T. Nirschl

2.0k total citations
22 papers, 1.1k citations indexed

About

T. Nirschl is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Hardware and Architecture. According to data from OpenAlex, T. Nirschl has authored 22 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 6 papers in Biomedical Engineering and 2 papers in Hardware and Architecture. Recurrent topics in T. Nirschl's work include Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor materials and devices (14 papers) and Low-power high-performance VLSI design (10 papers). T. Nirschl is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (17 papers), Semiconductor materials and devices (14 papers) and Low-power high-performance VLSI design (10 papers). T. Nirschl collaborates with scholars based in Germany, United States and Austria. T. Nirschl's co-authors include D. Schmitt‐Landsiedel, Bernhard Wicht, W. Hänsch, Mirjam Weis, Elisabeth Oswald, M. Fulde, Georg Georgakos, Pengfei Wang, Stephan Henzler and C. Pacha and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

T. Nirschl

22 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Nirschl Germany 12 1.1k 451 83 63 34 22 1.1k
Ching-Te Chuang Taiwan 20 1.2k 1.1× 173 0.4× 188 2.3× 51 0.8× 39 1.1× 101 1.3k
Dmitry Yakimets Belgium 21 1.1k 1.0× 304 0.7× 46 0.6× 122 1.9× 18 0.5× 34 1.2k
C. Kuo United States 7 1.3k 1.2× 224 0.5× 27 0.3× 121 1.9× 16 0.5× 13 1.4k
Sunghyun Park South Korea 8 395 0.4× 102 0.2× 65 0.8× 46 0.7× 25 0.7× 15 444
Chi-Shuen Lee United States 8 499 0.4× 111 0.2× 40 0.5× 228 3.6× 22 0.6× 12 578
A. Bryant United States 6 511 0.5× 122 0.3× 46 0.6× 77 1.2× 18 0.5× 8 562
Sebastiano Strangio Italy 17 767 0.7× 169 0.4× 16 0.2× 65 1.0× 12 0.4× 44 807
Gary D. Carpenter United States 12 608 0.5× 172 0.4× 253 3.0× 280 4.4× 68 2.0× 20 801
Young-Kwan Park South Korea 14 495 0.4× 92 0.2× 64 0.8× 70 1.1× 77 2.3× 55 552
S. Lipa United States 9 367 0.3× 81 0.2× 72 0.9× 122 1.9× 54 1.6× 29 497

Countries citing papers authored by T. Nirschl

Since Specialization
Citations

This map shows the geographic impact of T. Nirschl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Nirschl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Nirschl more than expected).

Fields of papers citing papers by T. Nirschl

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Nirschl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Nirschl. The network helps show where T. Nirschl may publish in the future.

Co-authorship network of co-authors of T. Nirschl

This figure shows the co-authorship network connecting the top 25 collaborators of T. Nirschl. A scholar is included among the top collaborators of T. Nirschl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Nirschl. T. Nirschl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fulde, M., Mirjam Weis, K. von Arnim, et al.. (2008). Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs. 579–584. 20 indexed citations
2.
Nirschl, T., Mirjam Weis, M. Fulde, & D. Schmitt‐Landsiedel. (2007). Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies". IEEE Electron Device Letters. 28(4). 315–315. 35 indexed citations
3.
Fischer, Thomas M., et al.. (2006). Modelling of the parametric yield in decananometer SRAM-Arrays. Advances in radio science. 4. 281–285. 2 indexed citations
4.
Happ, Thomas D., Eric Joseph, S. Z. A. Zaidi, et al.. (2006). Novel One-Mask Self-Heating Pillar Phase Change Memory. 120–121. 44 indexed citations
5.
Fischer, J., et al.. (2006). Impact of process parameter variations on the energy dissipation in adiabatic logic. 3. 429–432. 1 indexed citations
6.
Pacha, C., K. von Arnim, T. Schulz, et al.. (2006). Circuit design issues in multi-gate FET CMOS technologies. 1656–1665. 23 indexed citations
7.
Henzler, Stephan, Georg Georgakos, T. Nirschl, et al.. (2006). Dynamic State-Retention Flip-Flop for Fine-Grained Power Gating With Small Design and Power Overhead. IEEE Journal of Solid-State Circuits. 41(7). 1654–1661. 17 indexed citations
8.
Nirschl, T., J. Sedlmeir, Robert Heinrich, et al.. (2005). The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes. 195–198. 52 indexed citations
9.
Nirschl, T., Bernhard Fabel, Krishna K. Bhuwalka, et al.. (2005). Characteristics and optimisation of vertical and planar tunnelling-FETs. Journal of Physics Conference Series. 10. 15–18. 3 indexed citations
10.
Nirschl, T., J. Fischer, Stephan Henzler, et al.. (2005). The 1T photo pixel cell using the tunneling field effect transistor (TFET). 11. 66–67. 5 indexed citations
11.
Henzler, Stephan, T. Nirschl, J. Berthold, Georg Georgakos, & D. Schmitt‐Landsiedel. (2005). Design and technology of fine-grained sleep transistor circuits in ultra-deep sub-micron CMOS technologies. 223–228. 4 indexed citations
12.
Nirschl, T., et al.. (2005). Impact of mask alignment on the tunneling field effect transistor (TFET). 43–46. 2 indexed citations
13.
Henzler, Stephan, T. Nirschl, J. Berthold, et al.. (2005). Sleep transistor circuits for fine-grained power switch-off with short power-down times. 302–600 Vol. 1. 29 indexed citations
14.
Henzler, Stephan, T. Nirschl, C. Pacha, et al.. (2005). Dynamic state-retention flipflop for fine-grained sleep-transistor scheme. 145–148. 4 indexed citations
15.
Nirschl, T., Pengfei Wang, W. Hänsch, & D. Schmitt‐Landsiedel. (2004). The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application. III–713. 31 indexed citations
16.
Nirschl, T., et al.. (2004). Complementary tunneling transistor for low power application. Solid-State Electronics. 48(12). 2281–2286. 393 indexed citations
17.
Wicht, Bernhard, T. Nirschl, & D. Schmitt‐Landsiedel. (2004). Yield and speed optimization of a latch-type voltage sense amplifier. IEEE Journal of Solid-State Circuits. 39(7). 1148–1158. 363 indexed citations
18.
Wicht, Bernhard, T. Nirschl, & D. Schmitt‐Landsiedel. (2004). A yield-optimized latch-type SRAM sense amplifier. 409–412. 14 indexed citations
19.
Nirschl, T., et al.. (2003). MALTY––A memory test structure for analysis in the early phase of the technology development. Microelectronics Reliability. 43(9-11). 1383–1387. 1 indexed citations
20.
Nirschl, T., et al.. (2000). Yield and reliability analysis of digital standard cells with resistive defects. Microelectronics Reliability. 40(8-10). 1635–1640. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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