M. K. Linnarsson

490 total citations
17 papers, 408 citations indexed

About

M. K. Linnarsson is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Materials Chemistry. According to data from OpenAlex, M. K. Linnarsson has authored 17 papers receiving a total of 408 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 6 papers in Computational Mechanics and 4 papers in Materials Chemistry. Recurrent topics in M. K. Linnarsson's work include Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor materials and devices (9 papers) and Ion-surface interactions and analysis (6 papers). M. K. Linnarsson is often cited by papers focused on Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor materials and devices (9 papers) and Ion-surface interactions and analysis (6 papers). M. K. Linnarsson collaborates with scholars based in Sweden, Norway and Australia. M. K. Linnarsson's co-authors include B. G. Svensson, Anders Hallén, Giovanni Alfieri, Martin S. Janson, Edouard V. Monakhov, J. Wong‐Leung, Johan Åström, Daniel Primetzhofer, Sébastien Legendre and H. Bleichner and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

M. K. Linnarsson

16 papers receiving 400 citations

Peers

M. K. Linnarsson

EEE

AMPO

CMP

R. Gröetzschel Germany

G. Galvagno Italy

P. E. R. Nordquist United States

M. S. Ameen United States

W. M. van de Wijgert Netherlands

V. V. Kozlovski Russia

M. F. da Silva Portugal

H. Bleichner Sweden

Tomio Izumi Japan

C. Laviron France

R. Gröetzschel Germany

M. K. Linnarsson

200 ×0.6

EEE

151 ×1.3

AMPO

149 ×2.0

97 ×1.4

38 ×0.8

CMP

Citations per year, relative to M. K. Linnarsson M. K. Linnarsson (= 1×) peers R. Gröetzschel

Countries citing papers authored by M. K. Linnarsson

Since Specialization

Citations

This map shows the geographic impact of M. K. Linnarsson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. K. Linnarsson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. K. Linnarsson more than expected).

Fields of papers citing papers by M. K. Linnarsson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. K. Linnarsson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. K. Linnarsson. The network helps show where M. K. Linnarsson may publish in the future.

Co-authorship network of co-authors of M. K. Linnarsson

This figure shows the co-authorship network connecting the top 25 collaborators of M. K. Linnarsson. A scholar is included among the top collaborators of M. K. Linnarsson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. K. Linnarsson. M. K. Linnarsson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

Linnarsson, M. K., et al.. (2012). New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector. Review of Scientific Instruments. 83(9). 95107–95107. 60 indexed citations

Hansson, G. V., et al.. (2008). Influence of Er and O concentrations on the microstructure and luminescence of Si:Er/O LEDs. Journal of Physics Conference Series. 100(4). 42010–42010. 2 indexed citations

Wong‐Leung, J., Martin S. Janson, Andrej Kuznetsov, et al.. (2007). Ion implantation in 4H–SiC. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 266(8). 1367–1372. 18 indexed citations

Pinos, Andrea, et al.. (2007). Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire. Journal of Electronic Materials. 36(12). 1621–1624. 42 indexed citations

Linnarsson, M. K., Martin S. Janson, N. Nordell, J. Wong‐Leung, & Adolf Schöner. (2006). Formation of precipitates in heavily boron doped 4H-SiC. Applied Surface Science. 252(15). 5316–5320. 11 indexed citations

Monakhov, Edouard V., B. G. Svensson, M. K. Linnarsson, et al.. (2005). Excimer laser annealing of B and BF2 implanted Si. Materials Science and Engineering B. 124-125. 232–234. 2 indexed citations

Monakhov, E. V., B. G. Svensson, M. K. Linnarsson, et al.. (2005). Enhanced boron diffusion in excimer laser preannealed Si. Applied Physics Letters. 86(15). 8 indexed citations

Alfieri, Giovanni, Edouard V. Monakhov, B. G. Svensson, & M. K. Linnarsson. (2005). Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide. Journal of Applied Physics. 98(4). 106 indexed citations

Janson, Martin S., M. K. Linnarsson, B. G. Svensson, et al.. (2004). Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide. Physica Scripta. 99–99. 5 indexed citations

10.

Monakhov, E. V., B. G. Svensson, M. K. Linnarsson, et al.. (2004). Excimer laser annealing of shallow As and B doped layers. Materials Science and Engineering B. 114-115. 352–357. 3 indexed citations

11.

Janson, Martin S., M. K. Linnarsson, Anders Hallén, & B. G. Svensson. (2003). Ion implantation range distributions in silicon carbide. Journal of Applied Physics. 93(11). 8903–8909. 35 indexed citations

12.

Linnarsson, M. K., U. Zimmermann, J. Wong‐Leung, et al.. (2002). Solubility limits of dopants in 4H–SiC. Applied Surface Science. 203-204. 427–432. 19 indexed citations

13.

Linnarsson, M. K., Martin S. Janson, U. Zimmermann, et al.. (2001). Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material. Applied Physics Letters. 79(13). 2016–2018. 42 indexed citations

14.

Janson, Martin S., Anders Hallén, M. K. Linnarsson, & B. G. Svensson. (2001). Hydrogen–boron complex formation and dissociation in 4H–silicon carbide. Applied Surface Science. 184(1-4). 257–262. 2 indexed citations

15.

Janson, Martin S., M. K. Linnarsson, Anders Hallén, et al.. (2000). Transient enhanced diffusion of implanted boron in 4H-silicon carbide. Applied Physics Letters. 76(11). 1434–1436. 39 indexed citations

16.

Hallberg, Tomas, et al.. (1998). Ultra-Shallow Thermal Donor Formation in Oxygen-Containing Ambient. physica status solidi (b). 210(2). 527–532.

17.

Linnarsson, M. K., J. P. Doyle, & B. G. Svensson. (1996). Diffusion of Hydrogen in 6H Silicon Carbide. MRS Proceedings. 423. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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