Д. В. Гусейнов

1.2k total citations
52 papers, 855 citations indexed

About

Д. В. Гусейнов is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Cognitive Neuroscience. According to data from OpenAlex, Д. В. Гусейнов has authored 52 papers receiving a total of 855 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 14 papers in Cognitive Neuroscience. Recurrent topics in Д. В. Гусейнов's work include Advanced Memory and Neural Computing (18 papers), Semiconductor materials and interfaces (16 papers) and Neural dynamics and brain function (14 papers). Д. В. Гусейнов is often cited by papers focused on Advanced Memory and Neural Computing (18 papers), Semiconductor materials and interfaces (16 papers) and Neural dynamics and brain function (14 papers). Д. В. Гусейнов collaborates with scholars based in Russia, Germany and Italy. Д. В. Гусейнов's co-authors include Alexey Mikhaylov, A. I. Belov, Bernardo Spagnolo, Д. С. Королев, N. V. Agudov, A. A. Dubkov, Victor Kazantsev, Angelo Carollo, Svetlana A. Gerasimova and A. V. Krichigin and has published in prestigious journals such as Sensors, RSC Advances and Journal of Physics D Applied Physics.

In The Last Decade

Д. В. Гусейнов

50 papers receiving 822 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Д. В. Гусейнов Russia	14	561	263	236	222	105	52	855
О. Н. Горшков Russia	17	795 1.4×	355 1.3×	223 0.9×	185 0.8×	221 2.1×	103	1.0k
И. Н. Антонов Russia	16	697 1.2×	355 1.3×	188 0.8×	127 0.6×	127 1.2×	90	856
Yu. V. Pershin United States	9	507 0.9×	201 0.8×	113 0.5×	99 0.4×	55 0.5×	15	608
Д. О. Филатов Russia	10	435 0.8×	145 0.6×	112 0.5×	147 0.7×	159 1.5×	105	674
M. N. Koryazhkina Russia	12	503 0.9×	277 1.1×	183 0.8×	152 0.7×	39 0.4×	34	633
K. E. Nikiruy Russia	13	507 0.9×	304 1.2×	171 0.7×	53 0.2×	65 0.6×	23	610
Xiaobin Wang China	12	426 0.8×	120 0.5×	58 0.2×	46 0.2×	57 0.5×	25	575
Ziwen Wang China	13	772 1.4×	265 1.0×	192 0.8×	39 0.2×	137 1.3×	42	965
Kurtis D. Cantley United States	11	431 0.8×	170 0.6×	120 0.5×	74 0.3×	78 0.7×	35	533
L. J. Deng China	15	605 1.1×	282 1.1×	133 0.6×	23 0.1×	123 1.2×	35	919

Countries citing papers authored by Д. В. Гусейнов

Since Specialization

Citations

This map shows the geographic impact of Д. В. Гусейнов's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Д. В. Гусейнов with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Д. В. Гусейнов more than expected).

Fields of papers citing papers by Д. В. Гусейнов

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Д. В. Гусейнов. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Д. В. Гусейнов. The network helps show where Д. В. Гусейнов may publish in the future.

Co-authorship network of co-authors of Д. В. Гусейнов

This figure shows the co-authorship network connecting the top 25 collaborators of Д. В. Гусейнов. A scholar is included among the top collaborators of Д. В. Гусейнов based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Д. В. Гусейнов. Д. В. Гусейнов is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Gerasimova, Svetlana A., A. I. Belov, Д. В. Гусейнов, et al.. (2024). Memristor-based model of neuronal excitability and synaptic potentiation. Frontiers in Neuroscience. 18. 1456386–1456386. 2 indexed citations

Гусейнов, Д. В., et al.. (2024). Synthesis, some Physicochemical and Biomedical Properties of colored Apatite‐Structured Compounds with Mn ⁵⁺ and Cr ⁵⁺. ChemistrySelect. 9(11). 1 indexed citations

Gerasimova, Svetlana A., et al.. (2023). Mathematical and Experimental Model of Neuronal Oscillator Based on Memristor-Based Nonlinearity. Mathematics. 11(5). 1268–1268. 6 indexed citations

Гусейнов, Д. В., et al.. (2023). Impact of spin-flip scattering on spin current and inverse Spin-Hall effect in silicon doped by bismuth, antimony or phosphorus. Physica B Condensed Matter. 674. 415551–415551.

