J. Berthold

610 total citations
32 papers, 443 citations indexed

About

J. Berthold is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Hardware and Architecture. According to data from OpenAlex, J. Berthold has authored 32 papers receiving a total of 443 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 7 papers in Biomedical Engineering and 3 papers in Hardware and Architecture. Recurrent topics in J. Berthold's work include Advancements in Semiconductor Devices and Circuit Design (21 papers), Low-power high-performance VLSI design (17 papers) and Semiconductor materials and devices (17 papers). J. Berthold is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (21 papers), Low-power high-performance VLSI design (17 papers) and Semiconductor materials and devices (17 papers). J. Berthold collaborates with scholars based in Germany, United States and France. J. Berthold's co-authors include D. Schmitt‐Landsiedel, R. Mahnkopf, C. Pacha, K. von Arnim, R. Thewes, Georg Georgakos, Stephan Henzler, Ralf Brederlow, Christian Schlünder and T. Schulz and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, Applied Surface Science and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

J. Berthold

31 papers receiving 427 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Berthold Germany 12 430 116 88 13 11 32 443
Kazumasa Yanagisawa Japan 13 689 1.6× 167 1.4× 121 1.4× 43 3.3× 8 0.7× 33 715
M. Sorna United States 10 375 0.9× 54 0.5× 72 0.8× 19 1.5× 4 0.4× 20 385
C.H. Kim United States 13 732 1.7× 189 1.6× 80 0.9× 48 3.7× 11 1.0× 16 755
T. Sakata Japan 9 272 0.6× 44 0.4× 48 0.5× 20 1.5× 6 0.5× 28 293
Ching-Te Chuang Taiwan 9 510 1.2× 112 1.0× 43 0.5× 13 1.0× 14 1.3× 35 525
Runqi Gu United States 6 289 0.7× 88 0.8× 66 0.8× 12 0.9× 17 1.5× 12 300
S. Bobba United States 10 373 0.9× 150 1.3× 46 0.5× 23 1.8× 11 1.0× 19 389
Tomoaki Yabe Japan 11 320 0.7× 79 0.7× 44 0.5× 18 1.4× 6 0.5× 23 330
Louis P. Alarcón Philippines 6 356 0.8× 110 0.9× 113 1.3× 39 3.0× 22 2.0× 39 380
Liang-Teck Pang United States 10 431 1.0× 165 1.4× 50 0.6× 18 1.4× 8 0.7× 16 445

Countries citing papers authored by J. Berthold

Since Specialization
Citations

This map shows the geographic impact of J. Berthold's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Berthold with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Berthold more than expected).

Fields of papers citing papers by J. Berthold

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Berthold. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Berthold. The network helps show where J. Berthold may publish in the future.

Co-authorship network of co-authors of J. Berthold

This figure shows the co-authorship network connecting the top 25 collaborators of J. Berthold. A scholar is included among the top collaborators of J. Berthold based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Berthold. J. Berthold is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Berthold, J., et al.. (2025). A Fully Integrated SiGe BiCMOS D-Band Transceiver With Homogeneous Plano-Convex Lens Achieving 50 Gb/s at 20 m. IEEE Transactions on Microwave Theory and Techniques. 73(11). 8857–8867.
2.
Schlünder, Christian, et al.. (2017). On the influence of BTI and HCI on parameter variability. 2E–4.1. 11 indexed citations
3.
Schlünder, Christian, et al.. (2015). Influence of MOSFET geometry on the statistical distribution of NBTI induced parameter degradation. 21. 81–86. 5 indexed citations
4.
Marschmeyer, S., J. Berthold, Andreas Krüger, et al.. (2014). Modular integration of annular TSV structures filled with tungsten in a 0.25μm SiGe:C BiCMOS technology. Microelectronic Engineering. 137. 153–157. 9 indexed citations
5.
Ramacher, Ulrich, et al.. (2011). Architecture and implementation of a Software-Defined Radio baseband processor. 6 indexed citations
6.
Schlünder, Christian, et al.. (2011). A new smart device array structure for statistical investigations of BTI degradation and recovery. 2B.6.1–2B.6.5. 18 indexed citations
7.
Berthold, J., et al.. (2010). Low power design of the X-GOLD® SDR 20 baseband processor. Design, Automation, and Test in Europe. 792–793. 1 indexed citations
8.
Raab, W., et al.. (2010). Low power design of the X-GOLD<sup>&#x00AE;</sup> SDR 20 baseband processor. 792–793. 1 indexed citations
9.
Pacha, C., K. von Arnim, Florian Bauer, et al.. (2007). Efficiency of low-power design techniques in multi-gate FET CMOS circuits. 111–114. 7 indexed citations
10.
Henzler, Stephan, et al.. (2007). Power supply network design: a case study driven approach. Advances in radio science. 5. 279–284. 3 indexed citations
11.
12.
Henzler, Stephan, et al.. (2006). Timing violations due to &lt;i&gt;V&lt;sub&gt;DD&lt;/sub&gt;/V&lt;sub&gt;SS&lt;/sub&gt;&lt;/i&gt; bounce. Advances in radio science. 4. 197–205. 1 indexed citations
13.
Pacha, C., K. von Arnim, T. Schulz, et al.. (2006). Circuit design issues in multi-gate FET CMOS technologies. 1656–1665. 23 indexed citations
14.
Henzler, Stephan, T. Nirschl, J. Berthold, Georg Georgakos, & D. Schmitt‐Landsiedel. (2005). Design and technology of fine-grained sleep transistor circuits in ultra-deep sub-micron CMOS technologies. 223–228. 4 indexed citations
15.
Fischer, J., et al.. (2004). An ultra low-power adiabatic adder embedded in a standard 0.13μm CMOS environment. 38. 599–602. 11 indexed citations
16.
17.
Pindl, Stephan, et al.. (1999). A 130-nm channel length partially depleted SOI CMOS-technology. IEEE Transactions on Electron Devices. 46(7). 1562–1566. 3 indexed citations
18.
Pindl, Stephan, et al.. (1998). A Partially Depleted SOI CMOS-technology with advanced processing for 130 nm channel length. European Solid-State Device Research Conference. 268–271. 1 indexed citations
19.
Berthold, J., et al.. (1997). The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 5(4). 360–368. 128 indexed citations
20.
Berthold, J., et al.. (1989). CVD-W deposition and dry etch processes for planarized metallizations and tungsten interconnect techniques. Applied Surface Science. 38(1-4). 506–516. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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