60	357
O. A. Novodvorsky Russia	11	218 0.6×	86 0.6×	224 1.8×	90 1.6×	38 0.7×	66	381
S. J. Uftring United States	12	190 0.5×	126 0.9×	75 0.6×	68 1.2×	11 0.2×	18	417
Maruf Hossain Germany	15	418 1.2×	97 0.7×	87 0.7×	14 0.2×	32 0.6×	76	551
Fumiyoshi Takano Japan	13	487 1.4×	142 1.0×	272 2.2×	98 1.7×	19 0.3×	39	654
I. Kasko Germany	10	283 0.8×	65 0.4×	158 1.3×	45 0.8×	20 0.4×	31	356
Benjamin Lemke Germany	9	219 0.6×	207 1.4×	91 0.7×	50 0.9×	10 0.2×	25	353

Countries citing papers authored by G. A. Oganesyan

Since Specialization

Citations

This map shows the geographic impact of G. A. Oganesyan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. A. Oganesyan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. A. Oganesyan more than expected).

Fields of papers citing papers by G. A. Oganesyan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. A. Oganesyan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. A. Oganesyan. The network helps show where G. A. Oganesyan may publish in the future.

Co-authorship network of co-authors of G. A. Oganesyan

This figure shows the co-authorship network connecting the top 25 collaborators of G. A. Oganesyan. A scholar is included among the top collaborators of G. A. Oganesyan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. A. Oganesyan. G. A. Oganesyan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Emtsev, V. V., et al.. (2024). Bismuth-related defects in n-type silicon irradiated with protons: A comparison to similar defects formed under electron irradiation. Journal of Applied Physics. 136(10).

Lebedev, A. А., et al.. (2023). Effect of proton irradiation on the properties of high-voltage integrated 4H-SiC Schottky diodes at operating temperatures. Физика и техника полупроводников. 57(1). 49–49. 1 indexed citations

Lebedev, A. А., V. Yu. Davydov, С. П. Лебедев, et al.. (2023). Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method. Semiconductors. 57(2). 121–124. 1 indexed citations

Emtsev, V. V., et al.. (2022). Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects. Journal of Applied Physics. 131(12). 2 indexed citations

Krause‐Rehberg, R., et al.. (2021). Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons. Journal of Physics Condensed Matter. 33(24). 245702–245702. 1 indexed citations

Emtsev, V. V., et al.. (2017). Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 14(7). 2 indexed citations

Oganesyan, G. A., et al.. (2014). THE MODERN APPROACH OF CHILDREN’S TREATMENT WITH VELOPHARYNGEAL INSUFFICIENCY IN THE POSTOPERATIVE PERIOD. Вопросы современной педиатрии. 13(5). 104–104.

Belyaev, V. V., et al.. (2010). Methods of nonlinear dynamics in estimation of electroencephalograms of healthy people and of patients with epilepsy. Journal of Evolutionary Biochemistry and Physiology. 46(5). 501–510. 1 indexed citations

Oganesyan, G. A., et al.. (2010). Effects of Memantine on Convulsive Reactions and the Organization of Sleep in Krushinskii–Molodkina Rats with an Inherited Predisposition to Audiogenic Convulsions. Neuroscience and Behavioral Physiology. 40(8). 913–919. 11 indexed citations

10.

Emtsev, V. V., et al.. (2009). Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation. Physica B Condensed Matter. 404(23-24). 4752–4754. 13 indexed citations

11.

Bagraev, N. T., et al.. (2009). Quantum supercurrent and Andreev reflection in silicon nanostructures. Semiconductors. 43(11). 1455–1465. 4 indexed citations

12.

Kozub, V. I., et al.. (2009). Metal-insulator transition in n-3C-SiC epitaxial films. Journal of Applied Physics. 105(2). 4 indexed citations

13.

Oganesyan, G. A., et al.. (2005). Effects of total sleep deprivation in rats with hereditary predisposition to audiogenic convulsions. Journal of Evolutionary Biochemistry and Physiology. 41(1). 103–111. 1 indexed citations

14.

Emtsev, V. V., et al.. (2003). Photoluminescence characterization of thermal defects in Czochralski grown silicon heat treated at 600°C. Physica B Condensed Matter. 340-342. 1018–1021. 1 indexed citations

15.

Emtsev, V. V., B. A. Andreev, V. Yu. Davydov, et al.. (2003). Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon. Physica B Condensed Matter. 340-342. 769–772. 7 indexed citations

16.

Chernigovskaya, E. V., et al.. (2003). Regulation of Apoptosis in Nonapeptidergic Neurons of Rat Hypothalamus by Catecholamines in Experiments in vitro. Journal of Evolutionary Biochemistry and Physiology. 39(6). 732–738. 1 indexed citations

17.

Ammerlaan, C.A.J., V. V. Emtsev, V. V. Emtsev, et al.. (2002). Double thermal donors in Czochralski‐grown silicon heat‐treated under atmospheric and high hydrostatic pressures. physica status solidi (b). 235(1). 75–78. 22 indexed citations

18.

Spaeth, J.‐M., et al.. (1994). On the nature and structures of different heat treatment centres in n- and p-type silicon. Semiconductor Science and Technology. 9(7). 1346–1353. 3 indexed citations

19.

Andreev, B. A., В. Г. Голубев, V. V. Emtsev, et al.. (1993). Formation of ``new'' donors as a result of heat treatment of silicon with different oxygen concentrations. Semiconductors. 27(4). 315–323. 1 indexed citations

20.

Emtsev, V. V., et al.. (1993). ``New donors'' in annealed silicon with an isoelectronic germanium impurity. Semiconductors. 27(11). 1111–1112. 1 indexed citations

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