Королев, Д. С., et al.. (2022). Inverted spike-rate-dependent plasticity due to charge traps in a metal-oxide memristive device. Journal of Physics D Applied Physics. 55(39). 394002–394002. 14 indexed citations

Gerasimova, Svetlana A., M. N. Koryazhkina, A. I. Belov, et al.. (2021). A neurohybrid memristive system for adaptive stimulation of hippocampus. Chaos Solitons & Fractals. 146. 110804–110804. 20 indexed citations

Mikhaylov, Alexey, Д. В. Гусейнов, A. I. Belov, et al.. (2021). Stochastic resonance in a metal-oxide memristive device. Chaos Solitons & Fractals. 144. 110723–110723. 118 indexed citations

Демин, В. А., A. V. Emelyanov, K. E. Nikiruy, et al.. (2021). Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network. Chaos Solitons & Fractals. 146. 110890–110890. 104 indexed citations

Agudov, N. V., A. V. Krichigin, A. A. Dubkov, et al.. (2020). Nonstationary distributions and relaxation times in a stochastic model of memristor. Journal of Statistical Mechanics Theory and Experiment. 2020(2). 24003–24003. 104 indexed citations

10.

Belov, A. I., et al.. (2020). Simulation of memristor switching time series in response to spike-like signal. Chaos Solitons & Fractals. 142. 110382–110382. 18 indexed citations

11.

Сенников, П. Г., et al.. (2020). Behavior of Lithium Donors in Bulk Single-Crystal Isotopically Pure 28Si1 –x72Gex Alloys. Semiconductors. 54(10). 1336–1340.

12.

Гусейнов, Д. В., et al.. (2019). Flexible Monte-Carlo approach to simulate electroforming and resistive switching in filamentary metal-oxide memristive devices. Modelling and Simulation in Materials Science and Engineering. 28(1). 15007–15007. 6 indexed citations

13.

Fukina, Diana G., Е. В. Сулейманов, Georgy K. Fukin, et al.. (2019). Crystal structure and thermal behavior of pyrochlores CsTeMoO6 and RbTe1.25Mo0.75O6. Journal of Solid State Chemistry. 272. 47–54. 13 indexed citations

14.

Королев, Д. С., A. I. Belov, Д. В. Гусейнов, et al.. (2018). Manipulation of resistive state of silicon oxide memristor by means of current limitation during electroforming. Superlattices and Microstructures. 122. 371–376. 12 indexed citations

15.

Королев, Д. С., Alexey Mikhaylov, A. I. Belov, et al.. (2016). Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride. Semiconductors. 50(2). 271–275. 5 indexed citations

16.

Гусейнов, Д. В., et al.. (2015). Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique. Semiconductors. 49(10). 1365–1368. 7 indexed citations

17.

Матвеев, С. А., et al.. (2014). Low temperature growth of the epitaxial Ge layers on Si(100) by Hot Wire Chemical Vapor Deposition. Journal of Physics Conference Series. 541. 12026–12026. 3 indexed citations

18.

Гусейнов, Д. В., et al.. (2013). Temperature and donor concentration dependence of the conduction electron Lande g-factor in silicon. AIP conference proceedings. 321–322. 2 indexed citations

19.

Гусейнов, Д. В., et al.. (2013). Monoisotopic silicon 28Si in spin resonance spectroscopy of electrons localized at donors. Semiconductors. 47(2). 203–208. 3 indexed citations

20.

Гусейнов, Д. В., et al.. (2012). Investigation of the structure of the ground state of lithium donor centers in silicon enriched in 28Si isotope and the influence of internal strain in the crystal on this structure. Semiconductors. 46(11). 1437–1442. 3 indexed citations

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